7721-1A BITECH | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • Saves significant space and assembly time
  • Modern design reduces heatsink cost
  • Low cost
  • Thin package (.200) easily fits between PCB and heatsink
  • Internal temperature sensing for fastest possible response
  • Replaces 8 each TO-220 or TO-247 discrete power semiconductors
  • Custom designs accept any IGBTs or FETs up to size 5 with parallel diodes
  • Custom module versions available for specific applications Example: 3 phase motor drives & rectifier bridges, power servo amplifiers, solenoid drivers, solid state relays, audio amplifiers, and high-power DC/DC converters. NEW PRODUCT MODEL 7721 SERIES H Bridge Power Module FEATURES AND BENEFITS 7721-1A 22A 500V IGBTs with 8A 600V ultrafast diodes 7721-2A 32A 600V IGBTs with 25A 600V hyperfast diodes MODELS/RANGE Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. Specifications subject to change without notice.

Parameter Symbol Conditions 1 Min. Typ. Max. Units Q1-Q4 IGBT Continuous Collector Current I C TC = 25°C 40 A TC = 100°C 22 A Pulsed Collector Current I CM 80 A Reverse Avalanche Energy E AVR 15 mJ Collector Leakage Current I CES VGE = 0V, VCE = 500V 250 µA Saturation Voltage V CE(ON) IC = 22A, VGE = 15V 2.4 3.0 V IC = 40A, VGE = 15V 2.8 V Gate Threshold Voltage V GE(TH) VCE = VGE, IC = 250µA 3.0 5.5 V Gate Leakage Current I GES VGE = ±20V ±100 nA Total Gate Charge (turn on) Q g IC = 22A, VCC = 400V,VGE = 15V 55 83 nC Gate Emitter Charge (turn on) Q ge IC = 22A, VCC = 400V,VGE = 15V 11 17 nC Gate Collector Charge (turn on) Q gc IC = 22A, VCC = 400V,VGE = 15V 19 29 nC Turn Off Delay Time td (off) IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail 100 150 ns Fall Time tf I C = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail 56 100 ns Total Switching Loss Ets I C = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail .55 .70 mJ Input Capacitance Cies V GE = 0V, VCC = 30V, f = 1MHz 1400 pF Output Capacitance Coes V GE = 0V, VCC = 30V, f = 1MHz 250 pF Reverse Transfer Capacitance Cres V GE = 0V, VCC = 30V, f = 1MHz 42 pF Junction Temperature T J 150 °C Thermal Resistance R thjc .94 °C/W D1-D4 Fred Diodes Reverse Leakage Current I R VR = 600V 20 µA VR = .8x600V, TJ = 125°C 1.5 mA Forward Voltage V F IF = 8A 1.5 V IF = 8A, TJ = 150°C 1.3 V Reverse Recovery Time trr I F = 1A, -di/dt = 50A/µs, VR = 30V 35 50 ns Junction Temperature T j 150 °C Thermal Resistance R thjc 3.1 °C/W TH1 NTC Thermistor Resistance R 25 I = 1mA 22.5 25 27.5 K Ω Resistance Ratio R T/R25 t = 80°C .126 t = 90°C .0916 t = 100°C .0679 t = 110°C .0511 Dissipation Constant P D 1.0 mW/°C Thermal Time Constant t 10 sec ELECTRICAL CHARACTERISTICS (7721-1A) 1 - TCase = 25°C unless otherwise specified.

Parameter Symbol Conditions 1 Min. Typ. Max. Units Q1-Q4 IGBT Continuous Collector Current I C TC = 25°C 60 A TC = 90°C 32 A Pulsed Collector Current I CM 120 A Collector Leakage Current I CES VGE = 0V, = .8x600V 200 µA VGE = 0V, VCE = .8x600V,TJ = 125°C 1 mA Saturation Voltage V CE(ON) IC = 32A, VGE = 15V 2.5 V Gate Threshold Voltage V GE(TH) VCE = VGE, IC = 250µA 2.5 5.0 V Gate Leakage Current I GES VGE = ±20V ±100 nA Total Gate Charge (turn on) Q g IC = 32A, VCC = 300V,VGE = 15V 125 150 nC Gate Emitter Charge (turn on) Q ge IC = 32A, VCC = 300V,VGE = 15V 23 35 nC Gate Collector Charge (turn on) Q gc IC = 32A, VCC = 300V,VGE = 15V 50 75 nC Turn Off Delay Time td (off) IC = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω 100 200 ns Fall Time tf I C = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω 80 150 ns Total Switching Loss Ets I C = 32A, VCC = 400V,VGE = 15V,RG = 4.7Ω .8 1.6 mJ Input Capacitance Cies V GE = 0V, VCC = 25V, f = 1MHz 2500 pF Output Capacitance Coes V GE = 0V, VCC = 25V, f = 1MHz 230 pF Reverse Transfer Capacitance Cres V GE = 0V, VCC = 25V, f = 1MHz 70 pF Junction Temperature T J 150 °C Thermal Resistance R thjc .60 °C/W D1-D4 Fred Diodes Reverse Leakage Current I R VR = 600V 1 500 µA VR = .600V, TJ =150°C .3 1.5 mA Forward Voltage V F IF = 25A 1.5 2.8 V IF = 25A, TJ =150°C 1.3 2.5 V Reverse Recovery Time trr I F = 1A, -di/dt = 100A/µs 30 40 ns Junction Temperature T j 175 °C Thermal Resistance R thjc 1.2 °C/W TH1 NTC Thermistor Resistance R 25 I =1mA 22.5 25 27.5 K Ω Resistance Ratio R T/R25 t = 80°C .126 t = 90°C .0916 t = 100°C .0679 t = 110°C .0511 Dissipation Constant P D 1.0 mW/°C Thermal Time Constant t 10 sec ELECTRICAL CHARACTERISTICS (7721-2A) 1 - TCase = 25°C unless otherwise specified.

Power Level: -1A = 500V, 22A, IGBT -2A = 600V, 32A, IGBT Circuit Function: 1 = H Bridge

ORDERING INFORMATION

1.800 2.230 Max. .950 1.100±.015 (CL to CL) .290±.015 Date CodeLot No. 7721-1A.200 1.380 Max. Pin #1 Pin .020 x .050

16 PlacesMarking Surface

4x R.215 4x Ø .280 x .060 Deep 4x Ø .150 Thru .300±.010 4 x .100 10 x .200 OUTLINE DIMENSIONS (Inch)