88NXX UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 88NXX Preliminary CMOS IC www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-368.b BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR „ DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external capacitor. N-ch open-drain output form is available. The UTC 88NXX is generally used for power supply monitor of portable equipment such as notebook PCs, digital still cameras, PDAs, and mobile phones, constant voltage power monitor of cameras, video equipment and communication equipment, and power monitor or reset of CPUs and microcomputers. „ FEATURES * Extremely Low Current Dissipation : 1.2μA Typ. (Detection Voltage ≥ 1.5 V @ V DD=3.5 V) * ±2.0 % Accuracy Detection Voltage * Hysteresis Characteristics: 5% TYP * Detection Voltage varies from 1.5V to 6.0V with 0.1V step * Output Forms: N-ch open-drain output (when it is in Active-Low) „ ORDERING INFORMATION Ordering Number Package Packing 88NXXG-AF5-R SOT-25 Tape Reel Note: XX: Output Voltage, refer to Marking Information.

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . b „ MARKING INFORMATION PACKAGE VOLTAGE CODE MARKING SOT-25 21:2.1V 29:2.9V „ PIN CONFIGURATION „ PIN DESCRIPTION PIN NO PIN NAME DESCRIPTION

1 V OUT Voltage Detection Output Pin

2 V DD Voltage Input Pin

3 V SS GND Pin

4 NC No Connection (Note)

5 CD Connection Pin For Delay Capacitor

Note: The NC pin is electrically open and can be connected to V DD or VSS.

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . b „ BLOCK DIAGRAM VDD VSS VREF Delay circuit CD VOUT

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 3 6 8 . b „ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Power Supply Voltage V DD - VSS 12 V CD pin Input Voltage V CD V SS -0.3 ~ VDD+0.3 V Output Voltage V OUT V SS -0.3 ~ VSS +12 V Output Current I OUT 50 mA Power Dissipation P D 250 mW Operating Temperature T OPR -40 ~ +85 °C Storage Temperature T STG -40 ~ +125 °C Note: Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Detection Voltage: 2.1V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=3.5 V 1.2 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=1.2V 0.59 1.36 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 Ta=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=3.5V, CD=4.7 nF 20 30 34 ms Detection Voltage: 2.9V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -V DET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width V HYS 1 -VDET ×0.03 -VDET ×0.05 -VDET ×0.08 V Current Consumption I SS 2 V DD=4.5 V 1.3 5 μA Operating Voltage V DD 1 0.95 10.0 V Output Current I OUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current I LEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V-×TaΔ V-Δ 1 Ta=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time t D 4 V DD=4.5V, CD=4.7 nF 20 27 34 ms Note: 1. -VDET: Actual detection voltage -VDET(S): Specified detection voltage 2. The temperature change ratio in t he detection voltage [mV/°C] is calculated by using the following equation: 1000÷]C°/ppm[-V×TaΔ V-Δ×]V.)[Typ(-V=C]°[mV/TaΔ V-Δ )3( DET DET)2(DET(1) DET (1) Temperature change ra tio of the detection voltage (2) Specified detection voltage (3) Detection voltage temperature coefficient