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UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-470.b

8 Amps, 900 Volts

„ DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N90 is generally applied in high efficiency switch mode power supplies. „ FEATURES * 8A, 900V, RDS(ON)=1.55Ω @ VGS=10V * Fast Switching Speed * 100% Avalanche Tested * Improved dv/dt Capability „ SYMBOL 1.Gate 3.Source 2.Drain „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 8N90L-TA3-T 8N90G-TA3-T TO-220 G D S Tube Note: G: GND, D: Drain, S: Source

8N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 7 0 . b „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 900 V Gate to Source Voltage V GSS ±30 V Continuous Drain Current (TC=25°C) I D 8 A Pulsed Drain Current (Note 1) I DM 25 A Avalanche Current (Note 1) I AR 6.3 A Single Pulsed Avalanche Energy (Note 2) E AS 850 mJ Repetitive Avalanche Energy (Note 1) E AR 17.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Total Power Dissipation (TC=25°C) 147 W Linear Derating Factor above TC=25°C PD 1.17 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=40mH, I AS=6.3A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. I SD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.85 °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 900 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 0.95 V/°C VDS=900V, VGS=0V 10 µADrain-Source Leakage Current I DSS VDS=720V, TC=125°C 100 µA Gate-Source Leakage Current I GSS V DS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=4A 940 1550 m Ω Forward Transconductance (Note 1) g FS V DS=50V, ID=4A4 5.5 S DYNAMIC PARAMETERS Input Capacitance C ISS 1600 2080 pF Output Capacitance C OSS 130 170 pF Reverse Transfer Capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 12 15 pF SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge Q G 35 45 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD VDS=720V, VGS=10V, ID=8A 14 nC Turn-ON Delay Time t D(ON) 40 90 ns Turn-ON Rise Time t R 110 230 ns Turn-OFF Delay Time t D(OFF) 70 150 ns Turn-OFF Fall Time t F VDD=450V, ID=8A, RG=25Ω 70 150 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 8 A Maximum Body-Diode Pulsed Current ISM 25 A Drain-Source Diode Forward Voltage V SD I S =8A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t RR 530 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, I S=8A, dI F/dt=100A/μs (Note 1) 5.8 μC Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

8N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 7 0 . b „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

8N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 7 0 . b „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

8N90 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 7 0 . b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.