54F779 NSC | Alldatasheet
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a . PS National Nevers seo | : ~ Semiconductor nN by N 54F/74F779 2 8-Bit Bidirectional Binary Counter © . n with TRI-STATE® Outputs oO General Description Features oO The 'F779 is a fully synchronous 8-stage up/down counter ™@ Multiplexed TRI-STATE 1/0 Ports Q with multiplexed TRI-STATE I/O ports for bus-oriented ap- — @ Built-in lookahead carry capability nd plications. All control functions (hold, count up, count down, m Count frequency 100 MHz typ 3 synchronous load) are controlled by two mode pins (Sp, $1). ‘Supply current 80 mA typ ~ The device also features carry lookahead for easy cascad- ™ Guaranteed 4000V minimum ESD protection o ing. All state changes are initiated by the rising edge of the & Available in SOIC (300 mil only) 5 clock. ivy ooo Fe Logic Symbols Connection Diagram < Pin Assignment [?) for DIP, SOIC and Flatpak ° So Sy c ay, 3 OFCET Vo, 1 16 1/0 Oo cp clo 0,42 15 For ad Olor 03-43 14-—CET = GND 4 13} V, = YO 0; 0, 0s 04/0 V0 V0, vo,4s abe > . 4 'os—46 11} So TUF 9503-1 vo; robs Fs) /o,—48 oF OE o TL/F/9593-2 > m me] a FASTS and TRLSTATE® ao ragistored taderarks of National Semiconductor Corporaon, | ©1680 Nationa ‘Semiconductor Corporation TL/F/9593 ’ RRO-B20M110/Prited in U.S. A.
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Description UL. Input h/t HIGH/LOW Output low/lo. VOo-1/07 | Data Inputs 0.25/0.33 5 pA/—0.2 mA Data Outputs 75/15 (12.5) | —3 mA/24 mA (20 mA) So. $1 Select Inputs 0.25/0.33 5 pA/—0.2 mA OE Output Enable Input (Active LOW) 0.25/0.33 5 wA/—0.2 mA CET Count Enable Trickle Input (Active LOW) | 0.25/0.33 5 pA/—0.2 mA cP Clock Pulse Input (Active Rising Edge) 0.25/0.33 5 pA/—0.2 mA Te Terminal Count Output (Active LOW) 25/12.5 —1mA/20 mA Function Table $1 S tet OE cp [Function x x x H =X | 1/Op to 1/07 in High Z x xX xX L X | Flip-Flop Outputs Appear on 1/O Lines LoL xX X 7 | Parallel Load All Flip-Flops (NotLL) =H X 7 | Hold (TC Held HIGH) H HX xX 7 | Hold HOLL L X 7 | Count Up L H L x ~__| Count Down H = HIGH Voltage Level L = LOW Voltage Level X = Immaterial ~~ = LOW-to-HIGH Clock Transition (Not LL) means Sp and S; should never both be LOW level at the same time.
i Hy Voltage Applied to Output Absolute Maximum Ratings (note 1) in HIGH State (with Vog = OV) If Military/Aerospace specified devices are required, Standard Output —0.5V to Voc please contact the National Semiconductor Sales TRI-STATE Output -0.5V to + 5.5V Office/Distributors for availability and specifications, Current Applied to Output Storage Temperature -65°C to + 150°C in LOW State (Max) twice the rated Io. (mA) Ambient Temperature under Bias —55°C to + 125°C ESD Last Passing Voltage (Min) 4000V Junction Temperature under Bias —55°C to + 175°C Voc Pin Potential to Recommended Operating Ground Pin -0.5V to +7.0V Conditions Input Voltage (Note 2) -0.5V to +7.0V Free Air Ambient Temperature Input Current (Note 2) —30 mA to +5.0 mA Military —55°C to + 125°C Note 1: Absolute maximum ratings are values beyond which the device may Commercial OC to +70°C be damaged or have its useful life impaired. Functional operation under these conditions is not implied. att areal +4.5V to +5.5V Note 2: Either voltage limit or current limit is sufficient to protect inputs. Commercial + 4 5V to + 5. 5V Symbol S4F/74F Conditions Vin Input HIGH Voltage [20 «| =v |__| Recognized as a HIGH Signal Vie Input LOW Voltage | ioe | vv | [| Recognized as a LOW Signal Veo InputCiamp Diode Votage | 82 |v | Min | I = 18m Vou Output HIGH Mil 24 lon = —3mA Voltage 10% Vcc | 2.4 v 5% Voc | 27 Vou Output LOW Mil 05 lot = 24mA Voltage 10% Voc 05 v lo, = 20 mA 5% Voc 05 lo = 20 mA hia Input HIGH 54F _ VOPR; Cent 7aF pA Vin = 2.7V (Non-I/0 Pins) levi Input HIGH Current 54F 100 _ . Breakdown Test 74F 7.0 HA Vin = 7.0V (Non-I/0 Pins) Ipvit Input HIGH Current = 54F 1.0 - Breakdown (I/O) 74F 05 Vin = 5.8V (V/On) Ioex Output HIGH 54F 250 . Leakage Current 74F 50 HA Vout = Voc Vio Input Leakage hip = 1.9 pA Test 74F 4.75 v All other pins grounded lop Output Leakage Viop = 150 mV Circuit Current rar 3.75 | HA All other pins grounded lz Bus Drainage Test [500 |_| 0.0 | Vour = 528v im Input LOW Current [02 | ma _| Max | Vin = 0.5V(Non1/0 Pins) ti + loz | Output Leakage Current [| pd _| Max | Vour = 2.7 W/0n) w+ loze_| Output Leakage Current [ 200 | pA | Max | Vour = 0.5V(\\/0n) los Output Short-Circuit Current 60 =150 | mA _| Max | Vour = ov loow Power Supply Current Po ma | Max | Vo = HIGH toot Power Supply Current po t05 | ma_| Max | Vo = Low looz Power Supply Gurrent [sto Ym] ax | Vo = Hichz
a Ta = +25°C . _ Symbol Parameter Voc = +5.0V ™ vec." ui Ta Voc 50 co ™ | units CL = 50 pF L Pl L pl Min Typ Max | min Max | Min Max _| fax | MaximumGlock Frequency | 100 105 a teLH Propagation Delay 3.0 5.0 8.0 3.0 85 ns tpHL CP to 1/On 5.0 75 11.0 5.0 11.0 tpLH Propagation Delay 5.0 75 9.0 5.0 10.0 ns teLH Propagation Delay 25 3.8 55 25 6.0 ns tpHL TET to TT 45 6.1 8.0 45 85 teLH Propagation Delay 35 65 12.0 3.5 12.0 ns teHL. SNto TC 35 75 12.0 3.5 12.0 tpzH Output Enable Time 3.0 5.0 7.0 3.0 75 ns tpuz Output Disable Time 1.0 4.0 65 1.0 7.0 ns teLz OE to 1/0, 1.0 37 6.5 1.0 7.0 AC Operating Requirements Ta = +25°C = Symbol Parameter Veco = +5.0V | tevee=mt | avec com _| units te(H) Setup Time ns ts(L) 1/On to CP th(H) Hold Time 0.0 0.0 ns tht) 1/0, to CP 0.0 0.0 te(H) Setup Time 10.0 ns te(L) Sn to CP 10.0 s th(H) Hold Time 0.0 0.0 ns til) Sn to CP 0.0 0.0 t(H) Setup Time 7.0 7.0 ns ts(L) TET to CP 7.0 7.0 th(H) Hold Time 0.0 0.0 ns th) TET to CP 0.0 0.0 tw(H) Clock Pulse Width 4.0 4.0 hn te(L) High or Low 4.0 4.0 s
Ordering Information
The device number is used to form part of a simplified purchasing code where a package type and temperature range are defined as follows: 74F 779 P GC QR Temperature Range Family J tL Special Variations 74F = Commercial X = Devices shipped in 13" reels. 54F = Military QR = Commercial grade device with burn-in Device Type QB = Military grade device with Package Code environmental and burn-in P = Plastic DIP processing shipped in tubes SP = Slim Plastic DIP Temperature Range D = Ceramic DIP C = Commercial (—0°C to +70°C) SD = Slim Ceramic DIP M = Military (—55°C to + 125°C) F = Flatpak L = Leadless Chip Carrier (LCC) Q = Plastic Leaded Chip Carrier (PCC) S = Smail Outline (SOIC)
Physical Dimensions inches (mitimeters) _oase-o0rs ts rote | _ wosua en wo ae (10.01 — 10.64) wpe. 2) wo “4 203 4 5 6 3 8 hea ua ozs1-0208 etary TA toe teu ——eees To Zz { some + VF FIPIPIRIPI 4 (0.102) e061 270) 370) ess -0308) au aD tos eats Le “wr ie 7m uaseve 16-Lead (0.300” Wide) Small Outline Integrated Circuit (S)
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2 Physical Dimensions inches (mitiimeters) (Continued)
s 0.740 0.780 0.090 fe 5] (4) (3) 72) fi) rol, [oI wi TE ELE EE EEL INDEX ff ij AREA ee Cf o2sezoor x 1) 5 (635020.254) e pw no. 1 es ee ee Te ” went UW TT TST Tal TST TT TT IDENT a OPTION 01 OPTION 02 0.065 Ee (3.30220.127) (saa) YP a\\ r OPTIONAL | (7.620-8.128) fe t l 0.145 = 0.200 ES 95k5° 0.008-0.016 90° 4° TYP Gouscoae 5 os08) wl i | fr 0.280 “7 (0208-0406) P4 0.125 = 0.150 | o0sozo.1s 7.112) Cc (3.175 = 3.810) too (0.762 0.381) MIN 3 (0356-0584) 0.050 soos’! be (2540#0.254) (0.525 -9'015 wise (VF) oO nP (27080254) nm (g.255¢},016) 2 16-Lead Plastic Dual-in-Line Package (P) [oe] iv] Ee] o [s) a a nN nN u wv RK ue LIFE SUPPORT POLICY wo NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or ' with instructions for use provided in the labeling, can effectiveness. . be reasonably expected to result in a significant injury Lt to the user. eee ene YF) National Semiconductor ‘National Semiconductor National Semiconductor National Semiconductor ational Semicondutores National Semiconductor Corporation ‘GmbH Japan Lid. Hong Kong Ltd. Do Braail Lida. (Australa) PTY, Lis. P.O. Box $8080 10.8000 Fursteneldbruck 4-15 Nish Shinju Chinachom Golden Paza, 6.0 Ancor Con, 62 Melbourne, 3004 Santa Cara, CA 95052-8000 West Gorman, Shinuke-Ku, 77 Mody load, Tamshatsui East, 01451 Sao Paulo, SP, Bras Victory, Australia Tot (408) 721-5000 Tot (0-81-41) 103.0 Tokyo 160, Japan Kowloon, Hong Kong Tob (55/11) 242-6066, Tek: (08) 267-5000 TWX: (910) 399-8240 Telos: 527-649 To 3-208-7001 ob 37291290 Fax: (65/11) 211-1181 NSBR BR Fax: 61-3-2677458 Fax (08141) 109554 FAX 3.290.700 “olex: 52096 NSSEA HX Fax, 39112596 National doesnot assume any responsibly for use of any Grcuity desorbed, no cult patent icenses are inp and Nato resorves the ight a any te without nooo to change said ort and specications