74V2G66_03 STMICROELECTRONICS | Alldatasheet

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■ HIGH SPEED: tPD = 0.3ns (TYP .) at VCC =5 V tPD = 0.4ns (TYP .) at VCC =3 . 3 V ■ LOW POWER DISSIPATION: I CC =1 µA(MAX.) at TA = 25°C ■ LOW "ON" RESISTANCE: R ON =6.5Ω (TYP.) AT VCC =5 VII/O=1 m A R ON =8 . 5Ω (TYP .) AT VCC =3 . 3 VII/O=1 m A ■ SINE WAVE DISTORTION: 0.04% AT VCC =3 . 3 Vf=1 K H z ■ WIDE OPERATING RANGE: V CC (OPR) = 2V TO 5.5V ■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G66 is an advanced high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C 2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to V CC ). The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many application as Battery Powered System, Test Equipment. It’s available in the commercial and extended temperature range in SOT23-8L package. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. 74V2G66 DUAL BILATERAL SWITCH PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-8L 74V2G66STR SOT23-8L

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION TRUTH TABLE * : High Impedance State ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied RECOMMENDED OPERATING CONDITIONS 1) VIN from 30% to 70% of VCC on control pin PIN No SYMBOL NAME AND FUNCTION 1, 5 1I/O, 2I/O Independent Input/Output 2, 6 1O/I, 2O/I Independent Output/Input 7, 3 1C, 2C Enable Input (Active HIGH)

4 GND Ground (0V)

8 VCC Positive Supply Voltage

L OFF * Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to V CC + 0.5 V V IC DC Control Input Voltage -0.5 to +7.0 V V O DC Output Voltage -0.5 to V CC + 0.5 V IIK DC Input Diode Current ± 20 mA IIK DC Control Input Diode Current -2 0 m A IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 50 mA ICC or IGND DC V CC or Ground Current ± 50 mA Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 300 °C Symbol Parameter Value Unit VCC Supply Voltage 2 to 5.5 V VI Input Voltage 0 to V CC V V IC Control Input Voltage 0 to 5.5 V V O Output Voltage 0 to V CC V Top Operating Temperature -55 to 125 °C dt/dv Input Rise and Fall Time (note 1) VCC = 5.0V 0 to 20 ns/V

(*) Voltage range is 3.3V± 0.3V (**) Voltage range is 5V± 0.5V AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr=tf= 3ns) (*) Voltage range is 3.3V± 0.3V (**) Voltage range is 5.0V± 0.5V Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C V IH High Level Input Voltage 2.0 1.5 1.5 1.5 V2.7 to 5.5 0.7VCC 0.7VCC 0.7VCC VIL Low Level Input Voltage 2.0 0.5 0.5 0.5 V2.7 to 5.5 0.3VCC 0.3VCC 0.3VCC R ON ON Resistance 3.3(*) VIC =V IH VI/O=V CC to GND II/O≤ 1mA 12.5 19 23 27 R ON ON Resistance 3.3(*) VIC =V IH VI/O=V CC or GND II/O≤ 1mA 8.5 10.5 12.5 15 Ω5.0(**) 6.5 8.5 10 12 IOFF Input/Output Leakage Current (SWITCH OFF) 5.5 V OS =V CC to GND VIS =V CC to GND VIC =V IL ±0.1 ± 1 ± 5 µA IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) 5.5 V OS =V CC to GND VIC =V IH ±0.1 ± 1 ± 5 µA IIN Control Input Leakage Current 0t o ICC Quiescent Supply Current 5.5 VI=V CC or GND 11 0 2 0 µA Symbol Parameter Test Condition Value UnitV CC (V) TA = 25°C -40 to 85°C -55 to 125°C tPD Delay Time 3.3(*) tr=tf=6 n s 0.4 0.8 1.2 2.4 ns tPLZ tPHZ Output Disable Time 3.3(*) R L = 500Ω 5.0 7.5 9.0 10.0 ns tPZL tPZH Output Enable Time 3.3(*) R L =1K Ω 2.5 4.0 5.0 7.0 ns

CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr)=C PD xV CC xfIN +ICC /4 ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C) (*)Voltage range is 3.3V± 0.3V (**) Voltage range is 5.0V± 0.5V Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C C IN Input Capacitance 31 0 1 0 1 0 p F C I/O Output Capacitance 10 pF C PD Power Dissipation Capacitance (note 1) 3.3 2.5 pF5.0 3 Symbol Parameter Test Condition Value UnitV CC (V) VIN (Vp-p) Typ. Sine Wave Distortion (THD) 3.3(*) 2.75 fIN =1K H zR L =1 0K Ω ,C L =5 0p F 0.04 5.0(**) 4 0.04 fMAX Frequency Response (Switch ON) 3.3 (*) Adjust fIN voltage to obtain 0 dBm at VOS . Increase fIN Frequency until dB meter reads -3dB R L =5 0Ω ,C L =1 0p F 150 MHz5.0(**) 180 Feed through Attenuation (Switch OFF) 3.3(*) VIN is centered at VCC /2 Adjust fIN Voltage to obtained 0dBm at VIS R L = 600Ω ,C L =5 0p F ,fIN = 1KHz sine wave -60 dB5.0(**) -60 Crosstalk (Control Input to Signal Output) 3.3 (*) R L = 600Ω ,C L =5 0p F ,fIN = 1KHz square wave tr=tf=6 n s mV 5.0(**) 60

SWITCHINGCARACTERISTICSTESTCIRCUIT FEEDTHROUGH ATTENUATION CROSSTALK (control to output BANDWIDTH ATTENUATION MAXIMUM CONTROL FREQUENCY

CHANNEL RESISTANCE (R ON) ICC (Opr.)

DIM. mm. mils A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.22 0.38 8.6 14.9 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 e0 . 6 5 2 5 . 6 e1 1.95 76.7 L 0.35 0.55 13.7 21.6 SOT23-8L MECHANICAL DATA

DIM. mm. inch A 180 7.086 D 20.2 0.795 N 60 2.362 T 14.4 0.567 Tape & Reel SOT23-xL MECHANICAL DATA

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