8N80G-TA3-T

8N80 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 8N80 Preliminary Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-471.a 800V N-CHANNEL MOSFET „ DESCRIPTION The UTC 8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N80 is generally applied in high efficiency switch mode power supplies. „ FEATURES * Typically 35 nC Low Gate Charge * 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V * Typically 13 pF Low Crss * Improved dv/dt Capability * Fast Switching Speed * 100% Avalanche Tested * RoHS–Compliant Product „ SYMBOL G D S TO-220 TO-220F1 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 8N80L-TA3-T 8N80G-TA3-T TO-220 G D S Tube 8N80L-TF1-T 8N80G-TF1-T TO-220F1 G D S Tube Note: G: GND, D: Drain, S: Source

8N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R502-471.a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Drain Current (Continuous) (TC=25°C) I D 8 A Drain Current (Pulsed) (Note 1) I DM 32 A Avalanche Current (Note 1) I AR 8 A Single Pulse Avalanche Energy (Note 2) E AS 850 mJ Repetitive Avalanche Energy (Note 1) E AR 17.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation (TC=25°C) 178 W Linear Derating Factor above TC=25°C PD 1.43 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 25mH, I AS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. I SD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.7 °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 800 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA 0.5 V/°C VDS=800V, VGS=0V 10Drain-Source Leakage Current I DSS VDS=640V, TC=125°C 100 µA Gate- Source Leakage Current I GSS V GS=±30V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=4A 0.94 1.55 Ω Forward Transconductance (Note 1) g FS V DS=50V, ID=4A 5.6 S DYNAMIC PARAMETERS Input Capacitance C ISS 1580 2050 pF Output Capacitance C OSS 135 175 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 13 17 pF SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge Q G 35 45 nC Gate to Source Charge Q GS 10 nC Gate to Drain Charge Q GD VGS=10V, VDS=640V, ID=8A 14 nC Turn-ON Delay Time t D(ON) 40 90 ns Rise Time t R 110 230 ns Turn-OFF Delay Time t D(OFF) 65 140 ns Fall-Time t F VDD=400V, ID=8A, RG=25Ω 70 150 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 8 A Maximum Pulsed Drain-Source Diode Forward Current ISM 32 A Drain-Source Diode Forward Voltage VSD I S=8A, VGS=0V 1.4 V Reverse Recovery Time (Note 1) t RR 690 ns Reverse Recovery Charge (Note 1) Q RR IS=8A, VGS=0V, dIF/dt=100A/µs 8.2 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

8N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R502-471.a „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

8N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw QW-R502-471.a „ TEST CIRCUITS AND WAVEFORMS 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

8N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R502-471.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.