8403A

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Document overview

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• PDF pages: 12

Technical content

Features

• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over V oltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial Drain Source Temperature Limit Gate Input Current Limit Current Sense Overvoltage Protection ESD Protection www.onsemi.com VDSS (Clamped) RDS(on) TYP ID MAX (Limited)

42 V 53 m/C0087 @ 10 V 15 A

SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM A = Assembly Location Y = Year W, WW = Work Week xxxxx = V8403A or V8403B G or /C0071= Pb−Free Package (Note: Microdot may be in either location) AYW xxxxx/C0071 /C0071 GATE DRAIN SOURCE DRAIN 2 3 1 2 DPAK CASE 369C YWW xxxxxG See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet.

ORDERING INFORMATION

should not be assumed, damage may occur and reliability may be affected.

1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.

Figure 1. Voltage and Current Convention

NCV8403A, NCV8403B www.onsemi.com MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 /C0109Adc) (VGS = 0 Vdc, ID = 250 /C0109Adc, TJ = −40°C to 150°C) (Note 3) V(BR)DSS Vdc Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3) IDSS 0.6 2.5 5.0 /C0109Adc Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSS − 50 125 /C0109Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.7 5.0 2.2 Vdc mV/°C Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3) RDS(on) 123 m/C0087 Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3) RDS(on) 105 135 m/C0087 Source−Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) VSD − 0.95 1.1 V SWITCHING CHARACTERISTICS (Note 3) Turn−ON Time (10% VIN to 90% ID) VIN = 0 V to 5 V, VDD = 25 V ID = 1.0 A, Ext RG = 2.5 /C0087 tON 44 /C0109s/C0109s Turn−OFF Time (90% VIN to 10% ID) tOFF 84 Turn−ON Time (10% VIN to 90% ID) VIN = 0 V to 10 V, VDD = 25 V, ID = 1.0 A, Ext RG = 2.5 /C0087 tON 15 Turn−OFF Time (90% VIN to 10% ID) tOFF 116 Slew−Rate ON (20% VDS to 50% VDS) Vin = 0 to 10 V, VDD = 12 V, RL = 4.7 /C0087 −dVDS/dtON 2.43 V/C0047/C0109s Slew−Rate OFF (80% VDS to 50% VDS) dVDS/dtOFF 0.83 SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit VGS = 5.0 V, VDS = 10 V VGS = 5.0 V, TJ = 150°C (Note 3) ILIM 10 5.0 Adc Current Limit VGS = 10 V, VDS = 10 V VGS = 10 V, TJ = 150°C (Note 3) ILIM 12 8.0 Adc Temperature Limit (Turn−off) VGS = 5.0 Vdc (Note 3) TLIM(off) 150 175 200 °C Thermal Hysteresis VGS = 5.0 Vdc /C0068TLIM(on) − 15 − °C Temperature Limit (Turn−off) VGS = 10 Vdc (Note 3) TLIM(off) 150 165 185 °C Thermal Hysteresis VGS = 10 Vdc /C0068TLIM(on) − 15 − °C GATE INPUT CHARACTERISTICS (Note 3) Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 /C0109A VGS = 10 V ID = 1.0 A 400 Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.1 mA VGS = 10 V, VDS = 10 V 0.6 Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.45 mA VGS = 10 V, VDS = 10 V 1.5 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3) Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V 3. Not subject to production testing. 4. Pulse Test: Pulse Width = 300 /C0109s, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part.

Figure 2. Single Pulse Maximum Switch−off Figure 3. Single−Pulse Maximum Switching Figure 4. Single Pulse Maximum Inductive Figure 5. Single−Pulse Maximum Inductive

6 V 7 V 8 V 9 V

Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics

NCV8403A, NCV8403B www.onsemi.com Device Package Shipping† NCV8403ASTT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8403ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8403ADTRKG DPAK (Pb−Free) 2500 / Tape & Reel NCV8403BDTRKG DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

NCV8403A, NCV8403B www.onsemi.com PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN D E b e 12 3 0.08 (0003) A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 1.5 0.059 /C0466mm inches/C0467SCALE 6:1 3.8 0.15 2.0 0.079 6.3 0.2482.3 0.091 2.3 0.091 2.0 0.079 SOLDERING FOOTPRINT HE DIM A MIN NOM MAX MIN MILLIMETERS 1.50 1.63 1.75 0.060 INCHES A1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 NOM MAX L1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 HE − − 0° 10° 0° 10° /C0113 /C0113 L

NCV8403A, NCV8403B www.onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* b D E M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. 12 3 H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 e BOTTOM VIEW Z BOTTOM VIEW SIDE VIEW TOP VIEW ALTERNATE CONSTRUCTIONS NOTE 7 Z ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NCV8403/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative