74VCX16245 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
- Designed for Low Voltage Operation: VCC = 1.65−3.6 V
- 3.6 V Tolerant Inputs and Outputs
- High Speed Operation: 2.5 ns max for 3.0 to 3.6 V 3.0 ns max for 2.3 to 2.7 V 6.0 ns max for 1.65 to 1.95 V
- Static Drive: ±24 mA Drive at 3.0 V ±18 mA Drive at 2.3 V ±6 mA Drive at 1.65 V
- Supports Live Insertion and Withdrawal
- IOFF Specification Guarantees High Impedance When VCC = 0 V
- Near Zero Static Supply Current in All Three Logic States (20 A) Substantially Reduces System Power Requirements
- Latchup Performance Exceeds ±250 mA @ 125°C
- ESD Performance: Human Body Model >2000 V; Machine Model >200 V
- Pb−Free Package is Available* MARKING DIAGRAM A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week TSSOP−48 DT SUFFIX CASE 1201 VCX16245 AWLYYWW Device Package Shipping†
ORDERING INFORMATION
2500/Tape & Reel http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 74VCX16245DTRG TSSOP (Pb−Free) 2500/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com ABSOLUTE MAXIMUM RATINGS* Symbol Parameter Value Condition Unit VCC DC Supply Voltage −0.5 to +4.6 V VI DC Input Voltage −0.5 ≤ VI ≤ +4.6 V VO DC Output Voltage −0.5 ≤ VO ≤ +4.6 Output in 3−State V Note 1.; Outputs Active V IIK DC Input Diode Current −50 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. 1. IO absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Typ Max Unit VCC Supply Voltage Operating Data Retention Only 1.65 1.2 3.3 3.3 3.6 3.6 V VI Input Voltage −0.3 3.6 V VO Output Voltage (Active State) (3−State) VCC 3.6 V IOH HIGH Level Output Current, VCC = 3.0V − 3.6V −24 mA IOL LOW Level Output Current, VCC = 3.0V − 3.6V mA IOH HIGH Level Output Current, VCC = 2.3V − 2.7V −18 mA IOL LOW Level Output Current, VCC = 2.3V − 2.7V mA IOH HIGH Level Output Current, VCC = 1.65 − 1.95V mA IOL LOW Level Output Current, VCC = 1.65 − 1.95V mA TA Operating Free−Air Temperature −40 +85 t/V Input Transition Rise or Fall Rate, VIN from 0.8V to 2.0V, VCC = 3.0V ns/V
http://onsemi.com DC ELECTRICAL CHARACTERISTICS TA = −40°C to +85°C Symbol Characteristic Condition Min Max Unit VIH HIGH Level Input Voltage (Note 2.) 1.65V ≤ VCC < 2.3V 0.65 x VCC V 2.3V ≤ VCC ≤ 2.7V 1.6 2.7V < VCC ≤ 3.6V 2.0 VIL LOW Level Input Voltage (Note 2.) 1.65V ≤ VCC < 2.3V 0.35 x VCC V 2.3V ≤ VCC ≤ 2.7V 0.7 2.7V < VCC ≤ 3.6V 0.8 VOH HIGH Level Output Voltage 1.65V ≤ VCC ≤ 3.6V; IOH = −100A VCC −0.2 V VCC = 1.65V; IOH = −6mA 1.25 VCC = 2.3V; IOH = −6mA 2.0 VCC = 2.3V; IOH = −12mA 1.8 VCC = 2.3V; IOH = −18mA 1.7 VCC = 2.7V; IOH = −12mA 2.2 VCC = 3.0V; IOH = −18mA 2.4 VCC = 3.0V; IOH = −24mA 2.2 VOL LOW Level Output Voltage 1.65V ≤ VCC ≤ 3.6V; IOL = 100A 0.2 V VCC = 1.65V; IOL = 6mA 0.3 VCC = 2.3V; IOL = 12mA 0.4 VCC = 2.3V; IOL = 18mA 0.6 VCC = 2.7V; IOL = 12mA 0.4 VCC = 3.0V; IOL = 18mA 0.4 VCC = 3.0V; IOL = 24mA 0.55 II Input Leakage Current 1.65V ≤ VCC ≤ 3.6V; 0V ≤ VI ≤ 3.6V ±5.0 A IOZ 3−State Output Current 1.65V ≤ VCC ≤ 3.6V; 0V ≤ VO ≤ 3.6V; VI = VIH or VIL ±10 A IOFF Power−Off Leakage Current VCC = 0V; VI or VO = 3.6V A ICC Quiescent Supply Current (Note 3.) 1.65V ≤ VCC ≤ 3.6V; VI = GND or VCC A 1.65V ≤ VCC ≤ 3.6V; 3.6V ≤ VI, VO ≤ 3.6V ±20 A ICC Increase in ICC per Input 2.7V < VCC ≤ 3.6V; VIH = VCC − 0.6V 750 A 2. These values of VI are used to test DC electrical characteristics only. 3. Outputs disabled or 3−state only. AC CHARACTERISTICS (Note 4.; tR = tF = 2.0ns; CL = 30pF; RL = 500) Limits TA = −40°C to +85°C VCC = 3.0V to 3.6V VCC = 2.3V to 2.7V VCC = 1.65 to1.95V Symbol Parameter Waveform Min Max Min Max Min Max Unit tPLH tPHL Propagation Delay Input to Output 0.8 0.8 2.5 2.5 1.0 1.0 3.0 3.0 1.5 1.5 6.0 6.0 ns tPZH tPZL Output Enable Time to High and Low Level 0.8 0.8 3.8 3.8 1.0 1.0 4.9 4.9 1.5 1.5 9.3 9.3 ns tPHZ tPLZ Output Disable Time From High and Low Level 0.8 0.8 3.7 3.7 1.0 1.0 4.2 4.2 1.5 1.5 7.6 7.6 ns tOSHL tOSLH Output−to−Output Skew (Note 5.) 0.5 0.5 0.5 0.5 0.75 0.75 ns 4. For CL = 50pF, add approximately 300ps to the AC maximum specification. 5. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design.
http://onsemi.com DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol Characteristic Condition Typ Unit VOLP Dynamic LOW Peak Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V 0.25 V (Note 6.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V 0.6 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V 0.8 VOLV Dynamic LOW Valley Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V −0.25 V (Note 6.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V −0.6 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V −0.8 VOHV Dynamic HIGH Valley Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V 1.5 V (Note 7.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V 1.9 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V 2.2 6. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. 7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the HIGH state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance Note 8. pF COUT Output Capacitance Note 8. pF CPD Power Dissipation Capacitance Note 8., 10MHz pF AC CHARACTERISTICS (tR = tF = 2.0ns; CL = 50pF; RL = 500) Limits TA = −40°C to +85°C VCC = 3.0V to 3.6V VCC = 2.7V Symbol Parameter Waveform Min Max Min Max Unit tPLH tPHL Propagation Delay Input to Output 1.0 1.0 3.0 3.0 3.6 3.6 ns tPZH tPZL Output Enable Time to High and Low Level 1.0 1.0 4.4 4.4 5.4 5.4 ns tPHZ tPLZ Output Disable Time From High and Low Level 1.0 1.0 4.1 4.1 4.6 4.6 ns tOSHL tOSLH Output−to−Output Skew (Note 9.) 0.5 0.5 0.5 0.5 ns 9. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design.
http://onsemi.com PACKAGE DIMENSIONS TSSOP DT SUFFIX CASE 1201−01 ISSUE A ÇÇÇ ÇÇÇ ÇÇÇ S U M 0.12 (0.005) V S T S U M 0.254 (0.010) T −V− B A L K −U− 48X REF PIN 1 IDENT. 0.076 (0.003) SEATING D −T− PLANE DIM MIN MAX MIN MAX INCHES MILLIMETERS A 12.40 12.60 0.488 0.496 B 6.00 6.20 0.236 0.244 C −−− 1.10 −−− 0.043 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G
0.50 BSC
0.0197 BSC
H 0.37 −−− 0.015 −−− J 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 K 0.17 0.27 0.007 0.011 0.17 0.23 0.007 0.009 L 7.95 8.25 0.313 0.325 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. ÉÉÉ ÉÉÉ C G H −W− DETAIL E J K SECTION N−N M 0.25 (0.010) F DETAIL E N N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 74VCX16245/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.