8T06AI-B

8T06A-BW NELLSEMI | Alldatasheet

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www.nellsemi.com Page 1 of 7 SEMICONDUCTOR 8T Series RoHS RoHS

DESCRIPTION

T he 8T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the 8T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref. :E320098) GA2 TRIACs, 8A Snubberless, and Standard Logic Level 1 2 3 1 2 3 TO-220AB (lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) (8TxxF) (8TxxG) (8TxxAI) TO-220AB (non-Insulated) (8TxxA) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 8 A V mA5 to 50 600 to 1000 SYMBOL IT(RMS)RMS on-state current (full sine wave) 8 TO-251/TO-252/TO-263/TO-220AB ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 32 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated T = 110ºCc T = 100ºCc G 2TO-263 (D PAK) (8TxxH)

www.nellsemi.com Page 2 of 7 C I - II - III IV MAX. 100 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. MIN. V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM MAX. mA Note 1: minimum l is guaranted at 5% of l max.GT GT Note 2: for both polarities of A2 referenced to A1. QUADRANT 8Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 200 mAT I = 1.2 IG GT V = 67% V , gate open, T = 125°CD DRM j (dI/dt)c = 3.5 A/ms, T = 125°Cj 1.3 0.2 V V mA V/µs V/µs 60 80 200 400 5 10 I = 11 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL 8Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms- IL MAX. MIN. V = 12 V, R = 30ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 100 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 3.5 1.5 10 50 1.3 0.2 15 60 20 70 35 80 40 1000 5.4 2.8 mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL TW SW BW 400 4.5 CW SNUBBERLESS and Logic level (3 quadrants) Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c (2)Rd SEMICONDUCTOR 8T Series RoHS RoHS B (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS V = VD DRM V = VR RRM

www.nellsemi.com Page 3 of 7 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA 1000 V 8TxxA-B/ 8TxxAl-B 8TxxA-BW/8TxxAl-BW 8TxxA-C/8TxxAl-C 8TxxA-CW/8TxxAl-CW 8TxxA-SW/8TxxAl-SW 8TxxA-TW/8TxxAI-TW TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Snubberless Logic level Logic level V V V V V VV VV VV V SEMICONDUCTOR 8T Series RoHS RoHS 800 V V V V V V V THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.5 °C/W °C/W UNITVALUESYMBOL TO-220AB, TO-251, TO-252, TO-263 TO-220AB Insulated TO-252 TO-220AB Insulated, TO-220AB 1.6 S = Copper surface under tab. 2S = 1 cm 2S = 0.5 cm TO-263 TO-251 100 10 mA 10 mA 10 mA 35 mA 35 mA 8TxxG -SW IPAK Snubberless Logic level Logic level V V V V V VV VV VV V V V V V V V 8TxxF -SW 8TxxG -CW 8TxxH -SW 8TxxH -CW 8TxxF -CW AI: non insulated TO-220AB package 35 mA Snubberless Snubberless Logic level 2D PAK DPAK 2D PAK IPAK DPAK

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 8TxxAI-yy 8TxxAI-yy 2.3g 50 Tube 8TxxF-yy 8TxxF-yy TO-251(I-PAK) 0.40g 80 8TxxG-yy 8TxxG-yy 0.38g 80 Tube Note: xx = voltage, yy = sensitivity 8TxxH-yy 8TxxH-yy 2D PAK 2.0g 50 TO-252(D-PAK) TO-220AB (insulated) Tube Tube

SEMICONDUCTOR 8T Series RoHS RoHS www.nellsemi.com Page 4 of 7 ORDERING INFORMATION SCHEME Triac series Current Voltage 8 = 8A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level TW = 5mA Logic Level

8 T 06 A - BW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) I Sensitivity GT Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) 2H = TO-263 (D PAK) P (W) I (A)T(RMS) 12510075502587654321 I (A)T(RMS) T (°C)C TO-220AB TO-251 TO-252 TO-263 TO-220AB ( )insulated Fig.2-2 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) Fig.3 Relative variation of thermal impedance versus pulse duration. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tamb(°C) 1E-3 1E-3 1E-2 1E-1 1E+0 K=[Zth/Rth] Zth(j-c) 2TO-220AB/D PAK Zth(j-a) DPAK/IPAK Zth(j-a) tp(s) 5E+2 1E+21E+11E+01E-11E-2

2 D PAK

2(S=1cm ) DPAK 2(S=0.5cm ) 0 25 50 75 100 125 I (A)T(RMS)

www.nellsemi.com Page 5 of 7 SEMICONDUCTOR 8T Series RoHS RoHS 100 ITM (A) T =25°Cj T =T maxj jT max.j Vto = 0.85 V Rd = 50 mΩ VTM(V) ITSM (A) Non repetitive T initial=25°Cj Repetitive T =100°Cc One cycle t=20ms Number of cycles Fig.4 On-state characteristics (maximum values). Fig.5 Surge peak on-state current versus number of cycles. 0.01 0.10 1.00 10.00 100 1000 tp (ms) T initial=25°Cj dI/dt limitation: 50A/µs -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT IH & IL T (°C)j Fig.8-1 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig.8-2 Relative variation of critical rate of of main current versus (dV/dt)c Standard Types decrease (typical values). Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t. Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2lTSM (A), l t(A s) lGT,lH,lL[T ] / lGT,lH,lL [T =25°C]j j 2I t ITSM 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c CW/BW TW SW (dV/dt)c (V/µs) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c C B (dV/dt)c (V/µs)

www.nellsemi.com Page 6 of 7 SEMICONDUCTOR 8T Series RoHS RoHS Fig.9 Relative variation of critical rate of decrease of main current versus junction temperature. 2Fig.10 DPAK and D PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board Fr4, copper thickness: 35 µm.) (dI/dt)c [T ] / (dI/dt)c [T specified]j j T (°C)j 100 Rth(j-a) (°C/W) DPAK 2D PAK 2S(cm ) Case Style 4 8 12 16 20 24 28 32 36 4000 25 50 75 100 125 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021)

SEMICONDUCTOR 8T Series RoHS RoHS www.nellsemi.com Page 7 of 7 RoHS 6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) 1 2 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-251 (I-PAK) TO-252 (D-PAK) Case Style