8N50L-TA3-T

8N50_12 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

UNISONIC TECHNOLOGIES CO., LTD 8N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-546.c 8A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. „ FEATURES * RDS(ON)=0.85Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested „ SYMBOL 1.Gate 3.Source 2.Drain

1 TO-220F1

„ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 8N50L-TA3-T 8N50G-TA3-T TO-220 G D S Tube 8N50L-TF1-T 8N50G-TF1-T TO-220F1 G D S Tube 8N50L-TF2-T 8N50G-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

8N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 4 6 . c „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous (TC=25°C) I D 8(Note 2) A Pulsed (Note 3) I DM 32(Note 2) A Avalanche Current (Note 3) I AR 8 A Avalanche Energy Single Pulsed (Note 4) E AS 320 mJ Repetitive (Note 5) E AR 12.5 mJ Power Dissipation TO-220 PD 125 W TO-220F1 42 TO-220F2 62.5 Derate above 25°C TO-220 1 W/°C TO-220F1 0.33 TO-220F2 0.5 Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width lim ited by maximum junction temperature 4. L = 10mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. I SD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC °C/W TO-220F1 3 TO-220F2 2

8N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 4 6 . c „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 500 V Drain-Source Leakage Current I DSS V DS=500V, VGS=0V 25 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=4.5A 0.77 0.85 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 850 1130 pF Output Capacitance C OSS 115 155 pF Reverse Transfer Capacitance C RSS 9 13.5 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=400V, ID=8A (Note 1, 2) 18 24 nC Gate to Source Charge Q GS 5 nC Gate to Drain Charge Q GD 7.5 nC Turn-ON Delay Time t D(ON) VDD=250V, ID=8A, RG=25Ω (Note 1, 2) 15 40 ns Rise Time t R 38 86 ns Turn-OFF Delay Time t D(OFF) 46 102 ns Fall-Time t F 33 76 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 8 A Maximum Body-Diode Pulsed Current I SM 32 A Drain-Source Diode Forward Voltage V SD I S=8A, VGS=0V 1.6 V Body Diode Reverse Recovery Time t rr IS=8A, VGS=0V, dIF/dt=100A/µs (Note 1) 44 ns Body Diode Reverse Recovery Charge Q RR 45 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

8N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 4 6 . c „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG VGS VGS 200nF Same Type as DUT 3mA Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

8N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 4 6 . c „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current

8N50 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 4 6 . c UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.