7M0680

FS7M0680 FAIRCHILD | Alldatasheet

Document overview

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• PDF pages: 16

Technical content

Features

• Precise Fixed Operating Frequency
• FS7M0680(66kHz)
• Pulse By Pulse Current Limiting
• Over Current Protection
• Over Load Protection
• Over V oltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under V oltage Lockout with Hysteresis
• Internal High V oltage Sense FET
• Latch Up Mode
• Soft Start

Description

The Fairchild Power Switch (FPS) product family is specially designed for an off line SMPS with minimal external compo- nents. The Fairchild Power Switch (FPS) consists of high volt- age power SenseFET and current mode PWM controller. The PWM controller includes integrated fixed oscillator, under volt- age lock out, leading edge blanking block, optimized gate turn- on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precise current sources for loop compensation and fault protection circuit. Compared to discrete MOSFET and PWM controller or ring choke converter (RCC) solutions, the Fairchild Power Switch (FPS) can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity, and system reliability. It has simple applications well suited for cost down design for flyback converter or forward converter. TO-3P-5L Internal Block Diagram Feedback Thermal Shutdown Vref R Vcc Reset DRAIN Source GND Vcc Soft Start OSC UVLO Internal Vias Roff Vocp Rsense Delay 120ns QS R S R Q Vfb offset PWM Comparator Vref Vref Idelay Ifb Vovp Vcc Vsd 3R Ron FS7M0680 Fairchild Power Switch(FPS)

Note: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 24mH, VDD = 50V, RG = 25Ω, starting Tj =25°C 4. L = 13µH, starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,MAX 800 V Drain-Gate Voltage (RGS=1MΩ)V DGR 800 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (2) IDM 24.0 A DC Single Pulsed Avalanche Energy (3) EAS 455 mJ Avalanche Current (4) IAS 20 A Continuous Drain Current (TC=25°C) I D 6.0 A DC Continuous Drain Current (TC=100°C) I D 3.8 A DC Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 150 W Derating 1.21 W/ °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature T STG -55 to +150 °C

Electrical Characteristics (SenseFET part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 800 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V -- 5 0 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source On Resistance (note1) RDS(ON) VGS=10V, ID=5.0A - 1.6 2.0 Ω Forward Transconductance (note1) gfs V DS=15V, ID=5.0A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1600 - pFOutput Capacitance Coss - 140 - Reverse Transfer Capacitance Crss - 42 - Turn On Delay Time td(on) V DD=0.5BVDSS, ID=8.0A (MOSFET switching time are essentially independent of operating temperature) -6 0- nS Rise Time tr - 150 - Turn Off Delay Time td(off) - 300 - Fall Time tf - 130 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=8.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -7 0- nCGate-Source Charge Qgs - 16 - Gate-Drain (Miller) Charge Qgd - 27 - S 1 R----=

Electrical Characteristics (control part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START - 14 15 16 V Stop Threshold Voltage V STOP After turn on 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC - 6 06 67 2k H z Frequency Change With Temperature (2) ∆F/∆T- 2 5 °C ≤ Ta ≤ +85°C- ±5 ±10 % Maximum Duty Cycle Dmax - 45 50 55 % Voltage Stability Fstable 12V ≤ Vcc ≤ 23V 0 1 3 % FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Delay Current Idelay Ta=25 °C, 5V ≤ Vfb ≤ VSD 4.0 5.0 6.0 µA Shutdown Feedback Voltage Vsd 6.9 7.5 8.1 V SOFT START SECTION Soft Start Voltage V SS VFB =2V 4.7 5.0 5.3 V Soft Start Resistor Rsoft Bias=Vref, SS=0V 16.0 18.5 22.0 k Ω REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C ≤ Ta ≤ +85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT (SELT-PROTECTION)SECTION Peak Current Limit I OVER Max. inductor current 3.52 4.00 4.48 A PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) TSD - 140 - - °C Over Voltage Protection Voltage V OVP - 25 28 31 V Over Current Protection Voltage V OCP - 1.05 1.10 1.15 V TOTAL DEVICE SECTION Start Up Current I START VCC=14V - 40 80 uA Operating Supply Current (Control Part Only) IOP Ta=25°C- 8 1 2 m A Iop(lat) After latch, Vcc=Vstop-0.1V 150 250 350 uA

the undesired activation of OVP. is applied to the latch, resulting in the shutdown of SMPS. the time required for the operation of the protection circuit. to increase slowly, also increasing the duty ratio slowly. Figure 5. Soft Start Circuit

1. Application Note using the FPS -Flyback Application (70W) Transformer Specification 2. Winding Specification 3. Electical Characteristic 4. Core & Bobbin CORE : EER 2834 BOBBIN : EER2834 No. PIN(S → F) WIRE TURNS WINDING METHOD NP/2 2 → 4 0.35 φ × 1 23 SOLENOID WINDING INSULATION : POLYESTER TAPE t = 0.050mm, 1Layer NB 1 → 30 . 3 φ × 11 0 C O P P E R W I N D I N G INSULATION : POLYESTER TAPE t = 0.050mm, 3Layer N5V 8 → 9 0.45 φ × 4 3 SOLENOID WINDING INSULATION : POLYESTER TAPE t = 0.050mm, 1Layer N12V 12 → 10 0.3 φ × 47 INSULATION : POLYESTER TAPE t = 0.050mm, 1Layer NP/2 4 → 50 . 4 φ × 1 23 SOLENOID WINDING OUTER INSULATION : POLYESTER TAPE t = 0.050mm, 3Layer CLOSURE PIN SPEC. REMARKS INDUCTANCE 2 - 5 700uH ±10% 1kHz, 1V LEAKAGE L 2 - 5 15uH MAX. 2nd ALL SHORT 10 u H 1000uF/ 35 V 1000uF /25V 12V / 4A DC OUTPUT Drain GND FB Vcc FS7M0680R PRIMARY GND HOT FUSE 0.1uF/275V AC 13mH 150 uF /400V 700K /1W 3.3nF/630V 47k UF4007 D10LC20U BD1 1uF /50V 5D-9 /NTC 2.2 nF 47uF /50V 22nF /Film UF4004 10 Opto 1. 5 K 0.1 uF/ mono lithic OPTO KA431 2. 2 K 2. 2 K 500 10uH 1000uF/

16 V 1000uF

/10V 5V / 4A DC OUTPUT D10SC4M 2.2nF 2.2nF S/S

-Forward Application (180W) Transformer Specification 2. Winding Specification 3. Electical Characteristic 4. Secondary Inductor(L2) Specipication Core : Power Core 27 φ 16 Grade 5V : 12T (1 φ × 2) 10V : 27T (1.2 φ × 1) No. PIN(S → F) WIRE TURNS WINDING METHOD NP/2 1 → 3 0.65 φ × 1 50T SOLENOID WINDING N+5V 8, 9 → 10, 11, 12 14mm × 1 4T COPPER WINDING N+12V 13, 14 → 9 0.65 φ × 4 5T SOLENOID WINDING NP/2 1 → 3 0.65 φ × 1 50T SOLENOID WINDING NVCC 7 → 6 0.65 φ × 1 6T SOLENOID WINDING CLOSURE PIN INDUCTANCE 1 - 3 LEAKAGE L 1 - 3 Vcc Drain GN D S.S. F.B. SPS NTC FUSE 0.47uF /275V Line Inductor 472 /275V 220 kΩ /1W 470uF /200V 223 /630V 56KΩ /2W UF4007 UF4007 33kΩ /0.5W UF4004 10Ω 33uF /35V 1uF /50V 123 UF4007 S30SC4M Line Inductor 2200uF 2200uF + 12V / 10A + 5V / 26A 3300uF 1000uF 2.2kΩ 2.2kΩ 1kΩ 820ΩQ817 KA431 104 Q817 103 103 T13,14 T10,11, 12 T8,9 333 5.6kΩ 102 10Ω 472 /275V 33kΩ /0.5W 220 kΩ /1W 470uF /200V 56KΩ /2W 12V/8A 5V/15A

Package Dimensions (Continued) TO-3P-5L (Forming)

Ordering Information

TU : Non Forming Type YDTU : Forming type Product Number Package Rating Fosc FS7M0680TU TO-3P-5L 800V, 6A 67kHz FS7M0680YDTU TO-3P-5L(Forming)

11/17/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.