8N65T

8N65 SUNMATE | Alldatasheet

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Technical content

Features

T A = 25/c176C unless otherwise specified

ELECTRICAL CHARACTERISTICS

C =25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θ JA 62.5 °C/W Junction to Case TO-220/TO-262/TO-263 θ JC 0.85 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS GS V =0V, I D =250μA 650 V Drain-Source Leakage Current I DSS VDS=650V, VGS=0V 10 μA Gate- Source Leakage Current Forward I GSS V 30V, V DS =0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D =250μA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) DS V =V GS , I D =250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 1.2 1.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS V DS =25V, V GS =0V, f=1.0 MHz 1145 1255 pF Output Capacitance C OSS pF 118 135 Reverse Transfer Capacitance C RSS 19 25 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 84 100 ns Turn-On Rise Time t R ns 100 130 Turn-Off Delay Time t D(OFF) 275 320 ns Turn-Off Fall Time t F 64.5 140 ns Total Gate Charge Q G 115 130 nC Gate-Source Charge Q GS nC Gate-Drain Charge Q GD nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD 1.4 V Maximum Continuous Drain-Source Diode Forward Current I S A Maximum Pulsed Drain-Source Diode Forward Current I SM A Reverse Recovery Time t rr VGS=0V, IS=8A, dIF/dt =100 A/μs (Note 1) 365 ns Reverse Recovery Charge Q RR μC 3.4 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. VDD =520V, ID =8A, RG =25Ω (Note 1, 2) VDS=480V, ID=8A, VGS=10V (Note 1, 2) GS V = 10V, I D = 4A GS V = 0V, I S = 8A

TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L V DD Driver V GS R G V DS D.U.T. + * dv/dt controlled by R G SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. Period D=V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform V DD BV DSS I AS I D(t) V DS(t) Unclamped Inductive Switching Test Circuit t p Time Unclamped Inductive Switching Waveforms

100.1 1 Drain-to-Source Voltage, V DS (V) Drain Current, I D (A) On-State Characteristics 0.1 Gate-Source Voltage, V GS (V) Drain Current, I D (A) Transfer Characteristics 64 8 1 0 0.1 5.0V Notes: 1. 250µs Pulse Test 2. T C =25°C V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. V DS =40V 2. 250µs Pulse Test 150 Drain-Source On-Resistance, R DS(ON) (ohm) Drain Current, I D (A) On-Resistance Variation vs. Drain 10 15 20 0.1 0.2 Source-Drain Voltage, V SD (V) Reverse Drain Current, I DR (A) Body Diode Forward Voltage vs. Source Current 1.8 1.4 150 Notes: 1. V GS =0V 2. 250µs Test V GS =20V V GS =10V Current and Gate Voltage T J =25°C 1900 0.1 Drain-SourceVoltage, V DS (V) Capacitance (pF) 1700 500 11 0 1500 1300 Capacitance Characteristics (Non-Repetitive) Gate-Source Voltage, V GS (V) Total Gate Charge, Q G (nC) 5 15 25 V DS =120V V DS =520V V DS =300V 700 C iss C oss C rss C iss= C gs gd ds =shorted) C oss ds gd C rss gd Notes: 1. V GS =0V 2. f = 1MHz 1100 900 300 100 Gate Charge Characteristics I D =7.5A

-100 Drain-Source Breakdown Voltage, BV DSS (Normalized) Junction Temperature, T J -50 50 200 100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. V GS =0V 2. I D =250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, R DS(ON) (Normalized) Junction Temperature, T J -50 50 200 100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. V GS =10V 2. I D =4A 0.1 Drain-Source Voltage, V DS (V) Drain Current, I D (A) 100 101 100µs 1000 10ms DC Maximum Safe Operating Area Drain Current, I D (A) Case Temperature, T C 100 12550 25 Maximum Drain Current vs. Case Temperature Notes: 1. T J =25°C 2. T J =150°C 3. Single Pulse 150 Operation in This Area is Limited by R DS(on) 100 1ms 10µs Thermal Response, θ JC (t) 0.1 0.01 Square Wave Pulse Duration, t (sec) Transient Thermal Response Curve Notes: 1. θ JC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. T JM C DM JC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse

ITO-220 Mechanical Drawing