BSC080N03LSG_13 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC1) for target applications
  • N-channel; Logic level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Superior thermal resistance
  • Avalanche rated
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 53 A V GS=10 V, T C=100 °C 33 V GS=4.5 V, T C=25 °C 43 V GS=4.5 V, T C=100 °C 27 V GS=10 V, T A=25 °C, R thJA=50 K/W2) 14 Pulsed drain current3) I D,pulse T C=25 °C 212 Avalanche current, single pulse4) I AS T C=25 °C 45 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 15 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 VDS 30 V RDS(on),max 8 mW ID 53 A Product Summary PG-TDSON-8 Type Package Marking BSC080N03LS G PG-TDSON-8 080N03LS Rev. 2.1 page 1 2013-05-17

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 35 W T A=25 °C, R thJA=50 K/W2) 2.5 Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC bottom - - 3.6 K/W top - - 20 Device on PCB R thJA 6 cm2 cooling area2) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 9.6 12 mW V GS=10 V, I D=30 A - 6.7 8 Gate resistance R G 0.5 1.0 1.8 W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 30 59 - S 3) See figure 3 for more detailed information Value Values 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2013-05-17

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1300 1700 pF Output capacitance C oss - 510 680 Reverse transfer capacitance Crss - 25 - Turn-on delay time t d(on) - 3.3 - ns Rise time t r - 2.8 - Turn-off delay time t d(off) - 15 - Fall time t f - 2.6 - Gate Charge Characteristics5) Gate to source charge Q gs - 4.0 5.3 nC Gate charge at threshold Q g(th) - 1.9 2.6 Gate to drain charge Q gd - 1.8 3.0 Switching charge Q sw - 3.9 5.8 Gate charge total Q g - 7.5 10.0 Gate plateau voltage V plateau - 3.4 - V Gate charge total Q g V DD=15 V, I D=30 A, V GS=0 to 10 V - 16 21 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.5 8.6 nC Output charge Q oss V DD=15 V, V GS=0 V - 13 17 Reverse Diode Diode continuous forward current I S - - 32 A Diode pulse current I S,pulse - - 212 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.88 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 5) See figure 16 for gate charge parameter definition 4) See figure 13 for more detailed information T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W V DD=15 V, I D=30 A, V GS=0 to 4.5 V Rev. 2.1 page 3 2013-05-17

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 10-1 100 101 102 103 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 0.01 0.1 0 0 0 0 0 0 1 ZthJC [K/W] tp [s] 0 40 80 120 160 Ptot [W] TC [°C] 0 40 80 120 160 ID [A] TC [°C] Rev. 2.1 page 4 2013-05-17

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 11.5 V 0 10 20 30 40 50 RDS(on) [mW] ID [A] 25 °C 150 °C 100 120 0 1 2 3 4 5 ID [A] VGS [V] 100 120 140 0 40 80 120 160 gfs [S] ID [A] 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 100 150 200 0 1 2 3 ID [A] VDS [V] Rev. 2.1 page 5 2013-05-17

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 104 0 10 20 30 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 100 1000 IF [A] VSD [V] Rev. 2.1 page 6 2013-05-17

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 100 1 10 100 1000 IAV [A] tAV [µs]

6 V 15 V

VGS [V] Qgate [nC] Rev. 2.1 page 7 2013-05-17

Package Outline PG-TDSON-8-5 PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 2.1 page 8 2013-05-17

PG-TDSON-8: Tape Dimensions in mm Rev. 2.1 page 9 2013-05-17

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2013-05-17