88NXX_1112

88NXX_1112 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 88NXX Preliminary CMOS IC www.unisonic.com.tw 1 of 8 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-368.d BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR „ DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external capacitor. N-ch open-drain output form is available. The UTC 88NXX is generally used for power supply monitor of portable equipment such as notebook PCs, digital still cameras, PDAs, and mobile phones, constant voltage power monitor of cameras, video equipment and communication equipment, and power monitor or reset of CPUs and microcomputers. „ FEATURES * Extremely Low Current Dissipation : 1.2μA Typ. (Detection Voltage ≥ 1.5 V @ V DD=3.5 V) * ±2.0 % Accuracy Detection Voltage * Hysteresis Characteristics: 5% TYP * Detection Voltage varies from 1.5V to 6.0V with 0.1V step * Output Forms: N-ch open-drain output (when it is in Active-Low) „ ORDERING INFORMATION Ordering Number Package Packing Lead Free Halogen Free 88NXXL-AF5-R 88NXXG-AF5-R SOT-25 Tape Reel 88NXXL-AD4-R 88NXXG-AD4-R SOT-143 Tape Reel Note: XX: Output Voltage, refer to Marking Information.

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . d „ MARKING INFORMATION PACKAGE VOLTAGE CODE MARKING SOT-143 14:1.4V 18:1.8V 21:2.1V 24:2.4V 27:2.7V 28:2.8V 29:2.9V 33:3.3V SOT-25 „ PIN CONFIGURATION 4 3 1 2 VSS CD VDD VOUT For SOT-25 For SOT-143 „ PIN DESCRIPTION PIN NO PIN NAME DESCRIPTION SOT-143 SOT-25 4 1 V OUT Voltage Detection Output Pin 2 2 V DD Voltage Input Pin 1 3 V SS GND Pin - 4 NC No Connection (Note) 3 5 CD Connection Pin For Delay Capacitor Note: The NC pin is electrically open and can be connected to V DD or VSS.

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . d „ BLOCK DIAGRAM VDD VSS VREF Delay circuit CD VOUT

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . d „ ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Power Supply Voltage V DD - VSS 12 V CD pin Input Voltage V CD V SS -0.3 ~ VDD+0.3 V Output Voltage V OUT V SS -0.3 ~ VSS +12 V Output Current I OUT 50 mA Power Dissipation SOT-143 PD 150 mW SOT-25 250 mW Operating Temperature T OPR -40 ~ +85 °C Storage Temperature T STG -40 ~ +125 °C Note: Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Detection Voltage: 1.4V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD= 2.0V 2.5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V,VDD=0.95V 0.23 0.64 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD= 2V, CD=4.7 nF 27 42 ms Detection Voltage: 1.8V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=3.5V 2.8 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V,VDD=1.2V 0.59 1.36 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=3.5V, CD=4.7 nF 27 42 ms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . d „ ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 2.1V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=3.5 V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=1.2V 0.59 1.36 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=3.5V, CD=4.7 nF 27 42 ms Detection Voltage: 2.4V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=3.5V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=1.2V 0.59 1.36 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=3.5V, CD=4.7 nF 27 42 ms Detection Voltage: 2.7V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=4.5V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=4.5V, CD=4.7 nF 12 27 ms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-368.d „ ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 2.8V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=4.5V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=4.5V, CD=4.7 nF 12 27 ms Detection Voltage: 2.9V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=4.5 V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=4.5V, CD=4.7 nF 12 27 ms

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-368.d „ ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 3.3V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=4.5V 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 T A=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=4.5V, CD=4.7 nF 12 27 ms Note: 1. -VDET: Actual detection voltage -VDET(S): Specified detection voltage 2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation: (1) (2) (3 )DET DET DET AA DET -V -V [mV/ C] -V (Typ.)[V] [ppm / C] 1000TT - V ΔΔ °= × °÷ΔΔ × (1) Temperature change ratio of the detection voltage (2) Specified detection voltage (3) Detection voltage temperature coefficient

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-368.d „ TEST CIRCUITS 88NXX Series VDD VOUT CDVSS VDD V V 100kΩ Fig.1 Fig.2 88NXX Series VDD VOUT CDVSS VDD VDSV A V 88NXX Series VDD VOUT VSS OscilloscopeP.P. 100kΩ CD Fig.3 Fig.4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.