8N65 CHONGQING | Alldatasheet
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- 页码 - Rev. 14-1 http:// www.perfectway.cn 8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Lowgatecharge LowCiss Fastswitching 100%avalanchetested Improveddv/dtcapability TO-220AB ITO-220AB 8N65 8N65F TO-263 TO-262 8N65B 8N65H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 8N65 UNIT Drain-SourceVoltage VDSS 650 V Gate-SourceVoltage VGSS ±30 ContinuousDrainCurrent ID 8 A PulsedDrainCurrent(Note1) IDM 32 SinglePulseAvalancheEnergy(Note2) EAS 550 mJ AvalancheCurrent(Note1) IAR 8 A RepetitiveAvalancheEnergy(Note1) EAR 21 mJ ReverseDiodedV/dt(Note3) dv/dt 5.5 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in
1.1 N·m
Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 1.0 0.8 0.8 ℃/W MaximumPowerDissipation TC=25℃ PD 125 155 155 W
- 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 650 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.6 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=650V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=30V,VDS=0V － － 100 nA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-30V,VDS=0V － － -100 nA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=10V,ID=250uA 2 － 4 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=4A － 0.9 1 Ω Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － － 1500 pF OutputCapacitance Coss － － 180 pF ReverseTransferCapacitance Crss － － 15 pF Switching Characteristics Turn-OnDelayTime td(on) VDD=300V,ID=8A, RG=25Ω (Note4,5) － 13 － ns Turn-OnRiseTime tr － 10 － ns Turn-OffDelayTime td(off) － 26 － ns Turn-OffFallTime tf － 8 － ns TotalGateCharge Qg VDS=520V,ID=8A, VGS=10V,(Note4,5) － 40 － nC Gate-SourceCharge Qgs － 9 － nC Gate-DrainCharge Qgd － 20 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 8 A PulsedDiodeForwardCurrent ISM － － 32 A DiodeForwardVoltage VSD IS=8A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=8A, dIF/dt=100A/us, (Note4) － 570 － ns ReverseRecoveryCharge Qrr － 4.3 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=50V,starling,L=16mH,Rg=25Ω,IAS=8A,TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.