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UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R205-035.D 8A, 600V N-CHANNEL P O W E R M O S F E T DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characte ristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.2Ω @ VGS = 10V, ID = 4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 8N60KL-TA3-T 8N60KG-TA3-T TO-220 G D S Tube 8N60KL-TF1-T 8N60KG-TF1-T TO-220F1 G D S Tube 8N60KL-TF2-T 8N60KG-TF2-T TO-220F2 G D S Tube 8N60KL-TF3-T 8N60KG-TF3-T TO-220F G D S Tube 8N60KL-TF3T-T 8N60KG-TF3T-T TO-220F3 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 TF3: TO-220F, TF3T: TO-220F3 (3) L: Lead Free, G: Halogen Free and Lead Free 8N60KL-TF1-T (1)Packing Type (2)Package Type (3)Green Package
UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R205-035.D MARKING
UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R205-035.D ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Continuous I D 8 A Drain Current Pulsed (Note 2) I DM 32 A Avalanche Energy Single Pulsed (Note 3) E AS 365 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation TO-220F/TO-220F1 TO-220F2/TO-220F3 PD 48 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 11.4mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W TO-220 0.85 °C/W Junction to Case TO-220F/TO-220F1 TO-220F2/TO-220F3 θJC 2.6 °C/W
UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R205-035.D ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 600 V Drain-Source Leakage Current I DSS V DS = 600 V, VGS = 0V 10 µA Forward V GS = 30 V, VDS = 0V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 4.0A 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1120 1255 pF Output Capacitance C OSS 120 135 pF Reverse Transfer Capacitance C RSS VDS = 25V, VGS = 0V, f = 1MHz 13 16 pF SWITCHING CHARACTERISTICS Total Gate Charge Q G 28 36 nC Gate-Source Charge Q GS 8 nC Gate-Drain Charge Q GD VDS=50V, VGS=1.0V, ID=1.3A (Note 1, 2) 6 nC Turn-On Delay Time t D(ON) 80 90 ns Turn-On Rise Time t R 89 100 ns Turn-Off Delay Time t D(OFF) 125 160 ns Turn-Off Fall Time t F VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 64 80 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0V, IS = 8A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 8 A Maximum Pulsed Drain-Source Diode Forward Current ISM 32 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R205-035.D TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R205-035.D TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R205-035.D UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.