80RIA120

80RIA IRF | Alldatasheet

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International standard case TO-209AC (TO-94) Major Ratings and Characteristics case style TO-209AC (TO-94) PHASE CONTROL THYRISTORS Stud Version 80RIA SERIES 80A Bulletin I25201 rev. B 03/03 www.irf.com

Bulletin I25201 rev. B 03/03 www.irf.com IT(AV) Max. average on-state current 80 A 180° conduction, half sine wave @ Case temperature 85 °C IT(RMS) Max. RMS on-state current 125 A DC @ 75°C case temperature ITSM Max. peak, one-cycle 1900 t = 10ms No voltage non-repetitive surge current 1990 t = 8.3ms reapplied 1600 t = 10ms 100% V RRM 1675 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 18 t = 10ms No voltage Initial T J = TJ max. 16 t = 8.3ms reapplied 12.7 t = 10ms 100% V RRM 11.7 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 180.5 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.60 V I pk= 250A, TJ = 25°C tp = 10ms sine pulse IH Maximum holding current 200 IL Typical latching current 400 0.99 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 2.29 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.84 (I > π x IT(AV)),TJ = TJ max. Parameter 80RIA Units Conditions 1.13 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s mΩ V A mA TJ = 25°C, anode supply 12V resistive load ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/VRRM, max. repetitive V RSM , maximum non- I DRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = 125°C VV m A 40 400 500 80RIA 80 800 900 15 120 1200 1300

Bulletin I25201 rev. B 03/03 www.irf.com di/dt Max. non-repetitive rate of rise T J = 125°C, Vd = rated VDRM, ITM = 2xdi/dt snubber of turned-on current 300 A/µs 0.2µF, 15Ω , Gate pulse: 20V, 65Ω , tp = 6µs, tr= 0.5µs Per JEDEC Standard RS-397, 5.2.2.6. Gate pulse: 10V, 15 Ω source, tp = 6µs, tr = 0.1µs, Vd = rated VDRM, ITM = 50Adc, TJ = 25°C. ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V, dv/dt = 20V/µs, Gate bias: 0V 25 Ω , tp = 500µs dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking Parameter 80RIA Units Conditions 15 mA T J = 125°C rated VDRM /VRRM applied PGM Maximum peak gate power 12 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 3 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required 270 T J = - 40°C to trigger 120 mA T J = 25°C

60 T J = 125°C

VGT Max. DC gate voltage required 3.5 T J = - 40°C to trigger 2.5 V T J = 25°C

1.5 T J = 125°C

IGD DC gate current not to trigger 6 mA Parameter 80RIA Units Conditions Triggering W VT J = TJ max, tp ≤ 5ms VGD DC gate voltage not to trigger 0.25 V Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 6V an- ode-to-cathode applied Parameter 80RIA Units Conditions Switching µs

500 V/µs T J = 125°C exponential to 67% rated VDRM

tq Typical turn-off time 110

Bulletin I25201 rev. B 03/03 www.irf.com 180° 0.042 0.030 120° 0.050 0.052 90° 0.064 0.070 K/W T J = T J max. 60° 0.095 0.100 30° 0.164 0.165 Ordering Information Table 1 -I TAV x 10A 2 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 - RIA = Essential part number 4 - Voltage code: Code x 10 = V RRM (See Voltage Rating Table) 5 - None = Stud base 1/2"-20UNF- 2A threads NOTE: For Metric Device M12 x 1.75 E6 Contact factory 8 0 RIA 120 Device Code TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% 15.5 (137) Non lubricated threads 14 (120) Lubricated threads wt Approximate weight 130 g Parameter 80RIA Units Conditions

0.30 DC operation

0.1 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification K/W Nm (lbf-in) Case style TO-209AC(TO-94) See Outline Table Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)

Bulletin I25201 rev. B 03/03 www.irf.com Outline Table Fast-on Terminals Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) WHITE SHRINK C.S. 0.4 mm 2 WHITE GATE RED SHRINK RED CATHODE RED SILICON RUBBER 4.3 (0.17) DIA. 21 (0.83) 10 (0.39) MAX. 157 (6.18) 170 (6.69) (.0006 s.i.) GLASS METAL SEAL 8.5 (0.3) DIA. 16.5 (0.65) MAX. 23.5 (0.92) MAX. DIA. MAX. 24 (0.94) MAX. 55 (2.17) MIN. C.S. 16mm 2 FLEXIBLE LEAD (.025 s.i.) 2.5 (0.10) MAX. 20 (0.79) MIN. 1/2"-20UNF-2A * SW 27 29.5 (1.16) MAX. 9.5 (0.37) MIN. AMP. 280000-1 REF-250 * FOR METRIC DEVICE: M12 X 1.75 E6 CONTACT FACTORY Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 1 02 03 04 05 06 07 08 09 0 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle 80RIA S eries R (DC) = 0.30 K/ WthJC 100 110 120 130 0 20 40 60 80 100 120 140 DC 30° 60° 90° 120°180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod 80RIA S eries R (DC) = 0.30 K/ WthJC

Bulletin I25201 rev. B 03/03 www.irf.com 02 5 5 0 7 5 1 0 0 1 2 5 Maximum Allowable Ambient T emperature (°C)

0.6 K/W

1 K/W

2 K/W

5 K/W

3 K/ W

1.4 K/ W

R = 0.4 K/W - Delta R thSA 100 110 120 0 10 20 30 40 50 60 70 80 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate Power Los s (W) Average On-s tate Current (A) 80R IA S eries T = 125°C J Fig. 3 - On-state Power Loss Characteristics 0 2 55 07 5 1 0 0 1 2 5 Maximum Allowable Ambient T emper atur e (°C) R = 0.4 K/W - Delta R thSA

1.4 K/W

2 K/ W

5 K/ W

0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 80RIA Series T = 125°CJ Fig. 4 - On-state Power Loss Characteristics 800 1000 1200 1400 1600 1800 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Pulses (N) Peak Half S ine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 80RIA S eries At Any R ated L oad Condition And With R ated V Applied Following S urge.RRM 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.01 0.1 1 P uls e T rain Duration (s ) Versus Pulse T rain Duration. Control Of Conduction May Not B e Maintained. P eak H alf S ine Wave On-s tate Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J 80RIA S eries Maximum Non R epeti tive S urge Cur rent Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Bulletin I25201 rev. B 03/03 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics 100 1000 10000 T = 25°CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T = 125°CJ 80R IA S eries Fig. 8 - Thermal Impedance ZthJC Characteristics 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 S quare Wave Puls e Duration (s) thJC 80RIA S eries S teady S tate Value R = 0.30 K/ W (DC Operation) T rans ient T hermal Impedance Z (K /W ) thJC Fig. 9 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 1 2 5 ° C Tj = - 4 0 ° C (1) (2) (3) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) R ectangular gate pul s e a) R ecommended load line for b) R ecommended load line for F requency L imited by P G(AV) tr<=1 µs rated di/ dt : 20V, 30ohms ; tr<=0.5 µs <=30% rated di/ dt : 20V, 65ohms (1) PGM = 100W, tp = 500µs (2) PGM = 50W, tp = 1ms (3) PGM = 20W, tp = 2.5ms (4) PGM = 10W, tp = 5ms Device: 80R IA S eries (4)

Bulletin I25201 rev. B 03/03 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.