DM54S387 NSC | Alldatasheet
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Technical content
i 8 . g GA National
2 Semiconductor
& | DM54/74S387 g . 3 | (256 x 4) 1024-Bit TTL PROM a General Description Features This Schottky memory is organized in the popular 256 ™ Advanced titanium-tungsten (Ti-W) fuses words by 4 bits configuration. Memory enable inputs are ™ Schottky-clamped for high speed provided to control the output states. When the device is Address access—down to 30 ns max enabled, the outputs represent the contents of the selected Enable access—20 ns max word. When disabled, the 4 outputs go to the “OFF” or high Enable recovery—20 ns max impedance state. @ PNP inputs for reduced input loading PROMs are shipped from the factory with lows in all loca- m All DC and AC parameters guaranteed over tempera- tions. A high may be programmed into any selected location ture by following the programming instructions. 1 Low voltage TRI-SAFET™ programming ® Open-coilector outputs: Block Diagram 6 eer agen fa iz u MEMORY MATRIX DECODER ne HE ” 7 wx [ol wx 4 cv] ENABLE Cn CD TU0/9188-1 Pin Names Gi-G2 Output Enables Power Supply 3-22
i=} Connection Diagrams 3 n Dual-In-Line Package Plastic Leaded Chip Carrier (PLCC) 8 Ss ay, gee Be oS ast es gee es = S-2 15fa7 32 1 «2019 > Mos ube Mos 18 & g Bo4 13} Gi B45 Wwe Gi $ ATS 12-00 AE 16-00 A—Té 11 at AL 7 15 NC a7 10-02 ns 4a cnos 9a3 9 10:11:12:13 Tup/etee-2 2g238 Top View TUD/s188-3 Order Number DM54/74S387J, 387AJ, Top View DM74S387N, 387AN Order Number DM74S387V, 387AV See NS Package Number J16A or N16A See NS Package Number V20A
Ordering Information
Commercial Temp Range (0°C to + 70°C) Parameter/Order Number | Max Access Time (na) | OM748987Al [ao 0M748987J [so DM748987N [so DM748987AV a OM748987V a Military Temp Range (—55°C to + 125°C) Parameter/Order Number | Max Access Time (ns) DMS4S987AJ [wo DM545987) [wo 3-23
| Absolute Maximum Ratings (note 1) Operating Conditions | If Milltary/Aerospace specified devices are required, Min Max Units =| please contact the National Semiconductor Sales Supply Voltage (Voc) a Office/Distributors for availability and specifications. Military 4.50 5.50 v 5S | Supply Voltage (Note 2) -0.5V to + 7.0V Commercial 475 5.25 v § | _ Input Voltage (Note 2) —1.2V to +5.5V Anbient Temperature (Ta) 66 125 c = _ ilitary - + ° s Outpt Voltage (Note 2) ad to +5.5V Commercial 0 70 c a Forage baieend ° 4 65°C to re Logical “0” Input Voltage 0 08 v ead Temp. (Soldering, 10 seconds) Logical “1” Input Voltage 2.0 55 v ESD >2000V DM74S387 [ream | cotton a fa a mn Input Load Curent’ | Vog=MaxVw=osev| | -e0| -250] | 0 | -250| ua rm Input Leakage Current | Voo=MaxVw=arv [1 [as |p 128 [pa Vou Low Level Output Voltage | Voc =Minlo.=16mA | | 0.35 | 0.50 | | 035 | o45 | Vv Vix (Note 4) | LowLevelinputvotage | sf] foo ||| oo |v Vin(Note) | Hightevelinputvottage | fo] | feo] Tv loz Output Leakage Current | Voc=Max,Vcex=24v | | | so | | | 50 | pa Cc input Capacitance Voc = 5.0V, Vin = 2.0V 40 ' Ta = 25°C, 1 MHz " p Co Output Capacitance Voc = 5.0V, Vo = 2.0V 7 Tp = 25°C, 1 MHz, Outputs Off i loc Power Supply Current Voc = Max, Inputs Grounded mA All Outputs Open Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at these values. Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions. Note 3: These limits apply over the entire operating range unless stated otherwise. Alll typical values are for Voc = 5.0V and T, = +25°C. Note 4: These are absolute voltages with respect to pin 8 on the device and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. 3-24
i=] COMMERCIAL TEMP RANGE (0°C to +70°C) g ao Symbol JEDEC Symbol DM748387 DM74S387A units | 5 | win | typ | max | min | typ | Max | 2 TAA | AdaressAccesstine | tavov | {| a5 [| so [| 20 | ao | me | 8 12x __| Output Enable Time tevox [fs | a5 [is [20 | ns 1x2 __| Output Disable Time vexoz | ts | as [Ts [0 [ns MILITARY TEMP RANGE (—55°C to + 125°C) symbol Parameter JEDEC Symbol DM548387 DM54S367A Units [min | tye | Max | min [typ | max | T2x__| Output Enable Time tevox | [ts | 9 | fs [a0 Tne TX2__| Output Disable Time vexoz [Ts [eo Ts [oo [ns Functional Description TESTABILITY TITANIUM-TUNGSTEN FUSES The Schottky PROM die includes extra rows and columns of National's Programmable Read-Only Memories (PROMs) fusable links for testing the programmability of each chip. feature titanium-tungsten (Ti-W) fuse links designed to pro- These test fuses are placed at the worst-case chip locations —_ gram efficiently with only 10.5V applied. The high perform- to provide the highest possible confidence in the program- —_ance and reliability of these PROMs are the result of fabrica- ming tests in the final product. A ROM pattern is also per- tion by a Schottky bipolar process, of which the titanium- manently fixed in the additional circuitry and coded to pro- tungsten metallization is an integral part, and the use of an ig vide a parity check of input address levels. These and other —_ on-chip programming circuit. test circuits are used to test for correct operation of the row 4 major advantage of the titanium-tungsten fuse technology and column-select circuits and functionality of input and en- is the low programming voltage of the fuse links, At 10.5V, able gates. All test circuits are available at both wafer and this virtually eliminates the need for guard-ring devices and assembled device levels to allow 100% functional and para- wide spacings required for other fuse technologies. Care is metric testing at every stage of the test flow. taken, however, to minimize voltage drops across the die RELIABILITY and to reduce parasitics. The device is “ined to ensure As with all National products, the Ti-W PROMS are subject- ‘Nat worst-case fuse operating current is low enough for anemia eS reliable long-term operation. The Darlington programming ed fo an on-going reliability evaluation by the Reliability As-_c-cvit ig liberally designed to insure adequate power density surance Department. These evaluations employ accelerat- for blowing the f links. The let it design i ed life tests, including dynamic high-temperature operating {0% Plowing the fuse links. The complete circuit design is " 3 optimized to provide high performance over the entire oper- life, temperature-humicity life, temperature cycling, and ther- tan ey © 2 pm mal shock. To date, nearly 7.4 million Schottky Ti-W PROM 9 rang ec p : device hours have been logged, with samples in Epoxy B molded DIP (N-package), PLCC (V-package) and CERDIP (J-package). Device performance in all package configura- tions is excellent. 3-25