80N85T SUNMATE | Alldatasheet
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Thermal Resistance,Junction-to-Case(Note 2) R θJC 0.88 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS GS =0V V I D =250μA 87 89 - V Zero Gate Voltage Drain Current I DSS DS =V 85V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS GS =±V 20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) DS =VV GS D =250μA 2 2.85 4 V Drain-Source On-State Resistance R DS(ON) GS =V 10V, I D =40A - 6.8 8.5 m Ω Forward Transconductance g FS DS =V 25V,I D =40A 110 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - -4400 PF Output Capacitance C oss - -340 PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 260 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - -18 nS Turn-on Rise Time t r - - nS12 Turn-Off Delay Time t d(off) -- nS56 Turn-Off Fall Time t f VDD=30V,ID=2A,RL=15Ω ,RG=2.5Ω,VGS=10V - 15 - nS Total Gate Charge Q g - -100 nC Gate-Source Charge Q gs -- 20 nC Gate-Drain Charge Q gd V DS =30V,I D =30A, V GS =10V - 30 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD GS =0V V,I S =40A - - 1.2 V Diode Forward Current (Note 2) I S - - 80 A Reverse Recovery Time t rr - 36 nS Reverse Recovery Charge Qrr Tj=25℃,I F =75A,di/dt=100A/μs (Note3) - 56 nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,V DD =40V,V G =10V,L=0.5mH,Rg=25Ω
Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform V DD BV DSS I AS I D(t) V DS(t) Unclamped Inductive Switching Test Circuit t p Time Unclamped Inductive Switching Waveforms