8N60 ZSELEC | Alldatasheet
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1.Gate 3.Source 2.Drain
ORDERING INFORMATION
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 TO-220 1 1 TO-262/I PAK2 TO-263/D PAK2
7.5 Amps, 600/650 Volts
DESCRIPTION 8N65 is a high voltag e and hi gh current power MOSFET , designed to have better c haracteristics, such as fast sw itching time, low gate charge, low on-state resistance and have a high rugged avalanche characte ristics. This pow er MOSFET is usuall y used at high speed switching applications in power supplies, PW M motor controls, high efficient DC to DC converters and bridg e circuits. FEATURES * RDS(ON) = 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = ty pical 12.0 pF ) * Fa st switching capability * Avalan che energy specified * Improved dv/d t capability, high ruggedness SYMBOL 8N60 ITO-220/TO-220F TO-263/D PAK TO-262/I PAK 8N60 Pin Assignment Ordering Number Package 1 2 3 TO-220 G D S ITO-220/TO-220F G D S G D S G D S Note: Pin Assignment: G: Gate D: Drain S: Source 8N65 Pa rt No. Package Packing -TU TO-220 TU 50pcs / Tube TU TO-262 50 pcs / Tube -TU TO-2 63 50 pcs / Tube TR TO-263 800pcs / 13" Reel ITO-220/TO-220F 50pcs / Tube 8N6* 8N6* - -8N6* 8N6* -8N6* Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 147 W 48 W ABSOLUTE MAXIMUM RATING S (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RAT INGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Cu rrent (Note 2) IAR 7.5 A Continuous I D 7.5 A Drain Current Pulsed (Note 2) IDM 30.0 A Single Pulsed (Note 3) EAS 230 mJ Avalanch e Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recover y dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 147 W Power Diss ipation PD (TC = 25°С) Junction Te mperature TJ +150 ° С Ambient Operating T emperature TOPR -55 ~ + 150 °С Storage Temperature TSTG -55 ~ + 150 °С Notes: 1. Absolu te maximum ratings are those values beyond which the device could be permanently damaged. Absolu te maximum ratings are stress ratings only and functi onal device operation is not i mplied. 2. Repetitiv e Rati ng : Pulse width limited by TJ 3. L=7.3mH, IAS=7.5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. I SD≤7.5A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA 8N60 8N65 600 V TO-220F 0.85 PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 ITO-220/TO-220F 62.5 Junction-to-Ambient θJA ℃/W TO-220 0.85 2.60 Junction-to-Case θJc ℃/W 0.85 TO-262/I PAK2 TO-263/D PAK2 TO-262/I PAK2 TO-263/D PAK2 62.5 62.5 TO-262/I PAK2 TO-263/D PAK2 147 W ITO-220/TO-220F Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 ELECTRICAL CHARACTERISTIC S (TJ =25°С, unless otherwise specifi ed) PARAMETER SYMBOL TEST CONDITIONS MIN T YP MAX UNIT OFF CHARACTERISTICS 8N60 V Drain-Source Breakdown Voltage 8N65 BVDSS V GS = 0V, ID = 250μA 650 V Drain-Source Leakage Curren t IDSS V DS = 600V, VGS = 0V 10 μA Forward V GS = 30V, VDS = 0V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Vol tage Temperature Coefficient △BVDSS/T△ J ID = 250 μA, Referenced to 25°C 0.7 V/° С ON CHARACT ERISTICS Gate Threshold Voltage VGS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID =3.75A 1.0 1.2 Ω DYNAMIC CHA RACTERISTICS Input Capacitance CISS 965 1255 pF Output Capacitance COSS 105 135 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V,f =1MHz 12 16 pF SWITCHING CHARAC TERISTICS Turn-On Delay Ti me tD (ON) 16.5 45 ns Turn-On Rise Time tR 60.5 130 ns Turn-Off Delay Ti me tD(OFF) 81 170 ns Turn-Off Fall Time tF VDD =300V, ID =7.5A, RG=25Ω (Note 1, 2) 64.5 140 ns Total Gate Charge QG 28 36 nC Gate-Source Charge QGS 4.5 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=7.5A (Note 1, 2) 12 nC DRAIN-SOURCE DIODE CHAR ACTERISTICS Drain-Source Diode Fo rward Voltage VSD V GS = 0 V, ISD = 7.5 A 1.4 V Continuous Drain-Source Cu rrent ISD 7.5 A Pulsed Drain-Source Cu rrent ISM 30 A Reverse Recovery Time tRR 365 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 7.5A, di/dt = 100 A/μs (Note1) 3.4 μC Notes: 1. Pulse Test: Pulse w idth ≤ 300μs, Duty cycle≤2% 2. Essentially ind ependent of operating temperature 600 Alldatasheet
TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Dev ice Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Cu rrent di/dt IRM Body Diode Reverse Cu rrent Body Diode Recovery dv/dt Body Diode F orward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F ig . 1B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s 8N60 8N65 4 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 Alldatasheet
TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Sw itching Test Circuit Fig. 2B S w itching Waveforms Fi g . 3A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Uncla mped Inductive Switching Test Circuit Fig. 4B Uncl amped Inductive Switching Waveforms 8N60 8N65 5 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 TYPICAL CHARA CTERISTICS 100.1 1 Drain -to-Source Voltage, VDS (V) Drain Current, ID (A) On-State Char acteristics 0.1 Gate-Source Vol tage, VGS (V) Drain Current, ID (A) Transfer Characteristics 46 8 1 0 0.1 5.0V Notes: 1. 250µs Pu lse Test 2. TC=25°C VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. VDS=40V 2. 250µs Pulse Te st 25°C 150°C Drain- Source On-Resistance, RDS(ON) (ohm) Drain Cu rrent, ID (A) On-Resistance Variation vs. Drain Current and Gate Volta ge 10 15 20 0.1 0.2 Source-Drain Vo ltage, VSD (V) Reverse Drain Current, IDR (A) Body Diod e Forward Voltage vs. Source Current 150°C 25°C Notes: 1. VGS=0V 2. 250µs Te st VGS=20V VGS=10V TJ=25°C 1900 0.1 Drain-SourceVoltag e, VDS (V) Capacitance (pF) 1700 500 11 0 1500 1300 Capacita nce Characteristics (Non-Repetitive) Gate-Source Voltag e, VGS (V) Total Gate Charge, QG (nC) 5 15 25 VDS=120V VDS=300V VDS=480V Gate Charge Char acteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. VGS=0V 2. f = 1MHz 1100 900 300 100 ID=8A Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8N60 8N65 -100 Drain-Source Breakdown Voltage, BVDSS (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, RDS(ON) (Normalized) Junction Temperature, TJ (°C) -50 50 200100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 0.1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100101 100µs 1000 10msDC Maximum Safe Operating Area Drain Current, ID (A) Case Temperature, TC (°C) 75 100 1255025 Maximum Drain Current vs. Cas e Temperature Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 100µs Thermal Response, θJC (t) 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. θJC (t) = 0.85°C/W Max. 2. Duty Fact or, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse Alldatasheet