74V1G07 STMICROELECTRONICS | Alldatasheet

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SINGLE BUFFER (OPEN DRAIN) PRELIMINARY DATA October 1999 n HIGH SPEED: tPD = 6.1 ns (TYP.) at VCC =5 V n LOW POWER DISSIPATION: ICC =1 µA (MAX.) at TA =2 5oC n HIGH NOISE IMMUNITY: VNIH =V NIL =2 8 %VCC (MIN.) n POWER DOWN PROTECTION ON INPUT n OPERATING VOLTAGE RANGE: V CC (OPR)= 2V to 5.5V n IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V. PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODE: 74V1G07S 74V1G07C S (SOT23-5L) C (SC-70)

Z = High impedance PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1 N.C. Not Connected 2 1A Data Input 4 1Y Data Output

3 GND Ground (0V)

CC Positive Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7.0 V V I DC Input Voltage -0.5 to +7.0 V V O DC Output Voltage -0.5 to V CC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 260 oC AbsoluteMaximum Ratingsarethose values beyond whichdam age to the device may occur. Functional operation un der these condition isnot implied. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2.0 to 5.5 V V I Input Voltage 0 to 5.5 V V O Output Voltage 0 to V CC V Top Operating Temperature -40 to +85 oC dt/dv Input Rise and Fall Time (see note 1) (VCC =3 . 3± 0.3V) (VCC =5 . 0± 0.5V) 0 to 100 0t o2 0 ns/V ns/V 1) VINfrom 30% to70%of VCC 74V1G07

Symbol Parameter Test Conditions Value Unit V CC (V) TA =2 5 o C -40 to 85 o C VIH High Level Input Voltage 2.0 1.5 1.5 V 3.0 to 5.5 0.7V CC 0.7VCC VIL Low Level Input Voltage 2.0 0.5 0.5 V 3.0 to 5.5 0.3V CC 0.3VCC VOL Low Level Output Voltage 2.0 I O =50 µ A 0.0 0.1 0.1 V 3.0 I O =50 µA 0.0 0.1 0.1 4.5 I O =50 µA 0.0 0.1 0.1 3.0 I O =4 mA 0.36 0.44 4.5 I O =8 mA 0.36 0.44 IOZ High Impedance Output Leakage Current 5.5 VI =V IH or VIL VO =V CC or GND ±0.25 ±2.5 µA II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current

5.5 V I =V CC or GND 1 10 µA

CAPACITIVE CHARACTERISTICS Symbol Parameter Test Conditions Value Unit TA =2 5 o C -40 to 85 o C C IN Input Capacitance 4 10 10 pF C PD Power Dissipation Capacitance (note 1) 11 pF 1) CPD isdefined as thevalue of the IC’sinternal equivalent capacitance whichis calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained bythe followingequation. ICC (opr) = CPD • VCC • fIN+ICC AC ELECTRICAL CHARACTERISTICS (Input tr =tf=3 ns) Symbol Parameter Test Condition Value Unit V CC (V) C L (pF) TA =2 5 o C -40 to 85 o C tPLH tPHL Propagation Delay Time (*) Voltag erange is 3.3V± 0.3V (**) Voltagerange is 5V± 0.5V 74V1G07

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL =R 1 =1 KΩ or equivalent RT =Z OUT of pulse generator (typically50Ω ) 74V1G07

DIM. mm mils A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 L 0.35 0.55 13.7 21.6 e 0.95 37.4 e1 1.9 74.8 SOT23-5L MECHANICAL DATA 74V1G07

DIM. mm mils A 0.80 1.10 31.5 43.3 A1 0.00 0.10 0.0 3.9 A2 0.80 1.00 31.5 39.4 b 0.15 0.30 5.9 11.8 C 0.10 0.18 3.9 7.1 D 1.80 2.20 70.9 86.6 E 1.80 2.40 70.9 94.5 E1 1.15 1.35 45.3 53.1 L 0.10 0.30 3.9 11.8 e 0.65 25.6 e1 1.3 51.2 SC-70 MECHANICAL DATA 74V1G07

Information furnished isbelieved to be accurate and reliable. However, STMicroelectroni cs assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. Thispublication supersedes and replaces all informati on previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 74V1G07