80N055

NP80N055 NEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14097EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark #### shows major revised points. © 1999,2000 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

DESCRIPTION

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Channel temperature 175 degree rated
• Super low on-state resistance R DS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) R DS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2900 pF TYP.
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage V DSS 55 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) Note1 ID(DC) ±80 A Drain Current (Pulse) Note2 ID(pulse) ±200 A Total Power Dissipation (TA = 25 °C) P T 1.8 W Total Power Dissipation (TC = 25 °C) P T 120 W Single Avalanche Current Note3 IAS 45 / 30 / 10 A Single Avalanche Energy Note3 EAS 2.0 / 90 / 100 mJ Channel Temperature T ch 175 °C Storage Temperature T stg –55 to +175 °C Notes 1.Calculated constant current according to MAX. allowable channel temperature. 2.PW ≤ 10 µs, Duty cycle ≤ 1 % 3.Starting Tch = 25 °C, RG = 25 Ω , VGS = 20 V→ 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case R th(ch-C) 1.25 °C/W Channel to Ambient R th(ch-A) 83.3 °C/W

ORDERING INFORMATION

(TO-220AB) (TO-262) (TO-263)

NP80N055CLE, NP80N055DLE, NP80N055ELE ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 40 A 8.4 11 m Ω R DS(on)2 VGS = 5 V, ID = 40 A 10.3 13 m Ω R DS(on)3 VGS = 4.5 V, ID = 40 A 11.3 15 m Ω Gate to Source Threshold Voltage V GS(th) VDS = VGS , ID = 250 µA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 40 A 20 40 S Drain Leakage Current I DSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 25 V, VGS = 0 V, f = 1 MHz 2900 4400 pF Output Capacitance C oss 380 570 pF Reverse Transfer Capacitance C rss 170 310 pF Turn-on Delay Time t d(on) ID = 40 A, VGS(on) = 10 V, VDD = 28 V, 22 48 ns Rise Time t r R G = 1 Ω 10 25 ns Turn-off Delay Time t d(off) 62 120 ns Fall Time t f 11 27 ns Total Gate Charge 1 Q G1 ID = 80 A, VDD = 44 V, VGS = 10 V 50 75 nC Total Gate Charge 2 Q G2 ID = 80 A, VDD = 44 V, VGS = 5 V 26 39 nC Gate to Source Charge Q GS 12 nC Gate to Drain Charge Q GD 15 nC Body Diode Forward Voltage V F(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time t rr IF = 80 A, VGS = 0 V, di/dt = 100 A/µs5 0 n s Reverse Recovery Charge Q rr 100 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS(on) VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet D14097EJ3V0DS 3 NP80N055CLE, NP80N055DLE, NP80N055ELE TYPICAL CHARACTERISTICS (T A = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 0 25 50 75 100 125 150 175 200 100 TC - Case Temperature - ˚C Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 200 140 120 100 0.1 0.1 100 1000 1 10 100 Figure3. FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A ID(pulse) ID(DC) PW = 10 µs DC 100 µs1 m sRDS(on) Limited (at V GS = 10 V) Power Dissipation Limited TC = 25˚C Single Pulse Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C EAS - Single Avalanche Energy - mJ 25 50 75 100 125 150 175 120 100 IAS = 10 A 30 A 45 A 90 mJ 100 mJ 2 mJ Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C /W 0.01 0.1 100 1000 1 m 10 m 100 m 1 10 100 1000 Single Pulse R th(ch-A) = 83.3˚C /W 10 100 R th(ch-C) = 1.25˚C /W µ µ ####

NP80N055CLE, NP80N055DLE, NP80N055ELE Figure6. FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A Pulsed 1234 5 6 0.1 0.01 100 TA = −50˚C 25˚C 75˚C 150˚C 175˚C Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V ID - Drain Current - A 200 160 120 0 2 Pulsed VGS =10 V 0 531 5 V 4.5 V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S VDS =10V Pulsed 0.01 0.1 1 100 10 100 0.01 0.1 TA = 175˚C 75˚C 25˚C −50˚C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ 00 624 8 1 0 1 2 1 4 1 6 1 8 Pulsed ID = 40 A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 101 100 1000 Pulsed VGS = 4.5 V 5 V 10 V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - ˚C VGS(th) - Gate to Source Threshold Voltage - V 0.5 VDS = VGS ID = 250 A 1.0 1.5 2.0 2.5 3.0 −50 0 50 100 150 µ ####

Data Sheet D14097EJ3V0DS 5 NP80N055CLE, NP80N055DLE, NP80N055ELE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ −50 0 50 100 150 ID = 40 A 10 V 5 V VGS = 4.5 V Pulsed Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 ISD - Diode Forward Current - A 0 1.5 VSD - Source to Drain Voltage - V 0.5 Pulsed 0.1 100 1000 VGS = 0 V VGS = 10 V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz C oss C rss C iss Figure15. SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 10.1 100 1000 10 100 tf tr td(on) td(off) Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 V 0.1 1 10 100 1000 100 µ Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 10 20 40 60 VDD = 44 V 28 V 11 V V DS 03 0 5 0 ID = 80 A 70 80 VGS

NP80N055CLE, NP80N055DLE, NP80N055ELE PACKAGE DRAWINGS (Unit: mm) (10.0) 1.4±0.2 1.0±0.5 2.54 TYP. 2.54 TYP. 8.5±0.2 123 5.7±0.4 2.8±0.2 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 10.6 MAX. 10.0 3.6±0.2 4 3.0±0.3 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 φ 1) TO-220AB (MP-25) 3) TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 (10) 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.212.7 MIN. 1.3±0.2 0.5±0.2 2.8±0.2 1.0±0.5 2) TO-262 (MP-25 Fin Cut) Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D14097EJ3V0DS 7 NP80N055CLE, NP80N055DLE, NP80N055ELE [MEMO]

NP80N055CLE, NP80N055DLE, NP80N055ELE M8E 00. 4 The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).