8N70

8N70 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-711.D 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior swit ching performance and withstand high energy pulse in the avalanche and commutation mode. „ FEATURES * RDS(ON)= 1.4Ω @ VGS=10V, ID=4A * High switching speed * Low Gate Charge(typical 32nC) * Low C RSS (typical 13.7pF) „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 8N70L-TA3-T 8N70G-TA3-T TO-220 G D S Tube 8N70L-TF3-T 8N70G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-711.D „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 700 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous TC=25°C ID 8 A TC=100°C 4.8 A Pulsed (Note 4) I DM 32 A Avalanche Current Repetitive (Note 2) I AR 8 A Repetitive (Note 3) I AS 8 A Avalanche Energy Single Pulsed (Note 3) E AS 266 mJ Repetitive (Note 2) E AR 11.6 mJ Power Dissipation (TC=25°C) TO-220 PD 147 W TO-220F 40 Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature 3. L = 7.74mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Limited by maximum junction temperature „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.85 °C/W TO-220F 3.1 Note: 3urface mounted on FR4 board t≤10sec „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 700 V Drain-Source Leakage Current I DSS V DS=700V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +10 nA Reverse V GS=-30V, VDS=0V -10 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=4A 1.2 1.4 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 2006 pF Output Capacitance C OSS 148 pF Reverse Transfer Capacitance C RSS 13.7 pF

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-711.D „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=560V, ID=8A (Note 1, 2) 32 nC Gate to Source Charge Q GS 9 nC Gate to Drain Charge Q GD 8 nC Turn-ON Delay Time t D(ON) VDD=300V, ID=10A, RG=25Ω, VGS=10V (Note 1, 2) 23 ns Rise Time t R 69 ns Turn-OFF Delay Time t D(OFF) 144 ns Fall-Time t F 77 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S Integral reverse diode in the MOSFET 8 A Maximum Body-Diode Pulsed Current I SM 32 A Drain-Source Diode Forward Voltage V SD I S=8A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr IS=8A, VGS=0V, dIF/dt=100A/µs 420 ns Body Diode Reverse Recovery Charge Q RR 4.2 µC Notes: 1. Essentially independe nt of operating temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-711.D „ TEST CIRCUITS AND WAVEFORMS VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-711.D „ TEST CIRCUITS AND WAVEFORMS(Cont.) Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-711.D „ TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 0 1.5 3 4.5 6 7.5 0 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Drain Current, ID (A) ID=4A, VGS=10V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.