8550SS DGNJDZ | Alldatasheet
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8550SS TRANSISTOR (PNP)
FEATURES
High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO I E=-100µA, IC=0 -5 V Collector cut-off current ICBO V CB=-40V, IE=0 -100 nA Collector cut-off current ICEO V CE=-20V, IB=0 -100 nA Emitter cut-off current IEBO V EB=-5V, IC=0 -100 nA hFE(1) V CE=-1V, IC=-100mA 120 400 DC current gain hFE(2) V CE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) I C=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V Transition frequency fT V CE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob V CB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120–200 200–350 300–400 MARKING Y2R SOT–23 1. BASE EMITTER COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
-200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -300 -400 -500 -600 -700 -800 -900 -1000 100 -1 -10 -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 100 0 25 50 75 100 125 150 100 150 200 250 300 350 VCE=-1V Ta=25 Ta=100 o C I C V BE BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) β=10 Ta=25 Ta=100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat — — Ta=100 Ta=25 500 V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C h FE C ob C ib 100 -0.2 f=1MHz I E =0/ I C Ta=25 o C V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Ta=25 0.2 Ta=100 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) VCE-10V Ta=25 o C I C fT —— 500 Pc —— Ta COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com