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Technical content

  1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP)

FEATURES

z z Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC = -100μA, I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current I CBO V CB= -40V, IE=0 -0.1 μA Collector cut-off current I CEO V CE= -20V, IB=0 -0.1 μA Emitter cut-off current I EBO V EB= -3V, IC=0 -0.1 μA h FE(1) V CE= -1V, IC= -50mA 120 400 DC current gain h FE(2) V CE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) I C=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C=-500mA, IB= -50mA -1.2 V Transition frequency f T VCE= -6V, IC= -20mA f=30MHz

150 MHz

CLASSIFICATION OF h FE(1) Rank L H Range 120-200 200-350 8550SxLT1 2012-0 WILLAS ELECTRONIC CORP. z

-0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER T a=25℃ -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) IC —— VCE IB=-40uA -80uA -500 VBE IC —— T a=25℃ T a=100 ℃ COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC COMMON EMITTER V CE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 400 -20 VCB/VEBCob/Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cib Cob f=1MHz I E=0/IC=0 Ta=25 ℃ PC —— Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ fT —— -500 Ta =100 ℃ Ta =25℃ β=10 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -500 Typical Characteristics -500 β=10 Ta =25℃ Ta =100 ℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ hFE —— IC 500 -500 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors 8550SxLT1

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-0 WI LLAS ELECTRONIC CORP.2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors 8550SxLT1

Ordering Information: Device PN Packing 8550S x(2)LT1 G(1)‐WS Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” (2) CLASSIFICATION OF hFE RANK WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameter s which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized fo r use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS compone nts for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 8550SxLT1 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors