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Collector-Emitter Voltage V CEO 25 V Collector-Base voltage V CBO 40 V Emitter-base Voltage V EBO 5 V Collector current-continuoun I C 800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) P D T A = 25 °C 225 mW Derate above 25 °C 1.8 mW /°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D Alumina Substrate,(2) T A = 25 °C 300 mW Derate above 25 °C 2.4 mW /°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg -55 to +150 °C DEVICE MARKING 8550QLT1 = 1YD 8550PLT1 =85P ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V (BR)CEO 25 – – V(I C = 1.0mA) Emitter-Base Breakdown Voltage V (BR)EBO 5– – V(I E = 100µA) Collector-Base Breakdown voltage V (BR)CBO 40 – – V(I C= 100µA) Collector Cutoff Current I CBO – – 150 nA(VCB = 35 V) Emitter Cutoff Current I EBO – – 150 nA(VEB =4V) SOT– 23 General Purpose Transistors BASE EMITTER COLLECTOR FEATURE PNP Silicon We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking 8550PLT1 8550QLT1 8550RLT1 Shipping 3000/Tape&Reel 3000/Tape&Reel 85P 1YD 1YF 3000/Tape&Reel 8550RLT1 1YF 2012- WILLAS ELECTRONIC CORP. 8550xLT1
Characteristic Symbol Min Typ Max Unit DC Current Gain h FE 100 – 00(I C =100mA V CE=1V) Collector-Emitter Saturation Voltage V CE(S) – – 0.5 V(I C =800mA IB=80mA) NOTE: * PQR hFE 100~200 150~300 200~400 2012- WILLAS ELECTRONIC CORP. General Purpose Transistors 8550xLT1
0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- WILLAS ELECTRONIC CORP. General Purpose Transistors 8550xLT1 Dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20)