74VCX16374 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
- Designed for Low V oltage Operation: VCC = 1.65 V − 3.6 V
- 3.6 V Tolerant Inputs and Outputs
- High Speed Operation: 3.0 ns max for 3.0 V to 3.6 V 3.9 ns max for 2.3 V to 2.7 V 7.8 ns max for 1.65 V to 1.95 V
- Static Drive: ±24 mA Drive at 3.0 V ±18 mA Drive at 2.3 V ±6 mA Drive at 1.65 V
- Supports Live Insertion and Withdrawal
- IOFF Specification Guarantees High Impedance When VCC = 0 V
- Near Zero Static Supply Current in All Three Logic States (20 /C0109A) Substantially Reduces System Power Requirements
- Latchup Performance Exceeds ±250 mA @ 125°C
- ESD Performance: Human Body Model >2000 V Machine Model >200 V
- All Devices in Package TSSOP are Inherently Pb−Free* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAM A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week TSSOP−48 DT SUFFIX CASE 1201 1 VCX16374 AWLYYWW PIN NAMES Function Output Enable Inputs Clock Pulse Inputs Inputs Outputs Pins OEn CPn D0−D15 O0−O15 Device Package Shipping †
ORDERING INFORMATION
(Pb−Free) 39 / Rail 74VCX16374DTR TSSOP (Pb−Free) 2500 / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com
Figure 1. 48−Lead Pinout Figure 2. Logic Diagram
481 CP1OE1
472 D0O0
463 D1O1
454 GNDGND
445 D2O2
436 D3O3
427 VCCVCC
418 D4O4
409 D5O5
3910 GNDGND
3811 D6O6
3712 D7O7
3613 D8O8
3514 D9O9
3415 GNDGND
3316 D10O10
3217 D11O11
3118 VCCVCC
3019 D12O12
2920 D13O13
2821 GNDGND
2722 D14O14
2623 D15O15
2524 CP2OE2
Figure 3. IEC Logic Diagram
http://onsemi.com TRUTH TABLE Inputs Outputs Inputs Outputs CP1 OE1 D0:7 O0:7 CP2 OE2 D8:15 O8:15 ↑ L H H ↑ L H H ↑ L L L ↑ L L L X L X O0 X L X O0 X H X Z X H X Z H = High Voltage Level L = Low Voltage Level Z = High Impedance State ↑= Low−to−High Transition X = High or Low Voltage Level and Transitions Are Acceptable, for ICC reasons, DO NOT FLOAT Inputs O0 = No Change ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Condition Unit VCC DC Supply Voltage −0.5 to +4.6 V VI DC Input Voltage −0.5 ≤ VI ≤ +4.6 V VO DC Output Voltage −0.5 ≤ VO ≤ +4.6 Output in 3−State V −0.5 ≤ VO ≤ VCC + 0.5 Note 1; Outputs Active V IIK DC Input Diode Current −50 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. I O absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Typ Max Unit VCC Supply Voltage Operating Data Retention Only 1.65 1.2 3.3 3.3 3.6 3.6 V VI Input Voltage −0.3 3.6 V VO Output Voltage (Active State) (3−State) VCC 3.6 V IOH HIGH Level Output Current, VCC = 3.0 V − 3.6 V −24 mA IOL LOW Level Output Current, VCC = 3.0 V − 3.6 V 24 mA IOH HIGH Level Output Current, VCC = 2.3 V − 2.7 V −18 mA IOL LOW Level Output Current, VCC = 2.3 V − 2.7 V 18 mA IOH HIGH Level Output Current, VCC = 1.65 V − 1.95 V −6 mA IOL LOW Level Output Current, VCC = 1.65 V − 1.95 V 6 mA TA Operating Free−Air Temperature −40 +85 °C /C0068t//C0068V Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V 0 10 ns/V
http://onsemi.com DC ELECTRICAL CHARACTERISTICS Symbol Characteristic Condition TA = −40°C to +85°C UnitMin Max VIH HIGH Level Input Voltage (Note 2) 1.65 V ≤ VCC < 2.3 V 0.65 x VCC V 2.3 V ≤ VCC ≤ 2.7 V 1.6 2.7 V < VCC ≤ 3.6 V 2.0 VIL LOW Level Input Voltage (Note 2) 1.65 V ≤ VCC < 2.3 V 0.35 x VCC V 2.3 V ≤ VCC ≤ 2.7 V 0.7 2.7 V < VCC ≤ 3.6 V 0.8 VOH HIGH Level Output Voltage 1.65 V ≤ VCC ≤ 3.6 V; IOH = −100 /C0109A VCC − 0.2 V VCC = 1.65 V; IOH = −6 mA 1.25 VCC = 2.3 V; IOH = −6 mA 2.0 VCC = 2.3 V; IOH = −12 mA 1.8 VCC = 2.3 V; IOH = −18 mA 1.7 VCC = 2.7 V; IOH = −12 mA 2.2 VCC = 3.0 V; IOH = −18 mA 2.4 VCC = 3.0 V; IOH = −24 mA 2.2 VOL LOW Level Output Voltage 1.65 V ≤ VCC ≤ 3.6 V; IOL = 100 /C0109A 0.2 V VCC = 1.65 V; IOL = 6 mA 0.3 VCC = 2.3 V; IOL = 12 mA 0.4 VCC = 2.3 V; IOL = 18 mA 0.6 VCC = 2.7 V; IOL = 12 mA 0.4 VCC = 3.0 V; IOL = 18 mA 0.4 VCC = 3.0 V; IOL = 24 mA 0.55 II Input Leakage Current 1.65 V ≤ VCC ≤ 3.6 V; 0 V ≤ VI ≤ 3.6 V ±5.0 /C0109A IOZ 3−State Output Current 1.65 V ≤ VCC ≤ 3.6 V; 0 V ≤ VO ≤ 3.6 V; VI = VIH or VIL ±10 /C0109A IOFF Power−Off Leakage Current VCC = 0 V; VI or VO = 3.6 V 10 /C0109A ICC Quiescent Supply Current (Note 3) 1.65 V ≤ VCC ≤ 3.6 V; VI = GND or VCC 20 /C0109A 1.65 V ≤ VCC ≤ 3.6 V; 3.6 V ≤ VI, VO ≤ 3.6 V ±20 /C0109A /C0068ICC Increase in ICC per Input 2.7 V < VCC ≤ 3.6 V; VIH = VCC − 0.6 V 750 /C0109A 2. These values of V I are used to test DC electrical characteristics only. 3. Outputs disabled or 3 −state only.
http://onsemi.com AC CHARACTERISTICS (Note 4; tR = tF = 2.0 ns; CL = 30 pF; RL = 500 /C0087) Symbol Parameter Waveform TA = −40°C to +85°C Unit Min Max Min Max Min Max fmax Clock Pulse Frequency 1 250 200 100 MHz tPLH tPHL Propagation Delay CP−to−On 1 0.8 0.8 3.0 3.0 1.0 1.0 3.9 3.9 1.5 1.5 7.8 7.8 ns tPZH tPZL Output Enable Time to High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 4.6 4.6 1.5 1.5 9.2 9.2 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 3.8 3.8 1.5 1.5 6.8 6.8 ns ts Setup Time, High or Low Dn−to−CP 3 1.5 1.5 2.5 ns th Hold Time, High or Low Dn−to−CP 3 1.0 1.0 1.0 ns tw CP Pulse Width, High 3 1.5 1.5 4.0 ns tOSHL tOSLH Output−to−Output Skew (Note 5) 0.5 0.5 0.5 0.5 0.75 0.75 ns 4. For C L = 50 pF, add approximately 300 ps to the AC maximum specification. 5. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. AC CHARACTERISTICS (tR = tF = 2.0 ns; CL = 50 pF; RL = 500 /C0087) Symbol Parameter Waveform TA = −40°C to +85°C Unit VCC = 3.0 V to 3.6 V VCC = 2.7 V Min Max Min Max fmax Clock Pulse Frequency 4 150 150 MHz tPLH tPHL Propagation Delay CP−to−On 4 1.0 1.0 4.2 4.2 4.9 4.9 ns tPZH tPZL Output Enable Time to High and Low Level 5 1.0 1.0 4.8 4.8 5.9 5.9 ns tPHZ tPLZ Output Disable Time From High and Low Level 5 1.0 1.0 4.3 4.3 4.7 4.7 ns tOSHL tOSLH Output−to−Output Skew (Note 6) 0.5 0.5 0.5 0.5 ns 6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design.
http://onsemi.com DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition TA = +25°C UnitTyp VOLP Dynamic LOW Peak Voltage (Note 7) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V 0.25 V VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V 0.6 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V 0.8 VOLV Dynamic LOW Valley Voltage (Note 7) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V −0.25 V VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V −0.6 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V −0.8 VOHV Dynamic HIGH Valley Voltage (Note 8) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V 1.5 V VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V 1.9 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V 2.2 7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. 8. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the HIGH state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance Note 9 6 pF COUT Output Capacitance Note 9 7 pF CPD Power Dissipation Capacitance Note 9, 10 MHz 20 pF
6 V or VCC × 2
Figure 6. Test Circuit Table 2. TEST CIRCUIT
Figure 9. Test Circuit Table 4. TEST CIRCUIT
http://onsemi.com PACKAGE DIMENSIONS TSSOP DT SUFFIX CASE 1201−01 ISSUE A ÇÇÇ ÇÇÇ ÇÇÇ SUM0.12 (0.005) V ST SUM0.254 (0.010) T −V− B A L K −U− 48X REF PIN 1 IDENT. 12 4 2548 0.076 (0.003) SEATING D −T− PLANE DIM MIN MAX MIN MAX INCHESMILLIMETERS A 12.40 12.60 0.488 0.496 B 6.00 6.20 0.236 0.244 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.50 BSC 0.0197 BSC J 0.09 0.20 0.004 0.008 J1 0.09 0.16 0.004 0.006 K 0.17 0.27 0.007 0.011 K1 0.17 0.23 0.007 0.009 L 7.95 8.25 0.313 0.325 M 0 8 0 8 /C0095/C0095/C0095/C0095 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. ÉÉÉ ÉÉÉ C G H −W− DETAIL E J K SECTION N−N M 0.25 (0.010) F DETAIL E N N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 74VCX16374/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative