8550S DAYA | Alldatasheet
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TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) FEATURE Excellent h FE linearity MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -500 mA P C Collector Dissipation 625 mW T J Junction Temperature 150 ℃ T stg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C = -100uA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100uA, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -0.1 uA Collector cut-off current I CEO V CE = -20V,I B =0 -0.1 uA Emitter cut-off current I EBO V EB = - 3V, I C =0 -0.1 uA h FE(1) V CE = -1V, I C = -50mA 85 400 DC current gain h FE(2) V CE = -1V, IC= -500mA 50 Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B =-50mA -1.2 V Transition frequency f T V CE =- 6V, I C =-20mA f =30MHz
150 MHz
(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 TO-92 1. EMITTER 2. COLLECTOR 3. BASE
Typical Characteristics 8550S