FDP8N50NZ FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- R DS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A
- Low Gate Charge (Typ. 14 nC)
- Low C rss (Typ. 5 pF)
- 100% Avalanche Tested
- Improve dv/dt Capability
- ESD Improved Capability
- RoHS Compliant
Applications
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on adv anced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- LCD/LED TV • Uninterruptible Power Supply
- Lighting • AC-DC Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±25 V ID Drain Current - Continuous (TC = 25oC) 8 8* A- Continuous (TC = 100oC) 4.8 4.8* IDM Drain Current - Pulsed (Note 1) 32 32* A EAS Single Pulsed Avalanche Energy (Note 2) 122 mJ IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25oC) 130 40.3 W - Derate above 25oC1 0 . 3 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit RJC Thermal Resistance, Junction to Case, Max. 0.96 3.1 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 *Drain current limited by maximum junction temperature TO-220 GDS TO-220F GDS G D S
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP8N50NZ FDP8N50NZ TO-220 Tube N/A 50 units FDPF8N50NZ FDPF8N50NZ TO-220F Tube N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage I D = 250A, VGS = 0V, TC = 25oC 500 - - V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25oC- 0 . 5 - V / oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 AVDS = 400V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current V GS = ±25V, VDS = 0V - - ±10 A VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250A3 . 0 - 5 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 4A - 0.77 0.85 gFS Forward Transconductance V DS = 20V, ID = 4A - 6.3 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 565 735 pF Coss Output Capacitance - 80 105 pF Crss Reverse Transfer Capacitance - 5 8 pF Qg(tot) Total Gate Charge at 10V VDS = 400V,ID = 8A VGS = 10V (Note 4) -1 4 1 8 n C Qgs Gate to Source Gate Charge - 4 - nC Qgd Gate to Drain “Miller” Charge - 6 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 8A RG = 25, VGS = 10V (Note 4) -1 7 4 5 n s tr Turn-On Rise Time - 34 80 ns td(off) Turn-Off Delay Time - 43 95 ns tf Turn-Off Fall Time - 27 60 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 8A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 8A dIF/dt = 100A/s - 228 - ns Qrr Reverse Recovery Charge - 1.43 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms
- ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
Figure 19. TO-220, Molded, 3Lead, Jedec Variation AB ically the warranty therein, which covers Fairchild products.
Figure 20. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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