74LCX04M

74LCX04MTR STMICROELECTRONICS | Alldatasheet

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Technical content

■ 5V TOLERANT INPUTS ■ HIGH SPEED : tPD = 5.2ns (MAX.) at VCC = 3V ■ POWER DOWN PROTECTION ON INPUTS AND OUTPUTS ■ SYMMETRICAL OUTPUT IMPEDANCE: OH | = IOL = 24mA (MIN) at VCC = 3V ■ PCI BUS LEVELS GUARANTEED AT 24 mA ■ BALANCED PROPAGATION DELAYS: t PLH ≅ tPHL ■ OPERATING VOLTAGE RANGE: V CC (OPR) = 2.0V to 3.6V (1.5V Data Retention) ■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 04

■ LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ■ ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V

DESCRIPTION

The 74LCX04 is a low voltage CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology. It is ideal for low power and high speed 3.3V applications. It can be interfaced to 5V signal environment for inputs. It has same speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. 74LCX04 LOW VOLTAGE CMOS HEX INVERTER WITH 5V TOLERANT INPUTS PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE TUBE T & R SOP 74LCX04M 74LCX04MTR TSSOP 74LCX04TTR TSSOPSOP

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION TRUTH TABLE ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND PIN No SYMBOL NAME AND FUNCTION 1,3,5,9,11,13 1A to 6A Data Inputs 2, 4, 6, 8, 10, 12 1Y to 6Y Data Outputs

7 GND Ground (0V)

14 V CC Positive Supply Voltage

Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (VCC = 0V) -0.5 to +7.0 V VO DC Output Voltage (High or Low State) (note 1) -0.5 to V CC + 0.5 V IIK DC Input Diode Current - 50 mA IOK DC Output Diode Current (note 2) - 50 mA IO DC Output Current ± 50 mA ICC DC Supply Current per Supply Pin ± 100 mA IGND DC Ground Current per Supply Pin ± 100 mA Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 300 °C

RECOMMENDED OPERATING CONDITIONS 1) Truth Table guaranteed: 1.5V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATIONS DYNAMIC SWITCHING CHARACTERISTICS 1) Number of outputs defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining output is measured in the LOW state. Symbol Parameter Value Unit VCC Supply Voltage (note 1) 2.0 to 3.6 V VI Input Voltage 0 to 5.5 V VO Output Voltage (VCC = 0V) 0 to 5.5 V VO Output Voltage (High or Low State) 0 to V CC V IOH , IOL High or Low Level Output Current (VCC = 3.0 to 3.6V) ± 24 mA IOH , IOL High or Low Level Output Current (VCC = 2.7V) ± 12 mA Top Operating Temperature -55 to 125 °C dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V Symbol Parameter Test Condition Value UnitVCC (V) -40 to 85 °C -55 to 125 °C Min. Max. Min. Max. VIH High Level Input Voltage 2.7 to 3.6 2.0 2.0 V V IL Low Level Input Voltage 0.8 0.8 V VOH High Level Output Voltage 2.7 to 3.6 IO =-100 µAV CC -0.2 V CC -0.2 V 2.7 IO =-12 mA 2.2 2.2 3.0 IO =-18 mA 2.4 2.4 IO =-24 mA 2.2 2.2 VOL Low Level Output Voltage 2.7 to 3.6 IO =100 µA 0.2 0.2 V 2.7 IO =12 mA 0.4 0.4 3.0 IO =16 mA 0.4 0.4 IO =24 mA 0.55 0.55 II Input Leakage Current 2.7 to 3.6 VI = 0 to 5.5V ± 5 ± 5 µA Ioff Power Off Leakage Current 0 VI or VO = 5.5V 10 10 µA ICC Quiescent Supply Current 2.7 to 3.6 VI = VCC or GND 10 10 µAVI or VO = 3.6 to 5.5V ± 10 ± 10 ΔICC ICC incr. per Input2.7 to 3.6 VIH = VCC - 0.6V 500 500 µA Symbol Parameter Test Condition Value UnitVCC (V) TA = 25 °C Min. Typ. Max. VOLP Dynamic Low Level Quiet Output (note 1) 3.3 C L = 50pF VIL = 0V, VIH = 3.3V 0.8 VVOLV -0.8

AC ELECTRICAL CHARACTERISTICS 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch- ing in the same direction, either HIGH or LOW (tOSLH = | tPLHm - tPLHn |, tOSHL = | tPHLm - tPHLn |) 2) Parameter guaranteed by design CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC /6 (per gate) TEST CIRCUIT C L = 50 pF or equivalent (includes jig and probe capacitance) R L = 500Ω or equivalent R T = ZOUT of pulse generator (typically 50Ω ) Symbol Parameter Test Condition Value UnitVCC (V) C L (pF) R L (Ω ) ts = tr (ns) -40 to 85 °C -55 to 125 °C Min. Max. Min. Max. tPLH tPHL Propagation Delay Time tOSLH tOSHL Output To Output Skew Time (note1, Symbol Parameter Test Condition Value UnitVCC (V) TA = 25 °C Min. Typ. Max. C IN Input Capacitance 3.3 VIN = 0 to VCC 5p F C PD Power Dissipation Capacitance (note 1) 3.3 f IN = 10MHz VIN = 0 or VCC 41 pF

WAVEFORM : PROPAGATION DELAY (f=1MHz; 50% duty cycle)

DIM. mm. inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° ( m a x . ) SO-14 MECHANICAL DATA PO13G

DIM. mm. inch A 1.2 0.047 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 e 0.65 BSC 0.0256 BSC K0 ° 8 °0 ° 8 ° TSSOP14 MECHANICAL DATA c Eb A2A D PIN 1 IDENTIFICATION LKe 0080337D

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