KHB7D0N65P1_07 KEC | Alldatasheet

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  1. 5. 10 1/7 SEMICONDUCTOR TECHNICAL DATA KHB7D0N65P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES

VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC MAXIMUM RATING (Tc=25 * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F2 Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Drain Current @TC=25 ID 7 7* A@TC=100 4.2 4.2* Pulsed (Note1) IDP 28 28* Single Pulsed Avalanche Energy (Note 2) EAS 212 mJ Repetitive Avalanche Energy (Note 1) EAR 1.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 PD 160 52 W Derate above 25 1.28 0.42 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 Thermal Resistance, Case-to-Sink RthCS 0.5 - Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1+_ 2.8 0.1+_ 2.54 0.2+_ 1.27 0.1+_ 1.4 0.1+_ 13.08 0.3+_ 3.6 0.2+_ +_9.9 0.2 +_9.2 0.2 +_4.5 0.2 +_2.4 0.2

15.95 MAX

1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C HNN Q D Q P P1. GATE 2. DRAIN 3. SOURCE 123 TO-220IS (1) A A B B C C D D E E F F G G H H

1.47 MAX

13.0 MAXJ

J K K L M L N NN O O Q R Q R 123 M DIM MILLIMETERS 10.16 0.2+_ 15.87 0.2+_ 2.54 0.2+_ 0.8 0.1+_ 3.18 0.1+_ 0.5 0.1+_ 3.23 0.1+_ 2.54 0.2+_ 4.7 0.2+_ 6.68 0.2+_ 2.76 0.2+_ 3.3 0.1+_ 12.57 0.2+_ 1. GATE 2. DRAIN 3. SOURCE G D S PIN CONNECTION DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 1. GATE 2. DRAIN 3. SOURCE 10.0 0.3+_ 15.0 0.3+_ 2.70 0.3+_ Φ3.2 0.2+_ 3.0 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ 2.54 0.1+_ 6.8 0.1+_ 4.5 0.2+_ 2.6 0.2+_ KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F2

  1. 5. 10 2/7 KHB7D0N65P1/F1/F2 Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/ Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 1.2 1.4 Dynamic Total Gate Charge Qg VDS=520V, ID=7.0A VGS=10V (Note4,5) - 32 40 nCGate-Source Charge Qgs - 5.4 - Gate-Drain Charge Qgd - 12.6 - Turn-on Delay time td(on) VDD=325V RL=46 RG=25 (Note4,5) - 20 45 ns Turn-on Rise time tr - 40 90 Turn-off Delay time td(off) - 125 260 Turn-off Fall time tf - 80 170 Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1310 1700 pFOutput Capacitance Coss - 113 147 Reverse Transfer Capacitance Crss - 11.4 14.8 Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 7 A Pulsed Source Current ISP - - 28 Diode Forward Voltage VSD IS=7.0A, VGS=0V - - 1.5 V Reverse Recovery Time trr IS=7.0A, VGS=0V, dIs/dt=100A/ s - 410 - ns Reverse Recovery Charge Qrr - 4 - C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%. Note 5) Essentially independent of operating temperature.
  1. 5. 10 3/7 KHB7D0N65P1/F1/F2 Revision No : 0 Normalized Breakdown Voltage BVDSS Gate - Source Voltage VGS (V) Fig1. ID - VDS Drain - Source Voltage VDS (V) Drain Current ID (A) 100 10110-1 100 101 100 10-1 101 6841 02 Fig2. ID - VGS Fig3. BVDSS - Tj Fig4. RDS(ON) - ID -100 -50 0.8 0.9 1.2 1.1 1.0 05 0 100 150 Drain Current ID (A) Drain Current ID (A)On - Resistance RDS(ON) (Ω) Fig5. IS - VSD Reverse Drain Current IS (A) 3.0 2.5 1.5 1.0 2.0 01 0 51 5 Junction Temperature Tj ( )C Source - Drain Voltage VSD (V) VG = 10V VG = 20V 100 10-1 101 Fig6. RDS(ON) - Tj Junction Temperature Tj ( ) 0 50-100 -50 100 150 Normalized On Resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 C VGS =10V IDS = 3.75A VGS = 0V IDS = 250 150 C

25 C -55 C

25 C150 C

TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V

  1. 5. 10 4/7 KHB7D0N65P1/F1/F2 Revision No : 0 Drain Current ID (A) Gate - Charge Qg (nC) Fig7. C - VDS Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) 28 32124 2016 2480 Fig8. Qg- VGS Fig9. Safe Operation Area Capacitance (pF) Gate - Source Voltage VGS (V) 500 1500 2000 4500 1000 2500 3500 3000 4000 10-1 100 101 101 101 10-1 100 100102 102 103 Frequency = 1MHz Drain Current ID (A) Drain - Source Voltage VDS (V) Fig10. Safe Operation Area 101 101 10-1 100 10010-2 102 103 75 15012550 10025 Drain Current ID (A) (KHB7D0N65P1) (KHB7D0N65F1, KHB7D0N65F2) ID=7A Operation in this area is limited by RDS(ON) CJunction Temperature Tj ( ) Fig11. ID - Tj Operation in this area is limited by RDS(ON) VDS = 520V VDS = 325V VDS = 130V Coss Ciss Crss Tc= 25 Tj = 150 Single nonrepetitive pulse C C Tc= 25 Tj = 150 Single nonrepetitive pulse C C DC 10 µs 10 ms 1ms 100µs DC 10ms 1ms 100µs 100ms
  1. 5. 10 5/7 KHB7D0N65P1/F1/F2 Revision No : 0 TIME (sec) 10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 0.02 0.2 0.01 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance - Duty Factor, D= t1/t2 PDM Duty=0.5 Single Pulse 0.05 TIME (sec) 10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 0.2 0.01 Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance Duty=0.5 Single Pulse 0.05 0.1 0.02 0.1 - Duty Factor, D= t1/t2 PDM
  1. 5. 10 6/7 KHB7D0N65P1/F1/F2 Revision No : 0 Fig14. Gate Charge ID ID VDS VGS VGS VDS VGS 1.0 mA Fast Recovery Diode 10V 10 V 25 Ω RL Qg QgdQgs Q tp Fig16. Resistive Load Switching Fig15. Single Pulsed Avalanche Energy VDS(t) ID(t)VDS VGS10 V 25Ω L Time EAS= LIAS2 BVDSS - VDD BVDSS1 VDD IAS BVDSS VDS VGS tr td(off) toff td(on) ton tf 10% 90% 50V 50V

0.8 VDSS

  1. 5. 10 7/7 KHB7D0N65P1/F1/F2 Revision No : 0 Fig17. Source - Drain Diode Reverse Recovery and dv /dt IF IS VDS VSD ISD (DUT) VDS (DUT) VGS10V driver DUT Body Diode Recovery dv/dt Body Diode Forword Voltage drop Body Diode Forword Current Body Diode Reverse Current di/dt VDD IRM