80R650P

MMF80R650P_V01 MGCHIP | Alldatasheet

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Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 850 V RDS(on),max 0.65 Ω VTH,typ 3 V ID 8 A Qg,typ 25.8 nC Order Code Marking Temp. Range Package Packing RoHS Status MMF80R650PTH 80R650P -55 ~ 150oC TO-220F Tube Compliant MMF80R650P 800V 0.65Ω N-channel MOSFET  Description MMF80R650P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on -resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Key Parameters  Ordering Information  Applications  PFC Power Supply Stages  Switching Applications  Adapter D G S G D S  Package & Internal Circuit

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 800 V Gate – Source voltage VGSS ±30 V Continuous drain current(2) ID

8 A TC=25oC

5.05 A TC=100oC

Pulsed drain current(3) IDM 24 A Power dissipation PD 32 W Single - pulse avalanche energy EAS 340 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(5) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) ID limited by maximum junction temperature. 2) Pulse width tP limited by Tj,max 3) DC input voltage from all three leads to external heat sink 4) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.9 oC/W Thermal resistance, junction-ambient max Rthja 62.5 oC/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25 oC unless otherwise specified)

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 800 - - V VGS = 0V, ID = 0.25mA Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 0.25mA Zero Gate Voltage Drain Current IDSS - - 1 uA VDS = 800V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source On State Resistance RDS(ON) - 0.56 0.65 Ω VGS = 10V, ID = 5.1A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 823 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 689 - Reverse Transfer Capacitance Crss - 29 - Effective Output Capacitance Energy Related (6) Co(er) - 23.7 - VDS = 0V to 640V, VGS = 0V, f = 1.0MHz Turn On Delay Time td(on) - 15.2 - ns VGS = 10V, RG = 25Ω, VDS = 400V, ID = 8.0A Rise Time tr - 29.6 - Turn Off Delay Time td(off) - 76.4 - Fall Time tf - 28.0 - Total Gate Charge Qg - 25.8 - nC VGS = 10V, VDS = 640V, ID = 8.0A Gate – Source Charge Qgs - 5.0 - Gate – Drain Charge Qgd - 11.1 - Gate Resistance RG - 2.25 - Ω VGS = 0V, f = 1.0MHz 5) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25 oC unless otherwise specified)  Dynamic Characteristics (Tc=25 oC unless otherwise specified)

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 8 A Diode Forward Voltage VSD - - 1.4 V ISD = 8.0A, VGS = 0V Reverse Recovery Time trr - 354 - ns ISD = 8.0A di/dt = 100A/us VDD = 100V Reverse Recovery Charge Qrr - 3.7 - uC Reverse Recovery Current Irrm - 20.9 - A  Reverse Diode Characteristics (Tc=25 oC unless otherwise specified)

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 5  Characteristic Graph

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 6

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 7

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 8  Test Circuit

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 9  Physical Dimension TO-220F(3L) [Unit:mm] Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. Sym bol Min Nom Max A 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 C 0.33 0.63 D 15.47 16.13 E 9.60 10.71 e 2.54 F 2.34 2.84 G 6.48 6.90 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3.10 3.50 ￠R 3.00 3.55

Jul. 2021. Revision 1.2 Magnachip Semiconductor Ltd. 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.