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UNISONIC TECHNOLOGIES CO., LTD 8N65K-MT Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A98.D 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 4 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 8N65KL-TF1-T 8N65KG-TF1-T TO-220F1 G D S Tube 8N65KL-TF2-T 8N65KG-TF2-T TO-220F2 G D S Tube 8N65KL-TF3T-T 8N65KG-TF3T-T TO-220F3 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3 (3) L: Lead Free, G: Halogen Free and Lead Free 8N65KL-TF1-T (1)Packing Type (2)Package Type (3)Green Package  MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-A98.D  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Continuous I D 8 A Drain Current Pulsed (Note 2) I DM 32 A Avalanche Energy Single Pulsed (Note 3) E AS 350 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation P D 48 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=10.93mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.6 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-A98.D  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 650 V Drain-Source Leakage Current I DSS V DS = 650 V, VGS = 0 V 10 µA Forward V GS = 30 V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 4A 0.9 1.3 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 800 1000 pF Output Capacitance C OSS 110 130 pF Reverse Transfer Capacitance C RSS VDS = 25 V, VGS = 0V, f = 1MHz 7 15 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 57 70 ns Turn-On Rise Time t R 62 90 ns Turn-Off Delay Time t D(OFF) 150 170 ns Turn-Off Fall Time t F VDD = 30V, ID =0.5A, RG = 25Ω (Note 1, 2) 70 90 ns Total Gate Charge Q G 26 45 nC Gate-Source Charge Q GS 7.5 nC Gate-Drain Charge Q GD VDS= 50V, ID=1.3A, VGS= 10 V (Note 1, 2) 6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS =8A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 8 A Maximum Pulsed Drain-Source Diode Forward Current ISM 32 A Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-A98.D  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-A98.D  TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-A98.D UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.