8N65L-TF1-T

8N65 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 8N65 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-591.C 8A, 650V N-CHANNEL P O W E R M O S F E T „ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) = 1.4Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( C RSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 8N65L-TA3-T 8N65G-TA3-T TO-220 G D S Tube 8N65L-TF1-T 8N65G-TF1-T TO-220F1 G D S Tube 8N65L-TF3-T 8N65G-TF3-T TO-220F G D S Tube 8N65L-T2Q-T 8N65G-T2Q-T TO-262 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-591.C „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 8 A Drain Current Continuous I D 8 A Pulsed (Note 2) I DM 32 A Avalanche Energy Single Pulsed (Note 3) E AS 230 mJ Repetitive (Note 2) E AR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220/TO-262 PD 147 W TO-220F/TO-220F1 48 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by T J 3. L = 7.1mH, I AS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. I SD ≤8A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-262 θJC 0.85 °C/W TO-220F/TO-220F1 2.6 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-591.C „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 650 V Drain-Source Leakage Current I DSS V DS = 650 V, VGS = 0 V 10 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse V GS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID =250μA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 4A 1.0 1.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS = 25 V, VGS = 0V, f = 1MHz 965 1255 pF Output Capacitance C OSS 105 135 pF Reverse Transfer Capacitance C RSS 12 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 325V, ID =8A, RG = 25Ω (Note 1, 2) 16.5 45 ns Turn-On Rise Time t R 60.5 130 ns Turn-Off Delay Time t D(OFF) 81 170 ns Turn-Off Fall Time t F 64.5 140 ns Total Gate Charge Q G VDS= 520V,ID=8A, VGS= 10 V (Note 1, 2) 28 36 nC Gate-Source Charge Q GS 4.5 nC Gate-Drain Charge Q GD 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS =8A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 8 A Maximum Pulsed Drain-Source Diode Forward Current ISM 32 A Reverse Recovery Time t RR VGS = 0 V, IS =8A, dIF/dt = 100 A/µs (Note 2) 365 ns Reverse Recovery Charge Q RR 3.4 µC Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-591.C „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-591.C „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-591.C „ TYPICAL CHARACTERISTICS 100.1 1 Drain-to-Source Voltage, VDS (V) Drain Current, ID (A) On-State Characteristics 0.1 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 46 8 1 0 0.1 5.0V Notes: 1. 250µs Pulse Test 2. T C=25°C VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. VDS=40V 2. 250µs Pulse Test 25°C 150°C Drain-Source On-Resistance, RDS(ON) (ohm) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage 10 15 20 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) Body Diode Forward Voltage vs. Source Current 150°C 25°C Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V TJ=25°C 1900 0.1 Drain-SourceVoltage, VDS (V) Capacitance (pF) 1700 500 11 0 1500 1300 Capacitance Characteristics (Non-Repetitive) Gate-Source Voltage, VGS (V) Total Gate Charge, QG (nC) 5 15 25 VDS=120V VDS=520V VDS=300V Gate Charge Characteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. V GS=0V 2. f = 1MHz 1100 900 300 100 ID=7.5A

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-591.C „ TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, RDS(ON) (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 0.1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100101 100µs 1000 10msDC Maximum Safe Operating Area Drain Current, ID (A) Case Temperature, TC (°C) 75 100 1255025 Maximum Drain Current vs. Case Temperature Notes: 1. T J=25°C 2. TJ=150°C 3. Single Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 10µs Thermal Response, θJC (t) 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. θJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-591.C UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.