80N08 UTC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-468.a N-CHANNEL 80V (D-S) MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology * 100 % RG and UIS Tested SYMBOL G( 1 ) D (2) S (3) ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 80N08L-TA3-R 80N08G-TA3-R TO-220 G D S Tube Note: G: GND, D: Drain, S: Source
80N08 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-468.a ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT TC=25 °C, VGS=10 V 80 Continuous Drain Current (Note 1) I D TC=100 °C, VGS=10 V (Note 2) 80 A Pulsed Drain Current (Note 2) I D,pulse T C=25 °C 320 A Avalanche Energy, Single Pulse (Note 2) E AS I D=80A 810 mJ Gate Source Voltage (Note 3) V GS ±20 V Power Dissipation P TOT T C=25 °C 300 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 K/W Junction to Case θJC 0.5 K/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=1mA, VGS=0V 80 V VDS=75V, VGS=0V, TJ=25°C 0.01 1 Drain-Source Leakage Current I DSS VDS=75V, VGS=0V, TJ=125°C 2 1 100 µA Gate-Source Leakage Current I GSS V DS=0V, VGS=20V 1 100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.1 3.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=80A 12 m Ω DYNAMIC PARAMETERS (Note 2) Input Capacitance C ISS 4700 pF Output Capacitance C OSS 1260 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 580 pF SWITCHING PARAMETERS (Note 2) Gate to Source Charge Q GS 25 37 nC Gate to Drain Charge Q GD 69 116 nC Total Gate Charge Q G VDD=60V, VGS=0~10V, ID=80A 144 180 nC Gate Plateau Voltage V plateau 5.4 V Turn-ON Delay Time t D(ON) 26 ns Rise Time t R 50 ns Turn-OFF Delay Time t D(OFF) 61 ns Fall-Time t F VDD=40V, RG=2.2Ω ID=80A, VGS=10V 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 80 Pulsed Current I S, pulse TC=25°C (Note 2) 320 A Drain-Source Diode Forward Voltage (Note1) VSD I F=80A, VGS=0V, TJ=25°C 0.9 1.3 V Reverse Recovery Time (Note 2) t RR 110 140 ns Reverse Recovery Charge (Note 2) Q RR IF= IS, dIF/dt=100A/µs VR=40V 470 590 nC Note: 1. Current is limited by bondwire; with an θJC= 0.5K/W the chip is able to carry 132A at 25°C. 2. Defined by design. Not subject to production test. 3. Qualified at -20V and +20V.
80N08 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-468.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.