80SCLQ030 IRF | Alldatasheet
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80 Amp, 30V
Major Ratings and Characteristics Description/Features 7/11/01 CASE STYLE IR Case Style SMD-1 www.irf.com 1 Characteristics 80SCLQ030 Units IF(AV) 80 A VRRM (Per Leg) 30 V IFSM @ tp = 8.3ms half-sine (Per Leg) 200 A VF @ 40Apk, TJ =125°C 0.55 V (Per Leg) TJ, Tstg Operating and storage-55 to 150 °C ANODE COMMON ANODE CATHODE 2 13 HIGH EFFICIENCY SERIES The 80SCLQ030 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi- rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. Hermetically Sealed Center Tap Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability Surface Mount Lightweight PD -94188A
2 www.irf.com Part number 80SCLQ030 VR Max. DC Reverse Voltage (V) (Per Leg) VRWM Max. Working Peak Reverse Voltage (V) (Per Leg) Voltage Ratings Parameters Limits Units Conditions IF(AV) Max. Average Forward Current 80 A 50% duty cycle @ T C = 81°C, square waveform See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive 200 A @ tp = 8.3 ms half-sine Surge Current (Per Leg) Absolute Maximum Ratings Parameters Limits Units Conditions VFM Max. Forward Voltage Drop 0.58 V @ 20A (Per Leg) See Fig. 1/G81 0.7 V @ 40A T J = -55°C /G82
0.83 V @ 80A
0.47 V @ 20A
0.56 V @ 40A T J = 25°C /G20/G82
0.73 V @ 80A
0.42 V @ 20A
0.55 V @ 40A T J = 125°C /G82
0.82 V @ 80A
IRM Max. Reverse Leakage Current 1.5 mA T J = 25°C (Per Leg) See Fig. 2/G81 75 mA T J = 100°CV R = rated VR /G82 200 mA T J = 125°C CT Max. Junction Capacitance (Per Leg)2600 pF V R = 5VDC ( 1MHz, 25°C ) /G82 LS Typical Series Inductance (Per Leg) 5.9 nH Measured from center of cathode pad to center of anode pad Electrical Specifications /G81 Pulse Width < 300µs, Duty Cycle < 2% Parameters Limits Units Conditions TJ Max.Junction Temperature Range -55 to 150 °C Tstg Max. Storage Temperature Range -55 to 150 °C R thJC Max. Thermal Resistance, Junction 1.25 °C/W DC operation See Fig. 4 to Case (Per Leg) R thJC Max. Thermal Resistance, Junction 0.63 °C/W DC operation to Case (Per Package) wt Weight (Typical) 2.6 g Die Size (Typical) 150X180 mils Thermal-Mechanical Specifications Case Style SMD-1
www.irf.com 3 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage (Per Leg) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg) Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg) 0 10 20 30 Reverse Voltage -VR (V) 1000 10000 Junction Capacitance - C T (pF) TJ = 25°C 0 10 20 30 Reverse Voltage - VR (V) 0.01 0.1 100 1000 Reverse Current - I R ( mA ) 125°C 75°C 25°C 100°C Forward Voltage Drop - VF (V) 100 Instantaneous Forward Current - I F (A) Tj = -55°C Tj = 125°C Tj = 25°C
4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 0.01 0.1 /G20 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE) 0 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) 100 120 140 160 180 Allowable Case Temprature - ( °C) 80SCLQ030 R thJC = 0.63°C/W DC