74LCX08FT TOSHIBA | Alldatasheet

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CMOS Digital Integrated Circuits Silicon Monolithic 74LCX08FT74LCX08FT74LCX08FT74LCX08FT Start of commercial production 2014-06 1. 1. 1. 1. Functional DescriptionFunctional DescriptionFunctional DescriptionFunctional Description

  • Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs 2. 2. 2. 2. GeneralGeneralGeneralGeneral The 74LCX08FT is a high-performance CMOS 2-input AND. Designed for use in 3.3 V systems, it achieves high- speed operation while maintaining the CMOS low power dissipation. The device is designed for low-voltage (3.3 V) V CC applications, but it could be used to interface to 5 V supply environment for inputs. All inputs are equipped with protection circuits against static discharge. 3. 3. 3. 3. FeaturesFeaturesFeaturesFeatures (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125  (3) Low-voltage operation: VCC = 1.65 to 3.6 V (4) High-speed operation: tpd = 6.5 ns (max) (VCC = 3.3 ± 0.3 V) (5) Output current: |IOH|/IOL = 24 mA (min) (VCC = 3.0 V) (6) Power-down protection provided on all inputs and outputs (7) Pin and function compatible with the 74 series (74LVC/ALVC etc.) 08 type Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. 4. 4. 4. 4. PackagingPackagingPackagingPackaging TSSOP14B 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation
  1. 5. 5. 5. Pin AssignmentPin AssignmentPin AssignmentPin Assignment 6. 6. 6. 6. MarkingMarkingMarkingMarking 7. 7. 7. 7. IEC Logic SymbolIEC Logic SymbolIEC Logic SymbolIEC Logic Symbol 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation
  1. 8. 8. 8. Truth TableTruth TableTruth TableTruth Table Inputs A L L H H Inputs B L H L H Outputs Y L L L H 9. 9. 9. 9. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) Characteristics Supply voltage Input voltage Output voltage Input diode current Output diode current Output current Power dissipation VCC/ground current Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT PD ICC/IGND Tstg Note (Note 1) (Note 2) (Note 3) (Note 4) Rating -0.5 to 6.5 -0.5 to 6.5 -0.5 to 6.5 -0.5 to VCC + 0.5 -50 ±50 ±50 180 ±100 -65 to 150 Unit V V V mA mA mA mW mA Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High or low state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND, VOUT > VCC Note 4: 180 mW in the range of T a = -40 to 85  . From Ta = 85 to 125  a derating factor of -3.25 mW/  shall be applied until 50 mW. 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation
  1. 10. 10. 10. Operating Ranges (Note)Operating Ranges (Note)Operating Ranges (Note)Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Output current Operating temperature Input rise and fall times Symbol VCC VIN VOUT IOH,IOL Topr dt/dv Note (Note 1) (Note 2) (Note 3) (Note 4) (Note 5) (Note 6) Rating 1.65 to 3.6 1.5 to 3.6 0 to 5.5 0 to 5.5 0 to VCC ±24 ±12 -40 to 125 0 to 10 Unit V V V mA ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Data retention only Note 2: VCC = 0 V Note 3: High or low state Note 4: VCC = 3.0 to 3.6 V Note 5: VCC = 2.7 to 3.0 V Note 6: VIN = 0.8 to 2.0 V, VCC = 3.0 V 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation
  1. 11. 11. 11. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Power-OFF leakage current Quiescent supply current Quiescent supply current Symbol VIH VIL VOH VOL IIN IOFF ICC ∆ICC Test Condition VIN = VIH VIN = VIH or VIL VIN = 0 to 5.5 V VIN/VOUT = 5.5 V VIN = VCC or GND VIN = 3.6 to 5.5 V VIH = VCC - 0.6 V (per 1 input) IOH = -100 µA IOH = -4 mA IOH = -8 mA IOH = -12 mA IOH = -18 mA IOH = -24 mA IOL = 100 µA IOL = 4 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA VCC (V) 1.65 to 2.3 2.3 to 2.7 2.7 to 3.6 1.65 to 2.3 2.3 to 2.7 2.7 to 3.6 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 1.65 to 3.6 1.65 to 3.6 1.65 to 3.6 2.7 to 3.6 Min VCC × 0.9 1.7 2.0 VCC - 0.2 1.05 1.7 2.2 2.4 2.2 Max VCC × 0.1 0.7 0.8 0.2 0.45 0.7 0.4 0.4 0.55 ±5.0 10.0 10.0 ±10.0 500 Unit V V V V µA µA µA µA 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation

∆ICC Test Condition VIN = VIH VIN = VIH or VIL VIN = 0 to 5.5 V VIN/VOUT = 5.5 V VIN = VCC or GND VIN = 3.6 to 5.5 V VIH = VCC - 0.6 V (per 1 input) IOH = -100 µA IOH = -4 mA IOH = -8 mA IOH = -12 mA IOH = -18 mA IOH = -24 mA IOL = 100 µA IOL = 4 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA VCC (V) 1.65 to 2.3 2.3 to 2.7 2.7 to 3.6 1.65 to 2.3 2.3 to 2.7 2.7 to 3.6 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 1.65 to 3.6 1.65 to 3.6 1.65 to 3.6 2.7 to 3.6 Min VCC × 0.9 1.7 2.0 VCC - 0.2 0.9 1.55 2.0 2.2 2.0 Max VCC × 0.1 0.7 0.8 0.2 0.65 0.9 0.6 0.6 0.75 ±20.0 40.0 40.0 ±40.0 5.0 Unit V V V V µA µA µA mA Characteristics Propagation delay time Output skew Symbol tPLH,tPHL tosLH,tosHL Note (Note 1) Test Condition See 11.7 AC Test Circuit, VCC (V) 1.8 ± 0.15 2.5 ± 0.2 2.7 3.3 ± 0.3 2.7 3.3 ± 0.3 Min 1.5 1.5 Max 20.0 7.2 6.2 5.5 1.0 Unit ns ns Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) Characteristics Propagation delay time Output skew Symbol tPLH,tPHL tosLH,tosHL Note (Note 1) Test Condition See 11.7 AC Test Circuit, VCC (V) 1.8 ± 0.15 2.5 ± 0.2 2.7 3.3 ± 0.3 2.7 3.3 ± 0.3 Min 1.5 1.5 Max 22.0 8.0 7.0 6.5 1.0 Unit ns ns Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation

(Unless otherwise specified,T(Unless otherwise specified,T(Unless otherwise specified,T(Unless otherwise specified,Taaaa = 25 = 25 = 25 = 25  , Input: t, Input: t, Input: t, Input: trrrr = t = t = t = tffff = 2.5 ns, C = 2.5 ns, C = 2.5 ns, C = 2.5 ns, CLLLL = 50 pF, R = 50 pF, R = 50 pF, R = 50 pF, RLLLL = 500 = 500 = 500 = 500 ΩΩΩΩ)))) Characteristics Quiet output maximum dynamic VOL Quiet output minimum dynamic VOL Symbol VOLP |VOLV| Test Condition VIH = 3.3 V,VIL = 0 V VIH = 3.3 V,VIL = 0 V VCC (V) 3.3 3.3 Typ. 0.8 0.8 Unit V V Characteristics Input capacitance Output capacitance Power dissipation capacitance Symbol CIN COUT CPD Note (Note 1) Test Condition fIN =10 MHz VCC (V) 3.3 3.3 Typ. Unit pF pF pF Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/4 (per 1 gate) Input Output Load Symbol VIH VIM tr, tf VOM CL RL VCC = 3.3 ± 0.3 V VCC = 2.7 V 2.7 V 1.5 V 2.5 ns 1.5 V 50 pF 500 Ω VCC = 2.5 ± 0.2 V VCC VCC/2 2.0 ns VOH/2 30 pF 500 Ω VCC = 1.8 ± 0.15 V VCC VCC/2 2.0 ns VOH/2 30 pF 1 kΩ 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation

Package DimensionsPackage DimensionsPackage DimensionsPackage Dimensions Unit: mm Weight: 0.054 g (typ.) Package Name(s) Nickname: TSSOP14B 2016-09-13 Rev.4.0 ©2016 Toshiba Corporation

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