75N75 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET w w w . u n i s o n i c . c o m . t w 1 of 8 Copyright © 2005 Unisonic Technologies Co., Ltd. QW-R502-097,A 75Amps, 75Volts N-CHANNEL POWER MOSTFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resi stance, usually used at telecom and computer application. FEATURES * RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-252 TO- 2511 TO-220F *Pb-free plating product number: 75N75L ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 75N75-TA3-T 75N75L-TA3-T TO-220 G D S Tube 75N75-TF3-T 75N75L-TF3-T TO-220F G D S Tube 75N75-TM3-T 75N75L-TM3-T TO-251 G D S Tube 75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel 75N75-TN3-T 75N75L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 75N75L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating , Blank: Pb/Sn
UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-097,A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 75 V TC = 25Ċ 75 A Continuous Drain Current TC = 100Ċ ID 56 A Drain Current Pulsed (Note 1) I DM 300 A Gate to Source Voltage V GS 20 V Single Pulsed(Note 2) E AS 900 mJ Avalanche Energy Repetitive (Note 1) E AR 300 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25Ċ 220 W Total Power Dissipation Derating above 25Ċ PD 1.4 W/ Ċ Junction Temperature T J +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance Junction-Ambient θJA 62.5 Ċ/W Thermal Resistance Junction-Case θJC 0.8 Ċ/W Thermal Resistance Case-Sink θCS 0.5 Ċ/W ELECTRICAL CHARACTERISTICS (TC = 25Ċ, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 75 V Breakdown Voltage Temperature Coefficient BV¶ DSS/¶TJ ID = 1mA, Referenced to 25Ċ 0.08 V/ Ċ VDS = 75 V, VGS = 0 V 20 µA Drain-Source Leakage Current I DSS VDS = 75 V, VGS = 0 V, TJ = 150Ċ 250 µA Gate-Source Leakage Current V GS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Reverse IGSS VGS = -20V, VDS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) V GS = 10 V, ID = 48 A 12.5 15 m Ω Dynamic Characteristics Input Capacitance C ISS 3300 pF Output Capacitance C OSS 530 pF Reverse Transfer Capacitance C RSS VGS = 0 V, VDS = 25 V f = 1MHz 80 pF Switching Characteristics Turn-On Delay Time t D(ON) 12 ns Rise Time t R 79 ns Turn-Off Delay Time t D(OFF) 80 ns Fall Time t F VDD = 38V, ID =48A, VGS=10V, (Note 4, 5) 52 ns Total Gate Charge Q G 90 140 nC Gate-Source Charge Q GS 20 35 nC Gate-Drain Charge (Miller Charge) Q GD VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5) 30 45 nC
UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-097,A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Continuous Source Current I S 75 Pulsed Source Current I SM 300 A Diode Forward Voltage V SD I S = 48A, VGS = 0 V 1.4 V Reverse Recovery Time t rr 90 ns Reverse Recovery Charge Q rr IS = 48A, VGS = 0 V dIF / dt = 100 A/µs 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25Ċ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25Ċ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-097,A TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv /dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-097,A TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON ) tR tD(OFF ) tFPulse Width≤ 1DŽs Duty Factor≤0.1 % Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kȤ 0.3DŽF DUT VDS Same Type as D.U.T. 10V0.2DŽF 12V Charge QGS QGD QG VGS 1mA VG F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp IAS tp Time BVDSS Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-097,A TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain -Source Voltage , VDS (V) Drain Current, ID (A) On-State Characteristics 102 101 100 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 468 1 035 79 VGS Top: 15V 10 V 8 V 7 V 6 V 5 .5V Bottorm : 4.5V 4.5V Note: 1. VDS=25V 2. 20µs Pulse Test 150¥ 25¥ Drain-Source On-Resistance, RDS(ON) (mȤ) Drain Current , ID (A) 30 70 80 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage , VSD (V) Reverse Drain Current, ISD (A) Reverse Drain Current vs . Allowable Case Temperature *Note: 1. VGS=0V 2. 250µs Test 25¥ 150¥ VGS=10V 20 40 60 90 4000 Drain-Source Voltage , VDC (V) Capacitance (pF) Capacitance Characteristics (Non-Repetitive ) 1000 2000 10 0 Gate-to-Source Voltage, VGS (V) Total Gate Charge, QG (nC) 5 15 20 25 Gate Charge Characteristics 6000 CISS COSS 3000 5000 15 20 30 35 *Note: 1. VGS=0V 2.f = 1MHzCRSS 30 35 40 45 VDS=60V VDS=38V *Note: ID=48A CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD
UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-097,A TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS(Normalized) Junction Temperature , TJ (¥) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, RDS(ON), (Normalized) -100 50 100 150 3.0 On-Resistance Variation vs . Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature , TJ (¥) *Note: 1. VGS=10V 2. ID=3.5A -50 200 0.1 Drain -Source Voltage, VD (V) Drain Current , ID,(A) Maximum Safe Operating 100 Drain Current, ID (A) Case Temperature, TC (¥) 75 100 150 Maximum Drain Current vs . Case Temperature 1255025 10 100 1000 DC Operation in This Area by RDS(ON) *Note: 1. Tc=25¥ 2. TJ=150¥ 3. Single Pulse 10ms 1ms 100µs 0.01 Square Wave Pulse Duration , t1 (sec) Thermal Response, ZȬJC (t) 11E-5 0.1 0.1 10 0.01 Transient Thermal Response Curve 0.02 0.1 0.2 1E-4 1E-3 0.01 *Note: 1. ZȬJC (t) = 0.88¥/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC=PDM×ZȬJC (t ) Single pulse D=0.5 0.05
UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-097,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.