8N50 VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Lower Gate Charge Qg Results in Simpler Drive Reqirements
  • Improved Gate, Avalanch e and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maxi mum junction temperature (see fig. 11). c. I SD  14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()V GS = 10 V 0.660 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) 36 Configuration S ingle N-Channel MOSFET G D S TO-220AB G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, un less otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drai n-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 8.1 Pulsed Drai n Currenta IDM 50 Linear Derating Factor 2.0 W/°C Single Puls e Avalanche Energyb EAS 560 mJ Avalanch e Currenta IAR 13 A Repetitive Ava lanche Energya EAR 25 mJ Maximum Power Dissipa tion TC = 25 °C PD 250 W Peak Dio de Recovery dV/dtc dV/dt 9.2 V/ns Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to + 150 Solderin g Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

/$IBOOFM507 %4 Power MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction tempe rature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C oss eff. is a fixed c apacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTAN CE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambien t RthJA -6 2 °C/WCase-to-Sink, Flat, G reasd Surface RthCS 0.50 - Maximum Junction-to-Case (Dr ain) RthJC -0 .50 SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) PARAMETER SYMBOL TEST CO NDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Vo ltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coef ficient VDS/TJ Reference to 25 °C, I D = 1 mA - 0.55 - V / Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate -Source Leakage IGSS VGS = ± 20V Zero Gate Volta ge Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Sourc e On-State Resistance RDS(on) V GS = 10 V ID = 8.4 Ab - 0.660  Forward Trans conductance gfs VDS = 50 V, ID = 8.4 A 8.1 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1910 - pF Output Capacitance Coss - 290 - Rever se Transfer Capacitance Crss -1 1- Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 2730 - VDS = 400 V, f = 1.0 MHz - 82 - Ef fective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 160 - Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b -- 81 nC Gate-Source Charge Qgs -- 20 Gate-Drain Charge Qgd -- 36 Turn-On Delay Time td(on) VDD = 250 V, ID = 14 A, Rg = 7.5, see fig. 10b -1 5- ns Rise Time tr -3 9- Turn-Off Del ay Time td(off) -3 9- Fall Tim e tf -3 1- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integr al reverse p - n junction diode A Pulsed Diode Forward Currenta ISM -- 5 6 Body Di ode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb -- 1 . 5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, TJ = 125 °C, dI/dt = 100 A/μsb - 370 550 ns Body Di ode Reverse Recovery Charge Q rr -4 .4 6.5 μ C Body Diode Reverse Recovery Current I RRM -2 1 3 1 A Forwar d Turn-On Time ton Intrinsic turn-on time is negligible (tur n-on is dominated by LS and LD) S D G - - ± nA100 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Outp ut Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature ID, Drain-to-Source Current (A) 91095_01 20 µs Pulse Width TJ = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) 1 10 102 10-2 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 0.1 0.1 102 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T J = 150 °C 91095_02 4.5 V 1 10 102 0.1 0.1 102 20 µs Pulse Width VDS = 50 V ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 6 8 10 12 14 164 91095_03 TJ = 25 °C TJ = 150 °C 102 0.1 ID = 13 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 91095_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

Fig. 5 - Typical Capa citance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 10 102 C, Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91095_05 105 102 103 104 1 103 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 12.5 7.5 2.5 0 12 60483624 VDS = 100 V VDS = 250 V VDS = 400 V 91095_06 ID = 14 A VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) VGS = 0 V 91095_07 TJ = 25 °C TJ = 150 °C 102 0.1 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse 102 103 0.1 10 102 103 104 91095_08 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

Fig. 9 - Maximum Dr ain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 150 ID, Drain Current (A) TC, Case Temperature (°C) 91095_09 1251007550 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-3 10-5 10-4 10-3 10-2 0.1 1 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t 1/t2 2. Peak TJ = PDM x ZthJC + TC Single Pulse (Thermal Response) D = 0.50 0.20 0.05 0.02 0.01 91095_11 0.10 10-2 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

Fig. 12a - Unclamp ed Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A RG IAS 0.01 Ωtp D.U.T. LVDS - VDD Driver 15 V 20 V IAS VDS tp 25 50 75 100 125 150 230 460 690 920 1150 Starting Tj, Junction Temperature (°C) EAS, Single Pulse Avalanche Energy (mJ) ID TOP BOTTOM 6.3A 8.9A 14A QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

  • M* = 0.052 inches to 0.064 inches (dimension including protru sion), heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 8N50 TO220 A ll data sheet.com