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6:1, Single-Ended Multiplexer 83056 Data Sheet ©2016 Integrated Device Technology, Inc Revision B March 10, 20161 GENERAL DESCRIPTION The 83056 is a low skew, 6:1, Single-ended Multi- plexer from IDT. The 83056 has six selectable single- ended clock inputs and one single-ended clock output. The output has a V DDO pin which may be set at 3.3V, 2.5V, or 1.8V, making the device ideal for use in voltage transla- tion applications. An output enable pin places the output in a high impedance state which may be useful for testing or debug purposes. The device operates up to 250MHz and is pack- aged in a 16 TSSOP package. BLOCK DIAGRAM P IN ASSIGNMENT

FEATURES

 6:1 single-ended multiplexer  Q nominal output impedance: 7Ω (V DDO = 3.3V)  Maximum output frequency: 250MHz  Propagation delay: 3ns (maximum), V DD = V DDO = 3.3V  Input skew: 225ps (maximum), V DD = V DDO = 3.3V  Part-to-part skew: 475ps (maximum), V DD = V DDO = 3.3V  Additive phase jitter, RMS: 0.19ps (typical), 3.3V/3.3V  Operating supply modes: V DD DDO 3.3V/3.3V 3.3V/2.5V 3.3V/1.8V 2.5V/2.5V 2.5V/1.8V  -40°C to 85°C ambient operating temperature  Available in lead-free (RoHS 6) package 83056 16-Lead TSSOP 4.4mm x 5.0mm x 0.92mm package body G Package Top View CLK0 CLK1 CLK2 CLK3 CLK4 CLK5 SEL2 SEL1 SEL0 OE Q

83056 Data Sheet

TABLE 1. PIN DESCRIPTIONS TABLE 2. PIN CHARACTERISTICS TABLE 3. CONTROL INPUT FUNCTION TABLE 1 Q Output Single-ended clock output. LVCMOS/LVTTL interface levels. Input Pulldown Single-ended clock inputs. LVCMOS/LVTTL interface levels. 3 OE Input Pullup Output enable. When LOW, outputs are in HIGH impedance state. When HIGH, outputs are active. LVCMOS / LVTTL interface levels. 5 GND Power Power supply ground. SEL0 Input Pulldown Clock select input. See Control Input Function Table. LVCMOS / LVTTL interface levels. Power Core and input supply pin. NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.

110 L O W

111 L O W

©2016 Integrated Device Technology, Inc Revision B March 10, 20163 ABSOLUTE MAXIMUM RATINGS Supply Voltage, V DD 4.6V Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O -0.5V to V DDO + 0.5V Package Thermal Impedance, θ JA 89°C/W (0 lfpm) Storage Temperature, T STG -65°C to 150°C NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifi cations only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V DD = V DDO TABLE 4D. POWER SUPPLY DC CHARACTERISTICS, V DD = V DDO TABLE 4B. POWER SUPPLY DC CHARACTERISTICS, V DD = 3.3V±5%, V DDO TABLE 4C. POWER SUPPLY DC CHARACTERISTICS, V DD = 3.3V±5%, V DDO = 1.8V±0.2V, TA = -40°C TO 85°C TABLE 4E. POWER SUPPLY DC CHARACTERISTICS, V DD = 2.5V±5%, V DDO = 1.8V±0.2V, TA = -40°C TO 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Power Supply Voltage 3.135 3.3 3.465 V V DDO Output Supply Voltage 3.135 3.3 3.465 V I DD Power Supply Current 40 mA I DDO Output Supply Current 5m A Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Power Supply Voltage 3.135 3.3 3.465 V V DDO Output Supply Voltage 2.375 2.5 2.625 V I DD Power Supply Current 40 mA I DDO Output Supply Current 5m A Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Power Supply Voltage 3.135 3.3 3.465 V V DDO Output Supply Voltage 1.71 1.8 1.89 V I DD Power Supply Current 40 mA I DDO Output Supply Current 5m A Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Power Supply Voltage 2.375 2.5 2.625 V V DDO Output Supply Voltage 2.375 2.5 2.625 V I DD Power Supply Current 35 mA I DDO Output Supply Current 5m A Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Power Supply Voltage 2.375 2.5 2.625 V V DDO Output Supply Voltage 1.71 1.8 1.89 V I DD Power Supply Current 35 mA I DDO Output Supply Current 5m A

©2016 Integrated Device Technology, Inc Revision B March 10, 20164 TABLE 5A. AC CHARACTERISTICS, V DD = V DDO TABLE 4F. LVCMOS/LVTTL DC CHARACTERISTICS, TA = -40°C TO 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units f MAX Output Frequency 250 MHz tp LH Propagation Delay, Low to High; NOTE 1 2.4 2.7 3.0 ns tp HL Propagation Delay, High to Low; NOTE 1 2.5 2.7 2.9 ns tsk(i) Input Skew; NOTE 2 55 225 ps tjit Buffer Additive Phase Jitter, RMS; refer to Additive Phase Jitter Section; NOTE 3 155.52MHz, (12kHz to 20MHz) 0.19 ps tsk(pp) Part-to-Part Skew; NOTE 2, 4 475 ps t R / t F Output Rise/Fall Time 20% to 80% 50 500 ps odc Output Duty Cycle 45 55 % MUX ISOL MUX Isolation @ 100MHz 45 dB NOTE 1: Measured from V DD /2 of the input to V DDO /2 of the output. NOTE 2: This parameter is defi ned in accordance with JEDEC Standard 65. NOTE 3: Driving only one input clock. NOTE 4: Defi ned as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using the same type of input on each device, the output is measured at V DDO /2. Symbol Parameter Test Conditions Minimum Typical Maximum Units V IH Input High Voltage V DD = 3.3V ± 5% 2 V DD + 0.3 V V DD = 2.5V ± 5% 1.7 V DD + 0.3 V V IL Input Low Voltage V DD V DD I IH Input High Current CLK0:CLK5, SEL0:SEL2 V DD = 3.3V or 2.5V ± 5% 150 µA OE V DD = 3.3V or 2.5V ± 5% 5 µA I IL Input Low Current CLK0:CLK5, SEL0:SEL2 V DD = 3.3V or 2.5V ± 5% -5 µA OE V DD = 3.3V or 2.5V ± 5% -150 µA V OH Output HighVoltage V DDO = 3.3V ± 5%; NOTE 1 2.6 V V DDO = 2.5V ± 5%; NOTE 1 1.8 V V DDO = 1.8V ± 5%; NOTE 1 V DD - 0.3 V V OL Output Low Voltage V DDO = 3.3V ± 5%; NOTE 1 0.5 V V DDO = 2.5V ± 5%; NOTE 1 0.45 V V DDO = 1.8V ± 5%; NOTE 1 0.35 V NOTE 1: Outputs terminated with 50W to V DDO /2. See Parameter Measurement section, “Load Test Circuit” diagrams.

©2016 Integrated Device Technology, Inc Revision B March 10, 20165 TABLE 5B. AC CHARACTERISTICS, V DD = 3.3V ± 5%, V DDO TABLE 5C. AC CHARACTERISTICS, V DD = 3.3V ± 5%, V DDO Symbol Parameter Test Conditions Minimum Typical Maximum Units f MAX Output Frequency 250 MHz tp LH Propagation Delay, Low to High; NOTE 1 2.5 2.8 3.1 ns tp HL Propagation Delay, High to Low; NOTE 1 2.6 2.8 3.0 ns tsk(i) Input Skew; NOTE 2 45 150 ps tjit Buffer Additive Phase Jitter, RMS; refer to Additive Phase Jitter Section; NOTE 3 155.52MHz, (12kHz to 20MHz) 0.14 ps tsk(pp) Part-to-Part Skew; NOTE 2, 4 400 ps t R / t F Output Rise/Fall Time 20% to 80% 50 500 ps odc Output Duty Cycle 45 55 % MUX ISOL MUX Isolation @ 100MHz 45 dB NOTE 1: Measured from V DD /2 of the input to V DDO /2 of the output. NOTE 2: This parameter is defi ned in accordance with JEDEC Standard 65. NOTE 3: Driving only one input clock. NOTE 4: Defi ned as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using the same type of input on each device, the output is measured at V DDO /2. Symbol Parameter Test Conditions Minimum Typical Maximum Units f MAX Output Frequency 250 MHz tp LH Propagation Delay, Low to High; NOTE 1 2.7 3.2 3.8 ns tp HL Propagation Delay, High to Low; NOTE 1 2.8 3.3 3.8 ns tsk(i) Input Skew; NOTE 2 50 150 ps tjit Buffer Additive Phase Jitter, RMS; refer to Additive Phase Jitter Section; NOTE 3 155.52MHz, (12kHz to 20MHz) 0.16 ps tsk(pp) Part-to-Part Skew; NOTE 2, 4 475 ps t R / t F Output Rise/Fall Time 20% to 80% 100 700 ps odc Output Duty Cycle 45 55 % MUX ISOL MUX Isolation @ 100MHz 45 dB NOTE 1: Measured from V DD /2 of the input to V DDO /2 of the output. NOTE 2: This parameter is defi ned in accordance with JEDEC Standard 65. NOTE 3: Driving only one input clock. NOTE 4: Defi ned as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using the same type of input on each device, the output is measured at V DDO /2.

©2016 Integrated Device Technology, Inc Revision B March 10, 20166 TABLE 5D. AC CHARACTERISTICS, V DD = V DDO TABLE 5E. AC CHARACTERISTICS, V DD = 2.5V ± 5%, V DDO Symbol Parameter Test Conditions Minimum Typical Maximum Units f MAX Output Frequency 250 MHz tp LH Propagation Delay, Low to High; NOTE 1 2.5 3.0 3.5 ns tp HL Propagation Delay, High to Low; NOTE 1 2.5 2.9 3.4 ns tsk(i) Input Skew; NOTE 2 60 175 ps tjit Buffer Additive Phase Jitter, RMS; refer to Additive Phase Jitter Section; NOTE 3 155.52MHz, (12kHz to 20MHz) 0.21 ps tsk(pp) Part-to-Part Skew; NOTE 2, 4 300 ps t R / t F Output Rise/Fall Time 20% to 80% 100 500 ps odc Output Duty Cycle 40 60 % MUX ISOL MUX Isolation @ 100MHz 45 dB NOTE 1: Measured from V DD /2 of the input to V DDO /2 of the output. NOTE 2: This parameter is defi ned in accordance with JEDEC Standard 65. NOTE 3: Driving only one input clock. NOTE 4: Defi ned as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using the same type of input on each device, the output is measured at V DDO /2. Symbol Parameter Test Conditions Minimum Typical Maximum Units f MAX Output Frequency 250 MHz tp LH Propagation Delay, Low to High; NOTE 1 2.6 3.3 4.0 ns tp HL Propagation Delay, High to Low; NOTE 1 2.7 3.3 4.0 ns tsk(i) Input Skew; NOTE 2 50 150 ps tjit Buffer Additive Phase Jitter, RMS; refer to Additive Phase Jitter Section; NOTE 3 155.52MHz, (12kHz to 20MHz) 0.17 ps tsk(pp) Part-to-Part Skew; NOTE 2, 4 325 ps t R / t F Output Rise/Fall Time 20% to 80% 100 700 ps odc Output Duty Cycle 40 60 % MUX ISOL MUX Isolation @ 100MHz 45 dB NOTE 1: Measured from V DD /2 of the input to V DDO /2 of the output. NOTE 2: This parameter is defi ned in accordance with JEDEC Standard 65. NOTE 3: Driving only one input clock. NOTE 4: Defi ned as skew between outputs on different devices operating a the same supply voltages and with equal load conditions. Using the same type of input on each device, the output is measured at V DDO /2.

©2016 Integrated Device Technology, Inc Revision B March 10, 20167 ADDITIVE PHASE JITTER Additive Phase Jitter @ 155.52MHz (12kHz to 20MHz) = 0.19ps typical The spectral purity in a band at a specifi c offset from the fundamental compared to the power of the fundamental is called the dBc Phase Noise. This value is normally expressed using a Phase noise plot and is most often the specifi ed plot in many applications. Phase noise is defi ned as the ratio of the noise power present in a 1Hz band at a specifi ed offset from the fundamental frequency to the power value of the fundamental. This ratio is expressed in decibels (dBm) or a ratio of the power in the 1Hz band to the power in the As with most timing specifi cations, phase noise measurements have issues. The primary issue relates to the limitations of the equipment. Often the noise fl oor of the equipment is higher than the noise fl oor of the device. This is illustrated above. The device meets the noise fundamental. When the required offset is specifi ed, the phase noise is called a dBc value, which simply means dBm at a specifi ed offset from the fundamental. By investigating jitter in the frequency domain, we get a better understanding of its effects on the desired application over the entire time record of the signal. It is mathematically possible to calculate an expected bit error rate given a phase noise plot. fl oor of what is shown, but can actually be lower. The phase noise is dependant on the input source and measurement equipment. OFFSET FROM CARRIER FREQUENCY (HZ) SSB PHASE NOISE dBc/HZ

©2016 Integrated Device Technology, Inc Revision B March 10, 20168 PARAMETER MEASUREMENT INFORMATION 3.3V CORE/2.5V OUTPUT LOAD AC TEST CIRCUIT 2.5V CORE/2.5V OUTPUT LOAD AC TEST CIRCUIT3.3V CORE/3.3V OUTPUT LOAD AC TEST CIRCUIT 3.3V CORE/1.8V OUTPUT LOAD AC TEST CIRCUIT 2.5 CORE/1.8V OUTPUT LOAD AC TEST CIRCUIT PART-TO-PART SKEW

©2016 Integrated Device Technology, Inc Revision B March 10, 20169 INPUT SKEW OUTPUT RISE/FALL TIMEPROPAGATION DELAY OUTPUT DUTY CYCLE/PULSE WIDTH/PERIOD

©2016 Integrated Device Technology, Inc Revision B March 10, 201610

APPLICATION INFORMATION

INPUTS: CLK INPUT: For applications not requiring the use of a clock input, it can be left fl oating. Though not required, but for additional protection, a 1kΩ resistor can be tied from the CLK input to ground. LVCMOS C ONTROL PINS: All control pins have internal pull-ups or pull-downs; additional resistance is not required but can be added for additional protection. A 1kΩ resistor can be used. RECOMMENDATIONS FOR UNUSED INPUT PINS

TABLE 6. θ NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.

TABLE 7. PACKAGE DIMENSIONS

TABLE 8. ORDERING INFORMATION

©2016 Integrated Device Technology, Inc Revision B March 10, 201614 REVISION HISTORY SHEET Rev Table Page Description of Change Date B T5A - T5E 4 - 6 Features Section - added Additive Phase Jitter bullet. AC Characteristics Tables - added tjit row and spec. Added Additive Phase Jitter section. 01/04/07 Updated data sheet format. 3/20/15 B note below table. Updated header and footer. 3/10/16

DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifi cations described herein at any time, without notice, at IDT's sole discretion. Performance specifi cations and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringe- ment of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expect- ed to signifi cantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. For datasheet type defi nitions and a glossary of common terms, visit www.idt.com/go/glossary. Copyright ©2016 Integrated Device Technology, Inc. All rights reserved. Corporate Headquarters

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