75343S

75343S VBSEMI | Alldatasheet

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Technical content

www.VBsemi.com D D 75343S-VB Datasheet N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET®powerMOSFET
• Packagewithlow thermalresistance
• 100%R g andUIStested TO-263 D G S Top View G N-ChannelMOSFET S ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise noted) PARAMETER LIMIT UNITSYMBOL VDrain-SourceVoltage DS 60 VVGate-SourceVoltage GS ± 20 TC = 25°CContinuousDrain Current a ID TC A = 125°C 65 ContinuousSourceCurrent (Diode Conduction)a IS 120 IPulsedDrain Currentb DM 350 SinglePulseAvalancheCurrent I L =0.1mH AS 65 ESinglePulseAvalancheEnergy AS 211 mJ TC MaximumPower Dissipationb = 25°C PD

220 WTC = 125°C 70

TJ,TOperatingJunctionandStorage Temperature Range stg -55 to+175 °C THERMAL RESISTANCE RATINGS PARAMETER LIMIT UNIT PCB MountJunction-to-Ambient c 40 °C/W SYMBOL RthJA RJunction-to-Case(Drain) thJC 0.65 Notes a. Packagelimited. b. Pulsetest;pulsewidth  300μs,dutycycle  2 %. c. Whenmountedon 1"squarePCB(FR4material). PRODUCT SUMMARY VDS 60 V RDS(on)VGS =10 V 4 m ID A Configuration Single g 150 150

www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDrain-SourceBreakdown Voltage DS VGS =0,I D =250 μA 60 - - VVGate-SourceThresholdVoltage GS(th) VDS =VGS,ID = 250 μA 2.0 4.0 IGate-SourceLeakage GSS VDS =0 V,VGS = ±20V - - ±100 nA ZeroGateVoltage Drain Current VGS IDSS = 0 V VDS = 60V - - 1 VGS μA= 0 V VDS = 60V,TJ = 125 °C - - 50 VGS = 0 V VDS = 60V,TJ = 175 °C - - 250 IOn-StateDrain Currenta D(on) VDS VGS =10 V 5V 120 - A Drain-SourceOn-StateResistance a VGS RDS(on) =10 V ID =30 A - 4 - mVGS =10 V ID = 30A,TJ = 125 °C - 12 - VGS =10 V ID = 30A,TJ = 175 °C - 15 - gForwardTransconductance b fs VDS = 15V,ID = 30A - 94 - S Dynamic b CInputCapacitance iss VGS = 0 V VDS =25 V,f =1MHz - 7000 C pFOutputCapacitance oss - 715 CReverseTransfer Capacitance rss - - 360 TotalGateCharge c Qg VGS =10 V VDS = 30V,ID =75 A - 96 145 Q nCGate-SourceCharge gs - 24 - QGate-DrainCharge c gd - 27 - GateResistance Rg f=1 MHz 0.3 1 1.7 Ω tTurn-On DelayTimec d(on) VDD =30 V,RL = 0.4Ω ID  75 A,VGEN = 10V,Rg = 1Ω - 16 24 RiseTime ns c tr - 14 21 tTurn-OffDelayTime c d(off) - 34 51 FallTime c tf - 9 14 Source-Drain Diode Ratings and Characteristicsb IPulsedCurrent a SM - - 450 A VForward Voltage SD IF = 75 A,VGS = 0 - 0.9 1.5 V g Notes a. Pulsetest;pulsewidth  300μs,dutycycle  2 %. b. Guaranteedbydesign,not subjecttoproductiontesting. c. Independentofoperatingtemperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.VBsemi.com TYPICAL CHARACTERISTICS(TA=25°C,unlessotherwisenoted) TC= 25 °C TC TC= 125 °C = -55 °C C - Capacitance (pF) gfs- Transconductance (S) 150 120 225 200 175 150 125 100 4 8 12 16 20 VDS 0 2 4 6 8 10 -Drain-to-Source Voltage (V) VGS Output Characteristics - Gate-to-Source Voltage (V) Transfer Characteristics 1.5 200 1.2 160 0.9 120 0.6 80 0.3 40 0.0 0 2 4 6 8 10 VGS -Gate-to-Source Voltage (V) Transfer Characteristics 0 14 28 42 56 70 ID - Drain Current (A) Transconductance 0.020 10000 0.016 8000 0.012 6000 0.008 4000 0.004 0.000 0 20 40 60 80 100 120 ID- Drain Current (A) On-Resistance vs. Drain Current 2000 0 10 20 30 40 50 60 VDS- Drain-to-Source Voltage (V) Capacitance VGS = 10 V thru 7V VGS= 6V VGS= 4V TC= 25°C TC= 125 °C TC= -55 °C TC = -55 °C TC = 25 °C TC = 125 °C RDS(on) -On-Resistance (Ω) ID- Drain Current (A)ID - Drain Current (A) ID -Drain Current (A) VGS = 10 V Ciss Coss Crss g

www.VBsemi.com TYPICAL CHARACTERISTICS(TA=25°C,unlessotherwisenoted) ID = 110 A VDS= 20 V TJ = 150 °C RDS(on) TJ= 25 °C -On-Resistance(Normalized) 0 20 40 60 80 100 Qg- Total Gate Charge (nC) 2.1 1.8 1.5 1.2 0.9 Gate Charge 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ- Junction Temperature (°C) On-Resistance vs. Junction Temperature 100 0.1 0.01 0.001 VSD -Source-to-Drain Voltage (V) 0.05 0.04 0.03 0.02 0.01 Source Drain Diode Forward Voltage 0.00 0 2 4 6 8 10 VGS -Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.6 0.2 -0.2 -0.6 -1.0 -1.4 -1.8 -50 -25 0 25 50 75 100 125 150 175 TJ- Temperature(°C) ThresholdVoltage -50 -25 0 25 50 75100 125 150 175 TJ- Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature ID= 10 A VGS= 10 V TJ= 150 °C TJ= 25 °C VGS(th) Variance(V) IS -Source Current (A) RDS(on) - On-Resistance (Ω) VGS -Gate-to-Source Voltage (V) VDS -Drain-to-Source Voltage (V) ID = 5 mA ID = 250 μA ID = 10 mA g

www.VBsemi.com THERMAL RATINGS(TA =25 °C, unless otherwise noted) 1000 100 0.1 0.01 0.01 0.1 1 10 100 VDS -Drain-to-Source Voltage (V) * VGS> minimum VGSat which RDS(on) is specified Safe Operating Area 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square WavePulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient IDM Limited IDLimited 100 μs 1 ms 10 ms 100 ms 1s, 10 s, DCLimited byRDS(on)* TC= 25 °C Single Pulse BVDSS Limited g Normalized Effective Transient Thermal Impedance ID -Drain Current (A)

www.VBsemi.com THERMAL RATINGS(TA =25 °C, unless otherwise noted) 0.1 0.01 10-4 10-3 1010-2 Square Wave Pulse Duration (s) -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note

• Thecharacteristicsshown inthetwo graphs -Normalized TransientThermalImpedance Junction-to-Ambient(25°C) -Normalized TransientThermalImpedance Junction-to-Case(25°C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities canwidelyvary depending onactual applicationparametersandoperating conditions. g Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse Normalized EffectiveTransient Thermal Impedance

www.VBsemi.com TO-263 (D2PAK): 3-LEAD A Detail“A” c DETAIL A (ROTATED 90°) SECTION A-A Notes 1. PlaneBincludesmaximumfeaturesofheatsinktabandplastic. 2. No more than 25 %of L1 can fall above seating plane by max. 8mils. 3. Pin-to-pincoplanaritymax. 4 mils. 4. *:ThinleadisforSUB,SYB. Thicklead isfor SUM,SYM,SQM. 5. Useinchesastheprimarymeasurement. 6. Thisfeature isforthicklead. E A A b2 e b

0.010 M A M

-A- K b -B- M c L3 D L DIM. INCHES MILLIMETERS MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* Thinlead 0.013 0.018 0.330 0.457 Thicklead 0.023 0.028 0.584 0.711 c1 Thinlead 0.013 0.017 0.330 0.431 Thicklead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100BSC 2.54BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 0.010BSC 0.254BSC M - 0.002 - 0.050 ECN:T13-0707-Rev. K,30-Sep-13 DWG:5843 g

www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2 PAK: 3-Lead Recommended Minimum Pads Dimensions inInches/(mm) g 0.420 (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 0.635 (1.257) (16.129) 0.355 (9.017)

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