74V1G77 STMICROELECTRONICS | Alldatasheet

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I HIGH SPEED: tPD = 4.4ns (TYP.) at VCC = 5V I LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C I HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) I POWER DOWN PROTECTION ON INPUTS I SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V I BALANCED PROPAGATION DELAYS: tPLH ≅tPHL I OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V I IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1G77 is an advanced high-speed CMOS SINGLE D-TYPE LATCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is designed to operate from 2V to 5.5V, making this device ideal for portable applications. The single D-Type latch is controlled by a Latch Enable Input (LE). While the LE input is held at a high level, the Q output will follow the data input precisely. When the LE input is taken low the Q output is latched precisely at the logic level of D input data. Power down protection is provided on inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. It’s available in the commercial and extended temperature range. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. 74V1G77 SINGLE D-TYPE LATCH PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74V1G77STR SOT323-5L 74V1G77CTR SOT323-5L SOT23-5L

(*) Q output is latched at the time when the le input is taken low logic level. ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS 1) VIN from 30% to 70% of VCC PIN N° SYMBOL NAME QND FUNCTION D Data Input LE Latch Enable Input Q Data Output GND Ground (0V) VCC Positive Supply Voltage D LE Q L L No Change * H L No Change * L H Qn H H Qn Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC VCC or Ground Current ± 50 mA Tstg Storage Temperature -65 to +150 TL Lead Temperature (10 sec) 260 Symbol Parameter Value Unit VCC Supply Voltage 2 to 5.5 V VI Input Voltage 0 to 5.5 V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 dt/dv Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V) (VCC = 5.0 ± 0.5V) 0 to 100 0 to 20 ns/V ns/V

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V 3.0 to 5.5 0.7VCC 0.7VCC 0.7VCC VIL Low Level Input Voltage 2.0 0.5 0.5 0.5 V 3.0 to 5.5 0.3VCC 0.3VCC 0.3VCC VOH High Level Output Voltage 2.0 IO=-50 µA 1.9 2.0 1.9 1.9 V 3.0 IO=-50 µA 2.9 3.0 2.9 2.9 4.5 IO=-50 µA 4.4 4.5 4.4 4.4 3.0 IO=-4 mA 2.58 2.48 2.4 4.5 IO=-8 mA 3.94 3.8 3.7 VOL Low Level Output Voltage 2.0 IO=50 µA 0.0 0.1 0.1 0.1 V 3.0 IO=50 µA 0.0 0.1 0.1 0.1 4.5 IO=50 µA 0.0 0.1 0.1 0.1 3.0 IO=4 mA 0.36 0.44 0.55 4.5 IO=8 mA 0.36 0.44 0.55 II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ± 0.1 ± 1 ± 1 µA ICC Quiescent Supply Current 5.5 VI = VCC or GND µA Symbol Parameter Test Condition Value Unit VCC (V) CL (pF) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tPLH tPHL Propagation Delay Time LE to Q 3.3(*) 6.2 9.0 1.0 10.5 1.0 11.5 ns 3.3(*) 6.8 10.0 1.0 11.5 1.0 13.0 5.0() 4.4 6.5 1.0 7.5 1.0 8.5 5.0() 4.8 7.0 1.0 8.0 1.0 9.0 tPLH tPHL Propagation Delay Time D to Q 3.3(*) 7.2 10.0 1.0 11.5 1.0 13.0 ns 3.3(*) 7.9 11.0 1.0 12.5 1.0 14.0 5.0() 4.4 6.5 1.0 7.5 1.0 8.5 5.0() 4.8 7.0 1.0 8.0 1.0 9.0 tW LE Pulse Width, HIGH 3.3(*) 4.0 4.0 4.0 ns 5.0(**) 3.0 3.0 3.0 ts Setup Time D to LE, HIGH or LOW 3.3(*) 3.0 3.0 3.0 ns 5.0(**) 2.0 2.0 2.0 th Hold Time D to LE, HIGH or LOW 3.3(*) 1.0 1.0 1.0 ns 5.0(**) 1.0 1.0 1.0

CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance pF CPD Power Dissipation Capacitance (note 1) pF

WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUN PULSE WIDTH, Dn TO LE SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle) WAVEFORM 2: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)

DIM. mm. mils MIN. TYP MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 0.00 0.10 0.0 3.9 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 1.50 1.75 59.0 68.8 e 0.95 37.4 H 2.60 3.00 102.3 118.1 L 0.10 0.60 3.9 23.6 SOT23-5L MECHANICAL DATA 7049676C

DIM. mm. mils MIN. TYP MAX. MIN. TYP. MAX. A 0.80 1.10 31.5 43.3 0.00 0.10 0.0 3.9 0.80 1.00 31.5 39.4 b 0.15 0.30 5.9 11.8 C 0.10 0.18 3.9 7.1 D 1.80 2.20 70.9 86.6 E 1.80 2.40 70.9 94.5 1.15 1.35 45.3 53.1 e .65 25.6 1.3 51.2 L 0.10 0.30 3.9 11.8 SOT323-5L MECHANICAL DATA

DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 180 7.086 C 12.8 13.0 13.2 0.504 0.512 0.519 D 20.2 0.795 N 2.362 T 14.4 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161 P 3.9 4.0 4.1 0.153 0.157 0.161 Tape & Reel SOT23-xL MECHANICAL DATA

DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 175 180 185 6.889 7.086 7.283 C 12.8 13.2 0.504 0.512 0.519 D 20.2 0.795 N 59.5 60.5 2.362 T 14.4 0.567 Ao 2.25 0.088 Bo 2.7 0.106 Ko 1.2 0.047 Po 3.9 4.1 0.153 0.157 0.161 P 3.8 4.2 0.149 0.157 0.165 Tape & Reel SOT323-xL MECHANICAL DATA

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