74V2G126 STMICROELECTRONICS | Alldatasheet
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n HIGH SPEED: tPD = 3.8ns (TYP .) at VCC =5 V n LOW POWER DISSIPATION: ICC =1 µA(MAX.) at TA=25°C n HIGH NOISE IMMUNITY: VNIH =V NIL = 28% VCC (MIN.) n POWER DOWN PROTECTION ON INPUTS AND OUTPUTS n SYMMETRICAL OUTPUT IMPEDANCE: OH |=IOL = 8mA (MIN) at VCC = 4.5V n BALANCED PROPAGATION DELAYS: t PLH ≅ tPHL n OPERATING VOLTAGE RANGE: V CC (OPR) = 2V to 5.5V n IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G126 is an advanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. 3-STATE control input nG has to be set LOW to place the output into the high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. 74V2G126 DUAL BUS BUFFER (3-STATE) PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-8L 74V2G126STR SOT323-8L 74V2G126CTR SOT23-8L SOT323-8L
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION TRUTH TABLE X: ”H” or ”L” Z: High Impedance ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. 1) Vcc=0V or nG=Vcc(Output in High Impedence state) 2) High or Low State RECOMMENDED OPERATING CONDITIONS 1) Vcc=0V or nG=Vcc (Output in High Impedence state) 2) High or Low State 3) V IN from 30% to 70% of VCC PIN No SYMBOL NAME AND FUNCTION 1, 7 1G, 2G Output Enable Inputs 2, 5 1A, 2A Data Inputs 3, 6 2Y, 1Y Data Outputs
4 GND Ground (0V)
8 VCC Positive Supply Voltage
Symbol Parameter Value Unit V CC Supply Voltage -0.5 to +7.0 V V I DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (see note 1) -0.5 to +7.0 V VO DC Output Voltage (see note 2) -0.5 to V CC + 0.5 V IIK DC Input Diode Current − 20 mA IOK DC Output Diode Current − 20 mA IO DC Output Current ± 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 260 °C Symbol Parameter Value Unit V CC Supply Voltage 2 to 5.5 V V I Input Voltage 0 to 5.5 V VO Output Voltage (see note 1) 0 to 5.5 V VO Output Voltage (see note 2) 0 to V CC V Top Operating Temperature -55 to 125 °C dt/dv Input Rise and Fall Time (note 3) (VCC = 3.3± 0.3V) (VCC = 5.0± 0.5V) 0 to 100 0t o2 0 ns/V ns/V
(V) TA =2 5°C -40 to 85°C -55 to 125°C VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V3.0 to 5.5 0.7VCC 0.7VCC 0.7VCC V IL Low Level Input Voltage 2.0 0.5 0.5 0.5 V3.0 to 5.5 0.3VCC 0.3VCC 0.3VCC VOH High Level Ouput Voltage 2.0 I O =-50µA 1.9 2.0 1.9 1.9 V 3.0 IO =-4 mA 2.58 2.48 2.4 4.5 IO =-8 mA 3.94 3.8 3.7 VOL Low Level Output Voltage V 3.0 IO =4 mA 0.36 0.44 0.55 4.5 IO =8 mA 0.36 0.44 0.55 IOZ High Impedance Output Leakage Current
5.5 VI=V IH or VIL
VO = 5.5 or GND ±0.25 ± 2.5 ± 5 µA II Input Leakage Current 0t o 5.5 VI= 5.5V or GND ± 0.1 ± 1 ± 1 µA IOPD Power down Output Leakage Current 0 V O = 5.5 0.5 5 10 µA ICC Quiescent Supply Current 5.5 VI=V CC or GND 11 0 2 0 µA
AC ELECTRICAL CHARACTERISTICS (Input tr =tf= 3ns) (*) Voltage range is 3.3V± 0.3V (**) Voltage range is 5.0V± 0.5V CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr)=C PD xV CC xfIN +ICC /2 Symbol Parameter Test Condition Value UnitVCC (V) C L (pF) TA =2 5°C -40 to 85°C -55 to 125°C tPLH tPHL Propagation Delay Time tPLZ tPHZ Output Disable Time tPZL tPZH Output Enable Time ns Symbol Parameter Test Condition Value UnitTA =2 5°C -40 to 85°C -55 to 125°C C IN Input Capacitance 4 1 01 01 0 p F C OUT Output Capacitance 6p F C PD Power Dissipation Capacitance (note 1) 14 pF
C L =15/50pF or equivalent (includes jig and probe capacitance) R1 = 1KΩ or equivalent R T =Z OUT of pulse generator (typically 50Ω ) WAVEFORM 1 : PROPAGATION DELAYS (f=1MHz; 50% duty cycle) TEST SWITCH tPLH ,tPHL Open tPZL ,tPLZ VCC tPZH ,tPHZ GND
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
DIM. mm. mils A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.22 0.38 8.6 14.9 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 e 0 .65 25.6 e1 1.95 76.7 L 0.35 0.55 13.7 21.6 SOT23-8L MECHANICAL DATA
DIM. mm. mils A 0.80 1.10 31.5 43.3 A1 0.00 0.10 0.0 3.9 A2 0.80 1.00 31.5 34.9 b 0.13 0.28 5.1 11.0 C 0.10 0.18 3.9 7.1 D 1.80 2.20 70.9 86.6 E 1.80 2.40 70.9 94.5 E1 1.15 1.35 45.3 53.1 e 0.5 19.7 e1 1.5 59.0 L 0.10 0.30 3.9 11.8 SOT323-8L MECHANICAL DATA
DIM. mm. inch A 180 7.086 D 20.2 0.795 N 60 2.362 T 14.4 0.567 Tape & Reel SOT23-xL MECHANICAL DATA
DIM. mm. inch A 175 180 185 6.889 7.086 7.283 D 20.2 0.795 N 59.5 60 60.5 2.362 T 14.4 0.567 Ao 2.25 0.088 Bo 2.7 0.106 Ko 1.2 0.047 Tape & Reel SOT323-xL MECHANICAL DATA
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