74VCX16244 ONSEMI | Alldatasheet

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Technical content

Features

  • Designed for Low V oltage Operation: VCC = 1.65 V − 3.6 V
  • 3.6 V Tolerant Inputs and Outputs
  • High Speed Operation: 2.5 ns max for 3.0 V to 3.6 V 3.0 ns max for 2.3 V to 2.7 V 6.0 ns max for 1.65 V to 1.95 V
  • Static Drive:±24 mA Drive at 3.0 V ±18 mA Drive at 2.3 V ±6 mA Drive at 1.65 V
  • Supports Live Insertion and Withdrawal
  • IOFF Specification Guarantees High Impedance When VCC = 0 V
  • Near Zero Static Supply Current in All Three Logic States (20 A) Substantially Reduces System Power Requirements
  • Latchup Performance Exceeds ±250 mA @ 125 °C
  • ESD Performance: Human Body Model >2000 V; Machine Model >200 V
  • All Devices in Package TSSOP are Inherently Pb−Free* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAM A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week TSSOP−48 DT SUFFIX CASE 1201 VCX16244 AWLYYWW Device Package Shipping †

ORDERING INFORMATION

(Pb−Free) 39 / Rail 74VCX16244DTR TSSOP (Pb−Free) 2500 / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com

481 OE2OE1

472 D0O0

463 D1O1

454 GNDGND

445 D2O2

436 D3O3

427 VCCVCC

418 D4O4

409 D5O5

3910 GNDGND

3811 D6O6

3712 D7O7

3613 D8O8

3514 D9O9

3415 GNDGND

3316 D10O10

3217 D11O11

3118 VCCVCC

3019 D12O12

2920 D13O13

2821 GNDGND

2722 D14O14

2623 D15O15

2524 OE3OE4

Figure 1. 48−Lead Pinout Figure 2. Logic Diagram Figure 3. IEC Logic Diagram Table 1. PIN NAMES

http://onsemi.com ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Condition Unit VCC DC Supply Voltage −0.5 to +4.6 V VI DC Input Voltage −0.5 ≤ VI ≤ +4.6 V VO DC Output Voltage −0.5 ≤ VO ≤ +4.6 Output in 3−State V −0.5 ≤ VO ≤ VCC + 0.5 Note 1; Outputs Active V IIK DC Input Diode Current −50 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. I O absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Typ Max Unit VCC Supply Voltage Operating Data Retention Only 1.65 1.2 3.3 3.3 3.6 3.6 V VI Input Voltage −0.3 3.6 V VO Output Voltage (Active State) (3−State) VCC 3.6 V IOH HIGH Level Output Current, VCC = 3.0 V − 3.6 V −24 mA IOL LOW Level Output Current, VCC = 3.0 V − 3.6 V 24 mA IOH HIGH Level Output Current, VCC = 2.3 V − 2.7 V −18 mA IOL LOW Level Output Current, VCC = 2.3 V − 2.7 V 18 mA IOH HIGH Level Output Current, VCC = 1.65 V − 1.95 V −6 mA IOL LOW Level Output Current, VCC = 1.65 V − 1.95 V 6 mA TA Operating Free−Air Temperature −40 +85 °C t/V Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V 0 10 ns/V

http://onsemi.com DC ELECTRICAL CHARACTERISTICS TA = −40°C to +85°C Symbol Characteristic Condition Min Max Unit VIH HIGH Level Input Voltage (Note 2) 1.65 V ≤ VCC < 2.3 V 0.65 x VCC V 2.3 V ≤ VCC ≤ 2.7 V 1.6 2.7 V < VCC ≤ 3.6 V 2.0 VIL LOW Level Input Voltage (Note 2) 1.65 V ≤ VCC < 2.3 V 0.35 x VCC V 2.3 V ≤ VCC ≤ 2.7 V 0.7 2.7 V < VCC ≤ 3.6 V 0.8 VOH HIGH Level Output Voltage 1.65 V ≤ VCC ≤ 3.6 V; IOH = −100 A VCC − 0.2 V VCC = 1.65 V; IOH = −6 mA 1.25 VCC = 2.3 V; IOH = −6 mA 2.0 VCC = 2.3 V; IOH = −12 mA 1.8 VCC = 2.3 V; IOH = −18 mA 1.7 VCC = 2.7 V; IOH = −12 mA 2.2 VCC = 3.0 V; IOH = −18 mA 2.4 VCC = 3.0 V; IOH = −24 mA 2.2 VOL LOW Level Output Voltage 1.65 V ≤ VCC ≤ 3.6 V; IOL = 100 A 0.2 V VCC = 1.65 V; IOL = 6 mA 0.3 VCC = 2.3 V; IOL = 12 mA 0.4 VCC = 2.3 V; IOL = 18 mA 0.6 VCC = 2.7 V; IOL = 12 mA 0.4 VCC = 3.0 V; IOL = 18 mA 0.4 VCC = 3.0 V; IOL = 24 mA 0.55 II Input Leakage Current 1.65 V ≤ VCC ≤ 3.6 V; 0 V ≤ VI ≤ 3.6 V ±5.0 A IOZ 3−State Output Current 1.65 V ≤ VCC ≤ 3.6 V; 0 V ≤ VO ≤ 3.6 V; VI = VIH or VIL ±10 A IOFF Power−Off Leakage Current VCC = 0 V; VI or VO = 3.6 V 10 A ICC Quiescent Supply Current (Note 3) 1.65 V ≤ VCC ≤ 3.6 V; VI = GND or VCC 20 A 1.65 V ≤ VCC ≤ 3.6 V; 3.6 V ≤ VI, VO ≤ 3.6 V ±20 A ICC Increase in ICC per Input 2.7 V < VCC ≤ 3.6 V; VIH = VCC − 0.6 V 750 A 2. These values of VI are used to test DC electrical characteristics only. 3. Outputs disabled or 3−state only.

http://onsemi.com AC CHARACTERISTICS (Note 4; tR = tF = 2.0 ns; CL = 30 pF; RL = 500 ) TA = −40°C to +85°C Symbol Parameter Waveform Min Max Min Max Min Max Unit tPLH tPHL Propagation Delay Input−to−Output 1 0.8 0.8 2.5 2.5 1.0 1.0 3.0 3.0 1.5 1.5 6.0 6.0 ns tPZH tPZL Output Enable Time to High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 4.1 4.1 1.5 1.5 8.2 8.2 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 3.8 3.8 1.5 1.5 6.8 6.8 ns tOSHL tOSLH Output−to−Output Skew (Note 5) 0.5 0.5 0.5 0.5 0.75 0.75 ns 4. For CL = 50 pF, add approximately 300 ps to the AC maximum specification. 5. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL ) or LOW−to−HIGH (tOSLH ); parameter guaranteed by design. AC CHARACTERISTICS (tR = tF = 2.0 ns; CL = 50 pF; RL = 500 ) TA = −40C to +85C VCC = 3.0 V to 3.6 V VCC = 2.7 V Symbol Parameter Waveform Min Max Min Max Unit tPLH tPHL Propagation Delay Input−to−Output 3 1.0 1.0 3.0 3.0 3.6 3.6 ns tPZH tPZL Output Enable Time to High and Low Level 4 1.0 1.0 4.4 4.4 5.4 5.4 ns tPHZ tPLZ Output Disable Time From High and Low Level 4 1.0 1.0 4.1 4.1 4.6 4.6 ns tOSHL tOSLH Output−to−Output Skew (Note 6) 0.5 0.5 0.5 0.5 ns 6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL ) or LOW−to−HIGH (tOSLH ); parameter guaranteed by design.

http://onsemi.com DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition Typical (TA = +25°C) Unit VOLP Dynamic LOW Peak Voltage (Note 7) VCC = 1.8 V, CL = 30 pF, VIH = VCC , VIL = 0 V 0.25 V (Note 7) VCC = 2.5 V, CL = 30 pF, VIH = VCC , VIL = 0 V 0.6 VCC = 3.3 V, CL = 30 pF, VIH = VCC , VIL = 0 V 0.8 VOLV Dynamic LOW Valley Voltage (Note 7) VCC = 1.8 V, CL = 30 pF, VIH = VCC , VIL = 0 V −0.25 V (Note 7) VCC = 2.5 V, CL = 30 pF, VIH = VCC , VIL = 0 V −0.6 VCC = 3.3 V, CL = 30 pF, VIH = VCC , VIL = 0 V −0.8 VOHV Dynamic HIGH Valley Voltage (Note 8) VCC = 1.8 V, CL = 30 pF, VIH = VCC , VIL = 0 V 1.5 V (Note 8) VCC = 2.5 V, CL = 30 pF, VIH = VCC , VIL = 0 V 1.9 VCC = 3.3 V, CL = 30 pF, VIH = VCC , VIL = 0 V 2.2 7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. 8. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the HIGH state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit C IN Input Capacitance Note 9 6 pF C OUT Output Capacitance Note 9 7 pF C PD Power Dissipation Capacitance Note 9, 10MHz 20 pF

Figure 4. AC Waveforms Table 2. AC WAVEFORMS

6 V or VCC × 2

Figure 5. Test Circuit Table 3. TEST CIRCUIT

http://onsemi.com PACKAGE DIMENSIONS TSSOP DT SUFFIX CASE 1201−01 ISSUE A ÇÇÇ ÇÇÇ SUM0.12 (0.005) V ST SUM0.254 (0.010) T −V− B A L K −U− 48X REF PIN 1 IDENT. 12 4 2548 0.076 (0.003) SEATING D −T− PLANE DIM MIN MAX MIN MAX INCHESMILLIMETERS A 12.40 12.60 0.488 0.496 B 6.00 6.20 0.236 0.244 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.50 BSC 0.0197 BSC J 0.09 0.20 0.004 0.008 J1 0.09 0.16 0.004 0.006 K 0.17 0.27 0.007 0.011 K1 0.17 0.23 0.007 0.009 L 7.95 8.25 0.313 0.325 M 0 8 0 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. ÉÉÉ ÉÉÉ C G H −W− DETAIL E J K SECTION N−N M 0.25 (0.010) F DETAIL E N N

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