86CNQ200 SMCDIODE | Alldatasheet
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Technical content
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 86CNQ200 SCHOTTKY RECTIFIER Applications Features 86CNQ200 86CNQ200SL 86CNQ200SM PRM2 PRM2-SL PRM2-SM Maximum Ratings(limiting values, at 25 °C unless otherwise specified) Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 200 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@TC=130°C, rectangularwaveform 40(PerLeg) A80(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(Perleg) IFSM 8.3ms,halfSinepulse 800 A 175℃ TJ operation Center tap module Very Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Low profile, high current package This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional electrical and life testing can be performed upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistance JunctiontoCase (perleg) RJC DCoperation 0.5 C/W TypicalThermalResistance JunctiontoCase (perpackage) RJC DCoperation 0.25 C/W TypicalThermalResistance,case toHeatSink Rcs Mountingsurface,smoothand greased 0.21 C/W MountingTorque TM - 40(min) Kg-cm58(max) CaseStyle PRM2PRM2-SLPRM2-SM Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop (Perleg)* VF1 @40A,Pulse,TJ =25C @80A,Pulse,TJ =25C 0.84 0.92 0.99 1.14 V VF2 @40A,Pulse,TJ =125C @80A,Pulse,TJ =125C 0.73 0.81 0.77 0.85 V ReverseCurrent(Perleg)* IR1 @VR =ratedVR,TJ =25C 0.1 1100 uA IR2 @VR =ratedVR,TJ =125C 0.07 24 mA JunctionCapacitance (Perleg) CT @VR =5V,TC =25C fSIG =1MHz 740 900 pF Thermal-Mechanical Specifications:
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 Ratings and Characteristics Curves Marking Diagram WhereXXXX isYYWW 1st row SSYYWWL 2ndrow 86CNQ200/SL/SM 3rdrow 123(pin) SS =SS YY =Year WW =Week Cautions:Molding resin Epoxy resin UL:94V-0
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 Device Package Approximate Weight(g) Terminals finish Base plate finish Shipping 86CNQ200 PRM2 8.6 Nickelplated Nickelplated 48pcs/box 86CNQ200S2 PRM2 8.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box 86CNQ200SL PRM2-SL 5.3 PureSnplated PureSnplated 100pcs/box 86CNQ200SM PRM2-SM 5.6 Nickelplated Nickelplated 48pcs/box 86CNQ200SMS2 PRM2-SM 5.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box
Ordering Information
Mechanical Dimensions PRM2 (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 37.72 38.23 1.485 1.506 B 5.08 0.200 C 0.62 1.02 0.024 0.040 D 10.38 12.98 0.408 0.511 E 1.78 2.28 0.070 0.090 F 8.46 9.06 0.333 0.357 G 9.24 9.85 0.363 0.388 H 0.75 1.15 0.029 0.046 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.273 0.298 K 2.40 2.60 0.094 0.103 L 29.51 30.40 1.161 1.197 M 3.75 4.33 0.147 0.171
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 Mechanical Dimensions PRM2-SL (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 19.70 20.30 0.776 0.799 B 16.51 17.02 0.650 0.670 C 0.62 1.02 0.024 0.040 D 4.97 5.97 0.196 0.235 E 1.78 2.28 0.070 0.090 F 8.46 9.06 0.333 0.357 G 2.04 2.54 0.080 0.100 H 0.75 1.15 0.029 0.045 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.274 0.297 K 2.21 2.71 0.087 0.106 Mechanical Dimensions PRM2-SM (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 19.70 20.30 0.776 0.799 B 5.08 0.200 C 0.62 1.02 0.024 0.040 D 10.38 12.98 0.408 0.511 E 1.78 2.28 0.070 0.090 F 8.46 9.06 0.333 0.357 G 9.24 9.85 0.363 0.388 H 0.75 1.15 0.029 0.045 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.273 0.298 K 2.21 2.71 0.087 0.106
Data Sheet N1133, Rev. B China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com 86CNQ200 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionofthe datasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationof theuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualpropertyclaimsoranyother problemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuseata valueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..