8205A UMW | Alldatasheet
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VDS =20V,ID =6A RDS(ON),19.5mΩ(Typ) @VGS=4.5V RDS(ON),25mΩ(Typ)@VGS =2.5V TrenchPower Technology Low RDS(ON) Low Gate Charge Optimized forFast-switchingApplications Application SynchronousRectificationin DC/DC andAC/DC Converters Isolated DC/DC ConvertersinTelecom andIndustrial PackageMarkingandOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity 8205A 8205A SOT23-6 233mm 8mm 3000 AbsoluteMaximum Ratings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 20 V Gate-SourceVoltage VGS ±10 V DrainCurrent-ContinuousNote3 TC=25℃ ID 6 A TC=70℃ 4.8 A DrainCurrent-PulsedNote1 IDM 24 A AvalancheEnergyNote4 EAS 7.4 mJ MaximumPowerDissipation TC=25℃ PD 1.5 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction-to-Case RθJC - 14.4 - ℃/W ThermalResistance,Junction-to-Ambient RθJA - 83 - ℃/W SOT23-6topview UMW R 8205A 1www.umw-ic.com 友台半导体有限公司
ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 20 - - V Zero GateVoltage DrainCurrent IDSS VDS=20V,VGS=0V - - 1 uA Gate-BodyLeakage IGSS VGS=±10V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThreshold Voltage VGS(TH) VDS=VGS,IDS=250uA 0.5 0.7 1.2 V Drain-SourceOn-State Resistance RDS(ON) VGS=4.5V,IDS=3A - 19.5 25 mΩ VGS=2.5V,IDS=3A - 25 31.5 DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=10V,VGS=0V, f=1MHz - 466 - pFOutputCapacitance COSS - 65 - ReverseTransfer Capacitance Crss - 58 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VGS=4.5V,VDs=10V, RGEN=2.5Ω ID=6A - 15 - ns RiseTime tr - 17 - Turn-OffDelayTime Td(off) - 42 - FallTime tf - 10 - TotalGate Charge at10V Qg VDS=10V,IDS=6A, VGS=10V - 5.7 - nCGateto SourceGate Charge Qgs - 0.8 - Gateto Drain“Miller”Charge Qgd - 1.4 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=6A - - 1.2 V Notes: 1:Repetitive rating, pulsewidth limited bymaximum junction temperature. 2:Surface mountedon FR4Board,t≤10sec. 3:Pulse width≤300μs,duty cycle ≤2%. 4:EAS condition: VDD=20V,VG=10V,VGATE=20V,StartTJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R 8205A UMW R 8205A
TypicalPerformanceCharacteristics www.umw-ic.com 3 友台半导体有限公司 UMW R 8205A
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