8NM60

8NM60 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 8NM60 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2021 Unisonic Technologies Co., Ltd QW-R205-088.E 8.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characte ristics. This power MOSFET is usually used at high speed swit ching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness SYMBOL  ORDERING INFORMATION Order Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 8NM60L-TA3-T 8NM60G-TA3-T TO-220 G D S Tube 8NM60L-TF1-T 8NM60G-TF1-T TO-220F1 G D S Tube 8NM60L-TF2-T 8NM60G-TF2-T TO-220F2 G D S Tube 8NM60L-TF3-T 8NM60G-TF3-T TO-220F G D S Tube 8NM60L-TM3-T 8NM60G-TM3-T TO-251 G D S Tube 8NM60L-TN3-R 8NM60G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E  MARKING

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous I D 8.0 A Pulsed (Note 2) I DM 32 A Avalanche Current (Note 2) I AR 1.9 A Avalanche Energy Single Pulsed (Note 3) E AS 233 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.2 V/ns Power Dissipation TO-220 PD 75 W TO-220F/TO-220F1 TO-220F2 27 W TO-251/TO-252 56 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=144mH, IAS=1.8A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤8.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F TO-220F1/TO-220F2 θJA 62.5 ° С/W TO-251/TO-252 110 ° С/W Junction to Case TO-220 θJC 1.66 ° С/W TO-220F/TO-220F1 TO-220F2 4.6 ° С/W TO-251/TO-252 2.23 (Note) ° С/W Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = 250μA 600 V Drain-Source Leakage Current I DSS V DS = 600V, VGS = 0V 10 μA Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse V GS = -30V, VDS = 0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.5 4.5 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 4.0A 0.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0 MHz 462 pF Output Capacitance C OSS 351 pF Reverse Transfer Capacitance C RSS 33 pF SWITCHING PARAMETERS Total Gate Charge (Note 1) Q G VDS=480V, VGS=10V, ID=8.0A, IG=1mA (Note 1, 2) 22 nC Gate to Source Charge Q GS 6 nC Gate to Drain Charge Q GD 7 nC Turn-on Delay Time (Note 1) t D(ON) VDD=100V, VGS=10V, ID=8.0A, RG =25Ω (Note 1, 2) 13 ns Rise Time t R 21 ns Turn-off Delay Time t D(OFF) 61 ns Fall-Time t F 33 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Pulsed Current I S 8 A Drain-Source Diode Forward Voltage (Note 1) I SM 32 A Maximum Body-Diode Continuous Current V SD I S=8.0A, VGS=0V 1.4 V Reverse Recovery Time (Note 1) t rr IS=8.0A, VGS=0V dIF/dt=100A/µs 285 ns Reverse Recovery Charge Q rr 6.6 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E  TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E  TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL Pulse Width≤ 1μs Duty Factor≤0.1% VDD Switching Test Circuit Switching Waveforms 50kΩ 0.3µF DUT Same Type as D.U.T.0.2µF12V VGS 3mA VDS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RG 10V VDS L tp VD VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw Q W - R 2 0 5 - 0 8 8 . E UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.