HUF75229P3 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 44A, 50V
  • Low On-Resistance, rDS(ON) = 0.022Ω
  • Temperature Compensating PSPICE Model
  • Thermal Impedance SPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

HUF75229P3 TO-220AB 75229P NOTE: When ordering use the entire part number. D G S DRAIN SOURCE GATE DRAIN (FLANGE) Data Sheet June 1998 File Number 4536.1

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS Drain Current Figure 5 A 0.6 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V (Figure 11) 50 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 10) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 45V, VGS = 0V - - 1 µA VDS = 40V, VGS = 0V, TC = 150oC - - 250 µA Gate to Source Leakage Current I GSS VGS =±20V - - ±100 nA Drain to Source On Resistance r DS(ON) ID = 44A, VGS = 10V (Figure 9) 0.017 0.020 0.022 Ω Turn-On Time t ON VDD = 30V, ID ≅ 44A, R L = 0.68Ω , VGS = 10V, R GS = 9.1Ω (Figures 18, 19) - - 105 ns Turn-On Delay Time t d(ON) -1 2-n s Rise Time t r -5 8-n s Turn-Off Delay Time t d(OFF) -3 3-n s Fall Time t f -3 3-n s Turn-Off Time t OFF - - 100 ns Total Gate Charge Q g(TOT) VGS = 0V to 20V V DD = 30V, ID ≅ 44A, R L = 0.68Ω Ig(REF) = 1.0mA (Figures 13, 16, 17) -6 0 7 5 n C Gate Charge at 10V Q g(10) VGS = 0V to 10V - 35 43 nC Threshold Gate Charge Q g(TH) VGS = 0V to 2V - 2.0 2.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 1060 - pF Output Capacitance C OSS - 405 - pF Reverse Transfer Capacitance C RSS -9 5-p F Thermal Resistance Junction to Case R θJC (Figure 3) - - 1.66 oC/W Thermal Resistance Junction to Ambient R θJA TO-220 - - 62 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 44A - - 1.25 V Reverse Recovery Time t rr ISD = 44A, dISD /dt = 100A/µs- - 7 2 n s Reverse Recovered Charge Q RR ISD = 44A, dISD /dt = 100A/µs - - 120 nC HUF75229P3

FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

SUBCKT HUF75229P3 2 1 3 ; rev 6/19/97 CA 12 8 1.72e-9 CB 15 14 1.52e-9 CIN 6 8 9.61e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 58.13 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 2.86e-9 LSOURCE 3 7 2.69e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1e-3 RGATE 9 20 1.52 RLDRAIN 2 5 10 RLGATE 1 9 26.9 RLSOURCE 3 7 28.6 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 13.85e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*135),3.5))} .MODEL DBREAKMOD D (RS = 2.14e-1 TRS1 = 9.62e-4 TRS2 = 1.23e-6) .MODEL DPLCAPMOD D (CJO = 13.5e-10 IS = 1e-30 N = 10 M = 0.85) .MODEL MMEDMOD NMOS (VTO = 3.25 KP = 2.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.52) .MODEL MSTROMOD NMOS (VTO = 3.80 KP = 70.0 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = 1.94e-7) .MODEL RDRAINMOD RES (TC1 = 8.04e-2 TC2 = 1.37e-4) .MODEL RSLCMOD RES (TC1 = 4.83e-3 TC2 = 1.16e-6) .MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTHRESMOD RES (TC = -3.43e-3 TC2 = -1.63e-5) .MODEL RVTEMPMOD RES (TC1 = -1.35e-3 TC2 = 1.16e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.90 VOFF= -4.90) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.90 VOFF= -7.90) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= 2.50) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.50 VOFF= -0.50) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE HUF75229P3

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com SPICE Thermal Model REV 16 June 97 HUF75229P3 CTHERM1 7 6 4.90e-7 CTHERM2 6 5 4.90e-4 CTHERM3 5 4 1.96e-3 CTHERM4 4 3 7.90e-3 CTHERM5 3 2 1.85e-1 CTHERM6 2 1 2.70 RTHERM1 7 6 1.10e-2 RTHERM2 6 5 3.30e-2 RTHERM3 5 4 1.64e-1 RTHERM4 4 3 7.90e-1 RTHERM5 3 2 3.60e-1 RTHERM6 2 1 1.60e-1 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1

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