DM54S287 NSC | Alldatasheet

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£| 27] National z Semiconductor F DM54/74S287 & | (256 x 4) 1024-Bit TTL PROM a General Description Features This Schottky memory is organized in the popular 256 ™ Advanced titanium-tungsten (Ti-W) fuses words by 4 bits configuration. Memory enable inputs are ™ Schottky-clamped for high speed Provided to contro! the output states. When the device is Address access—down to 30 ns max enabled, the outputs represent the contents of the selected Enable access—20 ns max word. When disabled, the 4 outputs go to the “OFF” or high Enable recovery—20 ns max impedance state. @ PNP inputs for reduced input loading PROMs are shipped from the factory with lows in all loca- | ™ All DC and AC parameters guaranteed over tions. A high may be programmed into any selected location temperature by following the programming instructions. © Low voltage TRI-SAFET™ programming ™ >2000V input protection for electrostatic discharge @ TRI-STATE® outputs Block Diagram Lu AG 1024-BIT ARRAY Pin Names s—4 J 32 x 32 un ® MeNORY ATR

8 Output Enables

mer Trig, [ano | Ground n |_co-as | outputs | Al _ a a vd ENABLE GATE a3 a2 a1 ao TL/D/8359-1 3-18

i=] Connection Diagrams 3 Dua-in-Line-Package Plastic Leaded Chip Carrier (PLCC) 8 a wl 8 vee e228 3 2] 15 Lo Ly = “ 3 14 B 3.2 1 2019 _ 3 a 4 13 a Mos 18 2 a we I og ass Wea 8 at Hat AOE 16-00 N wl 0 a2 a7 15tNc en = P03 ne 14a TL/D/8359-2 $10 11 1243 Top Vie even 2eg2es8 Order Number DM54/74S2874, 287AJ, DM74S287N or 287AN TU/0/6969-7 See NS Package Number J16A or N16A. Top View Order Number DM74S287V or 287AV See NS Package Number V20A

Ordering Information

Commercial Temp Range (0°C to + 70°C) Parameter/Order Number | Max Access Time (ns) [omaszeras | wo [owzasaery ST Cid DM74S287AN a . [owzasam i C= DMT@S287AV a OM74S267V a Military Temp Range (— 55°C to + 125°C) Parameter/Order Number |_Max Access Time (ns) | OMS4S267A) [wo [owssseen SSC 3-19

n o ® | Absolute Maximum Ratings (note 1) Operating Conditions | If Military/Aerospace specified devices are required, Min Max Units = please contact the National Semiconductor Sales Supply Voltage (Vcc) a Office/Distributors for availability and specifications. Military 4.50 5.50 Vv 55 | Supply Voltage (Note 2) —0.5to +7.0V Commercial 475 5.25 v § | input voltage (Note 2) —1.2V to +5.5V Ambient Temperature (Ta) 55 4105 c = _ ilitary - “ Ps ot votage weote 2) 5 oy es oe Commercial 0 70 C Fay roe eee ure 10 4 to score Logical “0” Input Voltage 0 08 v €ad Temp. (Soldering, 10 seconds) Logical “1” Input Voltage 2.0 55 v ESD >2000V DM74S287 symbol |__omsasze7 | Units [| reemte | contre pe ae fm [a n InputtoadGurent_ | Voo=Maxvw=04sv || 20 | -250| | -a0 | ~250| ua rm InputLeskage Curent [Voo=Maxv=27v | | [a6 | [| as | pa Voo=Maxvn=ssv | | | xo | [| 40 | ma Yo. Low Level Output Votage | Voo=Min,iq.=16ma || 00s | 050 | | ons | ons |v Vieinote 4) | Lowtevelinputvorage | | Tf oo | || oo |v VniNote 4) | High Levelinputvotage | zo || feo | |v Vo InputCiamp Votage | Voo=Mintw=—t8ma_ || -o8| -12| | -o| -12 |v C Input Capacitance Voc=5.0V, Vin=2.0V 40 7 Ta= 25°C, 1 MHz " e Co Output Capacitance Voo=5.0V, Vo=2.0V F Ta= 25°C, 1 MHz, Outputs Off i loc Power Supply Current Voc = Max, inputs Grounded 190 | ma All Outputs Open los Short Circuit Vo=0V, Voc=Max - -70 | mA Output Current (Note 5) 70 a loz Output Leakage Voo=Maxvo=o4sveezav| | | +50 [| | +50 | ua lon= —6.5 mA | {| | [esfse{ Jv Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at these values. Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions. Note 3: These limits apply over the entire operating range unless stated otherwise. All typical values are for Voc = 5.0V and Ta = +25°C. Note 4: These are absolute voltages with respect to pin 8 on the device and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. Note 5: During los measurement, only one output at a time should be grounded. Permanent damage may otherwise result. 3-20

COMMERCIAL TEMP RANGE (0°C to + 70°C) fa o symbol | JEDEC Symbol DM74S287 DM74S287A units |= imi nits | win | typ [mex | min | typ | Max | 2 Tax Tevox | Outputenabletime | | 15 | 26 | [as [20 [ns re Texaz | ouputoisabieTime [| is | 25 [ [1s [20 [ns MILITARY TEMP RANGE (—55°C to + 125°C) symbot | JEDEC Symbol |___omsesze7_— | omseszeva | {min | tye [ max | min [tye | tax | TER Texax | EnableRecovey Time | | ts [| a0 | [is [90 | ns Functional Description TESTABILITY TITANIUM-TUNGSTEN FUSES The Schottky PROM die includes extra rows and columns of National's Programmable Read-Only Memories (PROMs) fusable links for testing the programmability of each chip. _ feature titanium-tungsten (Ti-W) fuse links designed to pro- These test fuses are placed at the worst-case chip locations —_gram efficiently with only 10.5V applied. The high perform- to provide the highest possible confidence in the program- —_ance and reliability of these PROMs are the result of fabrica- ming tests in the final product. A ROM pattern is also per- tion by a Schottky bipolar process, of which the titanium- manently fixed in the additional circuitry and coded to pro- _ tungsten metallization is an integral part, and the use of an vide a parity check of input address levels. These and other —_ on-chip programming circuit. test circuits are used to test for correct operation of the row 4 major advantage of the titanium-tungsten fuse technology and column-select circuits and functionality of input and en- is the low programming voltage of the fuse links. At 10.5V, able gates. All test circuits are available at both wafer and this virtually eliminates the need for guard-ing devices and assembled device levels to allow 100% functional and para- wide spacings required for other fuse technologies. Care is metric testing at every stage of the test flow. taken, however, to minimize voltage drops across the die RELIABILITY and to reduce parasitics. The device is cesigned to ensure As with all National products, the T-W PROMS are subject. ‘Nat worst-case fuse operating current is low enough for a a i oabil reliable long-term operation. The Darlington programming ed to an on-going reliability evaluation by the Reliability As- Gens i * 7

4 Circuit is liberally designed to insure adequate power density

surance Department. These evaluations employ accelerat- ty blowing the fuse links. The complete circuit design is ed life tests, including dynamic high-temperature operating malty ide hich cy on : optimized to provide high performance over the entire oper- life, temperature-humidity life, temperature cycling, and ther- ating ranges of Voc and temperature. mal shock. To date, nearly 7.4 million Schottky Ti-W PROM 9 cc - device hours have been logged, with samples in Epoxy B molded DIP (N-package), PLCC (V-package) and CERDIP (J-package). Device performance in all package configura- tions is excellent. 3-21