75N08 CHONGQING | Alldatasheet
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- 页码 - Rev. 14-1 http:// www.perfectway.cn 75N08(F,B,H) 75A mps,80 Volts N-CHANNEL MOSFET FEATURE 75A,80V,RDS(ON)=17mΩ@VGS=10V/35A Lowgatecharge LowCiss Fastswitching 100%avalanchetested Improveddv/dtcapability TO-220AB ITO-220AB 75N08 75N08F TO-263 TO-262 75N08B 75N08H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 75N08 UNIT Drain-SourceVoltage VDSS 80 V Gate-SourceVoltage VGSS ±20 ContinuousDrainCurrent ID 75 A PulsedDrainCurrent(Note1) IDM 300 SinglePulseAvalancheEnergy(Note2) EAS 1550 mJ AvalancheCurrent(Note1) IAR 70 A RepetitiveAvalancheEnergy(Note1) EAR 15.5 mJ ReverseDiodedV/dt(Note3) dv/dt 7.0 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in
1.1 N·m
Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 1.6 0.8 0.8 ℃/W MaximumPowerDissipation TC=25℃ PD 78 156 156 W
- 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 80 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.08 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=80V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=20V,VDS=0V － － 100 nA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-20V,VDS=0V － － -100 nA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=10V,ID=250uA 2.0 － 4.0 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=35A － － 17 mΩ Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － 2100 2700 pF OutputCapacitance Coss － 790 1030 pF ReverseTransferCapacitance Crss － 180 230 pF Switching Characteristics Turn-OnDelayTime td(on) VDD=40V,ID=75A, RG=25Ω (Note4,5) － 25 60 ns Turn-OnRiseTime tr － 300 610 ns Turn-OffDelayTime td(off) － 90 190 ns Turn-OffFallTime tf － 145 300 ns TotalGateCharge Qg VDS=60V,ID=75A, VGS=10V,(Note4,5) － 75 98 nC Gate-SourceCharge Qgs － 14 － nC Gate-DrainCharge Qgd － 37 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 75 A PulsedDiodeForwardCurrent ISM － － 300 A DiodeForwardVoltage VSD IS=75A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=75A, dIF/dt=100A/us, (Note4) － 84 － ns ReverseRecoveryCharge Qrr － 250 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=20V,starling,L=0.4mH,Rg=25Ω,IAS=75A,TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.